JPS54100987A - Ion plating device - Google Patents

Ion plating device

Info

Publication number
JPS54100987A
JPS54100987A JP739578A JP739578A JPS54100987A JP S54100987 A JPS54100987 A JP S54100987A JP 739578 A JP739578 A JP 739578A JP 739578 A JP739578 A JP 739578A JP S54100987 A JPS54100987 A JP S54100987A
Authority
JP
Japan
Prior art keywords
base plate
thin film
room
evaporation source
metal membrane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP739578A
Other languages
Japanese (ja)
Other versions
JPS569268B2 (en
Inventor
Takeshi Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP739578A priority Critical patent/JPS54100987A/en
Publication of JPS54100987A publication Critical patent/JPS54100987A/en
Publication of JPS569268B2 publication Critical patent/JPS569268B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To form a high purity thin film for semiconductor thin film by the procedure in which all parts but the base plate of base plate holder are covered with an insulating part whose outside surface is provided with a metal membrane, and the metal membrane is earthed or is given a positive potential. CONSTITUTION:While the vacuum thin film-forming room 1 and the electron beam- generating room 3 are evacuated to vacuum through the exhaust duct 4, a small amount of Ar gas is supplied to the room 1 and the room is kept at 10<-3> to 10<-4> Torr. Then, the base plate 8 is heated to approx. 800 deg.C, for example, and at the same time the semiconductor 6, e.g., n-type Sn ingot, etc., for evaporation, put in the electron beam heat evaporation source 7, is evaporated by heating. At this time, a high frequency is applied to the high frequency coil 10 to cause discharge, whereby Si atom is ionized and Si thin film is formed over the base plate 8. In this case, the base plate 8 portion of the base plate holder 9 is removed and then covered with the quartz cover 11 wholly, the outside of which is provided with the metal membrane 12 which is earthed so as to have the same potential as the evaporation source 7 or is given a potential higher than the positive potential of the evaporation source 7. Thus, the concentration of harmful impurities metal atoms due to sputtering for the holder 9 can be reduced.
JP739578A 1978-01-27 1978-01-27 Ion plating device Granted JPS54100987A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP739578A JPS54100987A (en) 1978-01-27 1978-01-27 Ion plating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP739578A JPS54100987A (en) 1978-01-27 1978-01-27 Ion plating device

Publications (2)

Publication Number Publication Date
JPS54100987A true JPS54100987A (en) 1979-08-09
JPS569268B2 JPS569268B2 (en) 1981-02-28

Family

ID=11664711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP739578A Granted JPS54100987A (en) 1978-01-27 1978-01-27 Ion plating device

Country Status (1)

Country Link
JP (1) JPS54100987A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4511594A (en) * 1982-01-28 1985-04-16 Fuji Photo Film Co., Ltd. System of manufacturing magnetic recording media
US4619748A (en) * 1985-03-01 1986-10-28 Balzers Aktiengesellschaft Method and apparatus for the reactive vapor deposition of layers of oxides, nitrides, oxynitrides and carbides on a substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4511594A (en) * 1982-01-28 1985-04-16 Fuji Photo Film Co., Ltd. System of manufacturing magnetic recording media
US4619748A (en) * 1985-03-01 1986-10-28 Balzers Aktiengesellschaft Method and apparatus for the reactive vapor deposition of layers of oxides, nitrides, oxynitrides and carbides on a substrate

Also Published As

Publication number Publication date
JPS569268B2 (en) 1981-02-28

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