JPS54109729A - Memory circuit - Google Patents

Memory circuit

Info

Publication number
JPS54109729A
JPS54109729A JP1716078A JP1716078A JPS54109729A JP S54109729 A JPS54109729 A JP S54109729A JP 1716078 A JP1716078 A JP 1716078A JP 1716078 A JP1716078 A JP 1716078A JP S54109729 A JPS54109729 A JP S54109729A
Authority
JP
Japan
Prior art keywords
source
drain
cross connection
resistance
fetq3
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1716078A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6240792B2 (cg-RX-API-DMAC7.html
Inventor
Isamu Miyagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1716078A priority Critical patent/JPS54109729A/ja
Publication of JPS54109729A publication Critical patent/JPS54109729A/ja
Publication of JPS6240792B2 publication Critical patent/JPS6240792B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP1716078A 1978-02-16 1978-02-16 Memory circuit Granted JPS54109729A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1716078A JPS54109729A (en) 1978-02-16 1978-02-16 Memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1716078A JPS54109729A (en) 1978-02-16 1978-02-16 Memory circuit

Publications (2)

Publication Number Publication Date
JPS54109729A true JPS54109729A (en) 1979-08-28
JPS6240792B2 JPS6240792B2 (cg-RX-API-DMAC7.html) 1987-08-31

Family

ID=11936209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1716078A Granted JPS54109729A (en) 1978-02-16 1978-02-16 Memory circuit

Country Status (1)

Country Link
JP (1) JPS54109729A (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56114192A (en) * 1980-01-30 1981-09-08 Mostek Corp Ic memory
JP4837051B2 (ja) * 2006-02-22 2011-12-14 グラフィック パッケージング インターナショナル インコーポレイテッド 平らなブランクカートン

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS526037A (en) * 1975-06-30 1977-01-18 Ibm Semiconductor memory array
JPS5291622A (en) * 1976-01-28 1977-08-02 Nec Corp Static memory cell

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS526037A (en) * 1975-06-30 1977-01-18 Ibm Semiconductor memory array
JPS5291622A (en) * 1976-01-28 1977-08-02 Nec Corp Static memory cell

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56114192A (en) * 1980-01-30 1981-09-08 Mostek Corp Ic memory
JP4837051B2 (ja) * 2006-02-22 2011-12-14 グラフィック パッケージング インターナショナル インコーポレイテッド 平らなブランクカートン
US8127518B2 (en) 2006-02-22 2012-03-06 Graphic Packaging International, Inc. Flat blank carton

Also Published As

Publication number Publication date
JPS6240792B2 (cg-RX-API-DMAC7.html) 1987-08-31

Similar Documents

Publication Publication Date Title
JPS5564686A (en) Memory unit
GB1543659A (en) Integrated fet memory cells
SE8000393L (sv) Sett och anordning vid halvledarminnen
GB1350626A (en) Cell for mos random-access integrated circuit memory
JPS5661088A (en) Semiconductor memory device
SE8202234L (sv) Minnesanordning
JPS5372429A (en) Non-volatile semiconductor memory unit
ES521974A0 (es) Perfeccionamientos en celulas fotovoltaicas.
JPS54109729A (en) Memory circuit
NL7701055A (nl) Condensatorgeheugen in geintegreerde halfgelei- derschakeling.
JPS5733493A (en) Semiconductor storage device
JPS55160392A (en) Semiconductor memory
ATE84155T1 (de) Mehrstelliger carry-ripple-addierer in cmostechnik mit zwei typen von addiererzellen.
FI864263A0 (fi) Foer bredbandssignaler avsedd rymdkopplingsanordning.
MX152261A (es) Mejoras en dispositivo semiconductor con capacidad desconexion
KR880004484A (ko) 메모리 셀회로
IT1162085B (it) Dispositivo con funzione di rubinetto applicabile direttamente negli attacchi di idroutensili
JPS5291661A (en) Semiconductor integrated circuit
DE3887658D1 (de) Vorspannungs- und Vorladungsschaltung für eine Bitzeile mit EPROM-Speicherzellen in CMOS-Technologie.
JPS5782288A (en) Dynamic memory
JPS5641586A (en) Memory readout circuit
JPS54101229A (en) Memory circuit
JPS5484934A (en) Semiconductor memory device
JPS54158157A (en) Integrated injection logic gate output circuit
JPS5740798A (en) Read-only storage device