JPS54106180A - Manufacture of semiconductor integrated circuit - Google Patents
Manufacture of semiconductor integrated circuitInfo
- Publication number
- JPS54106180A JPS54106180A JP1314678A JP1314678A JPS54106180A JP S54106180 A JPS54106180 A JP S54106180A JP 1314678 A JP1314678 A JP 1314678A JP 1314678 A JP1314678 A JP 1314678A JP S54106180 A JPS54106180 A JP S54106180A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- impurity density
- heat treatment
- atom
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1314678A JPS54106180A (en) | 1978-02-08 | 1978-02-08 | Manufacture of semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1314678A JPS54106180A (en) | 1978-02-08 | 1978-02-08 | Manufacture of semiconductor integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54106180A true JPS54106180A (en) | 1979-08-20 |
JPS5626982B2 JPS5626982B2 (ja) | 1981-06-22 |
Family
ID=11825013
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1314678A Granted JPS54106180A (en) | 1978-02-08 | 1978-02-08 | Manufacture of semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54106180A (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56100477A (en) * | 1980-01-16 | 1981-08-12 | Toshiba Corp | Semiconductor device |
US4502205A (en) * | 1982-06-23 | 1985-03-05 | Fujitsu Limited | Method of manufacturing an MIS type semiconductor device |
JPH0397224A (ja) * | 1989-09-11 | 1991-04-23 | Toshiba Corp | 半導体装置の製造方法 |
US5338697A (en) * | 1989-12-01 | 1994-08-16 | Seiko Instruments Inc. | Doping method of barrier region in semiconductor device |
US5532185A (en) * | 1991-03-27 | 1996-07-02 | Seiko Instruments Inc. | Impurity doping method with adsorbed diffusion source |
EP0722181A1 (en) * | 1993-08-20 | 1996-07-17 | OHMI, Tadahiro | Ionen implantierungsgerät |
-
1978
- 1978-02-08 JP JP1314678A patent/JPS54106180A/ja active Granted
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56100477A (en) * | 1980-01-16 | 1981-08-12 | Toshiba Corp | Semiconductor device |
US4502205A (en) * | 1982-06-23 | 1985-03-05 | Fujitsu Limited | Method of manufacturing an MIS type semiconductor device |
JPH0397224A (ja) * | 1989-09-11 | 1991-04-23 | Toshiba Corp | 半導体装置の製造方法 |
US5338697A (en) * | 1989-12-01 | 1994-08-16 | Seiko Instruments Inc. | Doping method of barrier region in semiconductor device |
US5532185A (en) * | 1991-03-27 | 1996-07-02 | Seiko Instruments Inc. | Impurity doping method with adsorbed diffusion source |
EP0722181A1 (en) * | 1993-08-20 | 1996-07-17 | OHMI, Tadahiro | Ionen implantierungsgerät |
EP0722181A4 (en) * | 1993-08-20 | 1997-01-08 | Tadahiro Ohmi | ION IMPLANTER |
Also Published As
Publication number | Publication date |
---|---|
JPS5626982B2 (ja) | 1981-06-22 |
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