JPS538578A - Field controlled thyristor - Google Patents

Field controlled thyristor

Info

Publication number
JPS538578A
JPS538578A JP7290277A JP7290277A JPS538578A JP S538578 A JPS538578 A JP S538578A JP 7290277 A JP7290277 A JP 7290277A JP 7290277 A JP7290277 A JP 7290277A JP S538578 A JPS538578 A JP S538578A
Authority
JP
Japan
Prior art keywords
controlled thyristor
field controlled
field
thyristor
controlled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7290277A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5643622B2 (US08188275-20120529-C00054.png
Inventor
Yuugen Hiyuusuton Dagurasu
Kurishiyuna Surindaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS538578A publication Critical patent/JPS538578A/ja
Publication of JPS5643622B2 publication Critical patent/JPS5643622B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1066—Gate region of field-effect devices with PN junction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
JP7290277A 1976-06-21 1977-06-21 Field controlled thyristor Granted JPS538578A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/697,984 US4060821A (en) 1976-06-21 1976-06-21 Field controlled thyristor with buried grid

Publications (2)

Publication Number Publication Date
JPS538578A true JPS538578A (en) 1978-01-26
JPS5643622B2 JPS5643622B2 (US08188275-20120529-C00054.png) 1981-10-14

Family

ID=24803423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7290277A Granted JPS538578A (en) 1976-06-21 1977-06-21 Field controlled thyristor

Country Status (7)

Country Link
US (1) US4060821A (US08188275-20120529-C00054.png)
JP (1) JPS538578A (US08188275-20120529-C00054.png)
DE (1) DE2727405C2 (US08188275-20120529-C00054.png)
FR (1) FR2356278A1 (US08188275-20120529-C00054.png)
GB (1) GB1568586A (US08188275-20120529-C00054.png)
NL (1) NL7706095A (US08188275-20120529-C00054.png)
SE (1) SE428406B (US08188275-20120529-C00054.png)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS542077A (en) * 1977-06-08 1979-01-09 Hitachi Ltd Semiconductor switching element
JPS5428579A (en) * 1977-08-05 1979-03-03 Hitachi Ltd Field effect switching element
WO1982001788A1 (fr) * 1980-11-21 1982-05-27 Nishikzawa Junichi Tristor d'induction statique

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54112157A (en) * 1978-02-23 1979-09-01 Hitachi Ltd Control circuit for field effect thyristor
JPS6036708B2 (ja) * 1978-02-24 1985-08-22 株式会社日立製作所 電界効果形サイリスタのゲ−ト回路
JPS5936832B2 (ja) * 1978-03-14 1984-09-06 株式会社日立製作所 半導体スイッチング素子
US4514747A (en) * 1978-08-07 1985-04-30 Hitachi, Ltd. Field controlled thyristor with double-diffused source region
JPS6046551B2 (ja) * 1978-08-07 1985-10-16 株式会社日立製作所 半導体スイツチング素子およびその製法
DE2953387A1 (de) * 1978-12-20 1980-12-11 Western Electric Co High voltage dielectrically isolated solid-state switch
DE2953413A1 (de) * 1978-12-20 1980-12-04 Western Electric Co Control circuitry for gated diode switches
HU180115B (en) * 1978-12-20 1983-02-28 Western Electric Co Circuit arrangement for controlling switches with controlled diodes
US4602268A (en) * 1978-12-20 1986-07-22 At&T Bell Laboratories High voltage dielectrically isolated dual gate solid-state switch
HU181029B (en) * 1978-12-20 1983-05-30 Western Electric Co Switching circuit containing controlled dioda switch
US4608590A (en) * 1978-12-20 1986-08-26 At&T Bell Laboratories High voltage dielectrically isolated solid-state switch
US4586073A (en) * 1978-12-20 1986-04-29 At&T Bell Laboratories High voltage junction solid-state switch
US4587545A (en) * 1978-12-20 1986-05-06 At&T Bell Laboratories High voltage dielectrically isolated remote gate solid-state switch
DE3068968D1 (en) * 1979-11-16 1984-09-20 Gen Electric Asymmetrical field controlled thyristor
US4587656A (en) * 1979-12-28 1986-05-06 At&T Bell Laboratories High voltage solid-state switch
US4250409A (en) * 1979-12-28 1981-02-10 Bell Telephone Laboratories, Incorporated Control circuitry using a pull-down transistor for high voltage field terminated diode solid-state switches
US4656366A (en) * 1979-12-28 1987-04-07 American Telephone And Telegraph Company At&T Bell Laboratories Control circuitry using two branch circuits for high voltage solid-state switches
JPS58500427A (ja) * 1981-03-27 1983-03-17 ウエスタ−ン　エレクトリツク　カムパニ−，インコ−ポレ−テツド ゲ−テツド・ダイオ−ド・スイツチ
US4466173A (en) * 1981-11-23 1984-08-21 General Electric Company Methods for fabricating vertical channel buried grid field controlled devices including field effect transistors and field controlled thyristors utilizing etch and refill techniques
JPS5885525U (ja) * 1981-12-04 1983-06-10 株式会社をくだ屋技研 運搬作業車の走行装置
US4835586A (en) * 1987-09-21 1989-05-30 Siliconix Incorporated Dual-gate high density fet
GB2230136B (en) * 1989-03-28 1993-02-10 Matsushita Electric Works Ltd Method for manufacturing static induction type semiconductor device and semiconductor devices manufactured thereby
US6011279A (en) * 1997-04-30 2000-01-04 Cree Research, Inc. Silicon carbide field controlled bipolar switch
SE9704149D0 (sv) * 1997-11-13 1997-11-13 Abb Research Ltd A semiconductor device of SiC and a transistor of SiC having an insulated gate

