JPS54116188A - Solidstate pick up device - Google Patents
Solidstate pick up deviceInfo
- Publication number
- JPS54116188A JPS54116188A JP2198678A JP2198678A JPS54116188A JP S54116188 A JPS54116188 A JP S54116188A JP 2198678 A JP2198678 A JP 2198678A JP 2198678 A JP2198678 A JP 2198678A JP S54116188 A JPS54116188 A JP S54116188A
- Authority
- JP
- Japan
- Prior art keywords
- light
- wave length
- film
- visual
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000007 visual effect Effects 0.000 abstract 4
- 230000035945 sensitivity Effects 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000001228 spectrum Methods 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 108010025899 gelatin film Proteins 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE:To obtain the spectrum sensitivity having good SN ratio, by providing the fluorescent film which absorbs the short wave length of ultraviolet and visual light and coverts the light excited at one wave region at least among them into the visual length by wave length on the electrode placed on the solidstate pick up element. CONSTITUTION:The SiO2 film 12 is coated on the P type Si substrate 11, the stripe shaped electrodes 13-1 to 13-3 for three phase drive are arranged on it, common connection is made at every third electrode, the respective electrode is connected to the voltage applying terminals 15-1 to 15-3, causing the potential well 16 and being the solidstate pick up element. Further, on the incident light side of the electrodes 13-1 to 13-3, the conversion body such as fluorescent film 14 absorbing the ultraviolet and visual light short wave length side and converting the light excited with one wave length into the visual light is formed. As the film 14, gelatin film mixing fluorescent powder such as YAG is used and it is formed with coating and sintering. Thus, when short wave length light with bad sensitivity is incident, this is changed into longer wave length light, improving the spectrum sensitivity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2198678A JPS54116188A (en) | 1978-03-01 | 1978-03-01 | Solidstate pick up device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2198678A JPS54116188A (en) | 1978-03-01 | 1978-03-01 | Solidstate pick up device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54116188A true JPS54116188A (en) | 1979-09-10 |
Family
ID=12070339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2198678A Pending JPS54116188A (en) | 1978-03-01 | 1978-03-01 | Solidstate pick up device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54116188A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58182267A (en) * | 1982-04-16 | 1983-10-25 | Matsushita Electric Ind Co Ltd | Solid-state image pickup device |
| JP2018019068A (en) * | 2016-07-15 | 2018-02-01 | キヤノン株式会社 | Photoelectric conversion device and imaging system |
-
1978
- 1978-03-01 JP JP2198678A patent/JPS54116188A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58182267A (en) * | 1982-04-16 | 1983-10-25 | Matsushita Electric Ind Co Ltd | Solid-state image pickup device |
| JP2018019068A (en) * | 2016-07-15 | 2018-02-01 | キヤノン株式会社 | Photoelectric conversion device and imaging system |
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