JPS54107278A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54107278A
JPS54107278A JP1342778A JP1342778A JPS54107278A JP S54107278 A JPS54107278 A JP S54107278A JP 1342778 A JP1342778 A JP 1342778A JP 1342778 A JP1342778 A JP 1342778A JP S54107278 A JPS54107278 A JP S54107278A
Authority
JP
Japan
Prior art keywords
well
semiconductor device
peripheral circuit
type
vdd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1342778A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6325714B2 (enrdf_load_stackoverflow
Inventor
Osamu Minato
Toshiaki Masuhara
Toshio Sasaki
Seiji Kubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1342778A priority Critical patent/JPS54107278A/ja
Priority to DE2904812A priority patent/DE2904812C2/de
Publication of JPS54107278A publication Critical patent/JPS54107278A/ja
Publication of JPS6325714B2 publication Critical patent/JPS6325714B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP1342778A 1978-02-10 1978-02-10 Semiconductor device Granted JPS54107278A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1342778A JPS54107278A (en) 1978-02-10 1978-02-10 Semiconductor device
DE2904812A DE2904812C2 (de) 1978-02-10 1979-02-08 Halbleiterspeichereinrichtung in MOS-Technologie

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1342778A JPS54107278A (en) 1978-02-10 1978-02-10 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS54107278A true JPS54107278A (en) 1979-08-22
JPS6325714B2 JPS6325714B2 (enrdf_load_stackoverflow) 1988-05-26

Family

ID=11832832

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1342778A Granted JPS54107278A (en) 1978-02-10 1978-02-10 Semiconductor device

Country Status (2)

Country Link
JP (1) JPS54107278A (enrdf_load_stackoverflow)
DE (1) DE2904812C2 (enrdf_load_stackoverflow)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58125872A (ja) * 1982-01-21 1983-07-27 Nec Corp 電荷結合素子
JPS5922359A (ja) * 1982-07-29 1984-02-04 Nec Corp 集積化半導体記憶装置
JPS6073259U (ja) * 1983-10-26 1985-05-23 三洋電機株式会社 ダイナミツクｒｏｍ
JPS61214448A (ja) * 1985-03-19 1986-09-24 Fujitsu Ltd 半導体集積回路
JPS6251252A (ja) * 1985-08-30 1987-03-05 Toshiba Corp ランダムアクセスメモリ
JPS6251251A (ja) * 1985-08-30 1987-03-05 Toshiba Corp スタテイツク型ランダムアクセスメモリ
US4860255A (en) * 1981-05-13 1989-08-22 Hitachi, Ltd. Semiconductor memory
US4954866A (en) * 1987-09-24 1990-09-04 Hitachi, Ltd. Semiconductor integrated circuit memory
US5196910A (en) * 1987-04-24 1993-03-23 Hitachi, Ltd. Semiconductor memory device with recessed array region
JPH06260551A (ja) * 1982-11-26 1994-09-16 Inmos Ltd マイクロコンピュータ
USRE38296E1 (en) * 1987-04-24 2003-11-04 Hitachi, Ltd. Semiconductor memory device with recessed array region

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4442529A (en) * 1981-02-04 1984-04-10 At&T Bell Telephone Laboratories, Incorporated Power supply rejection characteristics of CMOS circuits
JPH0420550U (enrdf_load_stackoverflow) * 1990-06-11 1992-02-20

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3733591A (en) * 1970-06-24 1973-05-15 Westinghouse Electric Corp Non-volatile memory element

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4860255A (en) * 1981-05-13 1989-08-22 Hitachi, Ltd. Semiconductor memory
JPS58125872A (ja) * 1982-01-21 1983-07-27 Nec Corp 電荷結合素子
JPS5922359A (ja) * 1982-07-29 1984-02-04 Nec Corp 集積化半導体記憶装置
JPH06260551A (ja) * 1982-11-26 1994-09-16 Inmos Ltd マイクロコンピュータ
JPS6073259U (ja) * 1983-10-26 1985-05-23 三洋電機株式会社 ダイナミツクｒｏｍ
JPS61214448A (ja) * 1985-03-19 1986-09-24 Fujitsu Ltd 半導体集積回路
JPS6251252A (ja) * 1985-08-30 1987-03-05 Toshiba Corp ランダムアクセスメモリ
JPS6251251A (ja) * 1985-08-30 1987-03-05 Toshiba Corp スタテイツク型ランダムアクセスメモリ
US5196910A (en) * 1987-04-24 1993-03-23 Hitachi, Ltd. Semiconductor memory device with recessed array region
USRE38296E1 (en) * 1987-04-24 2003-11-04 Hitachi, Ltd. Semiconductor memory device with recessed array region
US4954866A (en) * 1987-09-24 1990-09-04 Hitachi, Ltd. Semiconductor integrated circuit memory

Also Published As

Publication number Publication date
DE2904812C2 (de) 1986-05-15
DE2904812A1 (de) 1979-08-16
JPS6325714B2 (enrdf_load_stackoverflow) 1988-05-26

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