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1361920A (fr) * 1963-02-19 1964-05-29 Perfectionnements aux dispositifs semiconducteurs dits tecnetrons de puissance
US3439192A (en) * 1964-05-27 1969-04-15 Jeumont Schneider Control circuits for field-effect bipolar switching devices
US3363153A (en) * 1965-06-01 1968-01-09 Gen Telephone & Elect Solid state triode having gate electrode therein subtending a portion of the source electrode
CH436492A (de) * 1965-10-21 1967-05-31 Bbc Brown Boveri & Cie Steuerbare Halbleitervorrichtung mit mehreren Schichten
US3398337A (en) * 1966-04-25 1968-08-20 John J. So Short-channel field-effect transistor having an impurity gradient in the channel incrasing from a midpoint to each end
FR1497548A (fr) * 1966-07-22 1967-10-13 Jeumont Schneider Dispositif semi-conducteur bistable pour courants forts
US3497777A (en) * 1967-06-13 1970-02-24 Stanislas Teszner Multichannel field-effect semi-conductor device
US3841917A (en) * 1971-09-06 1974-10-15 Philips Nv Methods of manufacturing semiconductor devices
DE2233786C3 (de) * 1972-01-24 1982-03-11 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Thyristor mit erhöhter Ein- und Durchschaltgeschwindigkeit
FR2174774B1 (US08188275-20120529-C00054.png) * 1972-03-10 1977-01-14 Teszner Stanislas
FR2299727A1 (fr) * 1975-01-28 1976-08-27 Alsthom Cgee Thyristor a caracteristiques de commutation ameliorees

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS542077A (en) * 1977-06-08 1979-01-09 Hitachi Ltd Semiconductor switching element
JPS5751981B2 (US08188275-20120529-C00054.png) * 1977-06-08 1982-11-05
JPS5428579A (en) * 1977-08-05 1979-03-03 Hitachi Ltd Field effect switching element
JPS5751982B2 (US08188275-20120529-C00054.png) * 1977-08-05 1982-11-05
WO1982001788A1 (fr) * 1980-11-21 1982-05-27 Nishikzawa Junichi Tristor d'induction statique

Also Published As

Publication number Publication date
FR2356278A1 (fr) 1978-01-20
US4060821A (en) 1977-11-29
DE2727405C2 (de) 1982-09-02
SE428406B (sv) 1983-06-27
DE2727405A1 (de) 1977-12-29
JPS5643622B2 (US08188275-20120529-C00054.png) 1981-10-14
FR2356278B1 (US08188275-20120529-C00054.png) 1983-05-27
SE7707188L (sv) 1977-12-22
NL7706095A (nl) 1977-12-23
GB1568586A (en) 1980-06-04

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