FR1361920A - Perfectionnements aux dispositifs semiconducteurs dits tecnetrons de puissance - Google Patents

Perfectionnements aux dispositifs semiconducteurs dits tecnetrons de puissance

Info

Publication number
FR1361920A
FR1361920A FR925330A FR925330A FR1361920A FR 1361920 A FR1361920 A FR 1361920A FR 925330 A FR925330 A FR 925330A FR 925330 A FR925330 A FR 925330A FR 1361920 A FR1361920 A FR 1361920A
Authority
FR
France
Prior art keywords
tecnetrons
power
semiconductor devices
devices known
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR925330A
Other languages
English (en)
Inventor
Stanislas Teszner
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to FR925330A priority Critical patent/FR1361920A/fr
Priority to FR962283A priority patent/FR85184E/fr
Priority to BE643783D priority patent/BE643783A/fr
Priority to NL6401336A priority patent/NL6401336A/xx
Priority to US345419A priority patent/US3227896A/en
Priority to CH184964A priority patent/CH422998A/fr
Priority to DE1439674A priority patent/DE1439674C3/de
Priority to GB685964A priority patent/GB1051773A/en
Application granted granted Critical
Publication of FR1361920A publication Critical patent/FR1361920A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/68—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors specially adapted for switching AC currents or voltages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
FR925330A 1963-02-19 1963-02-19 Perfectionnements aux dispositifs semiconducteurs dits tecnetrons de puissance Expired FR1361920A (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR925330A FR1361920A (fr) 1963-02-19 1963-02-19 Perfectionnements aux dispositifs semiconducteurs dits tecnetrons de puissance
FR962283A FR85184E (fr) 1963-02-19 1964-02-01 Perfectionnements aux dispositifs semiconducteurs dits tecnetrons de puissance
BE643783D BE643783A (fr) 1963-02-19 1964-02-13 Dispositif de commutation de puissance à semi-conducteur
NL6401336A NL6401336A (nl) 1963-02-19 1964-02-14 Halfgeleiderommmmutator
US345419A US3227896A (en) 1963-02-19 1964-02-17 Power switching field effect transistor
CH184964A CH422998A (fr) 1963-02-19 1964-02-17 Dispositif de commutation de puissance à semi-conducteur
DE1439674A DE1439674C3 (de) 1963-02-19 1964-02-18 Steuerbares und schaltbares pn-Halbleiterbauelement für große elektrische Leistungen
GB685964A GB1051773A (en) 1963-02-19 1964-02-19 Improvements in and relating to Semiconductor Devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR925330A FR1361920A (fr) 1963-02-19 1963-02-19 Perfectionnements aux dispositifs semiconducteurs dits tecnetrons de puissance

Publications (1)

Publication Number Publication Date
FR1361920A true FR1361920A (fr) 1964-05-29

Family

ID=32039542

Family Applications (2)

Application Number Title Priority Date Filing Date
FR925330A Expired FR1361920A (fr) 1963-02-19 1963-02-19 Perfectionnements aux dispositifs semiconducteurs dits tecnetrons de puissance
FR962283A Expired FR85184E (fr) 1963-02-19 1964-02-01 Perfectionnements aux dispositifs semiconducteurs dits tecnetrons de puissance

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR962283A Expired FR85184E (fr) 1963-02-19 1964-02-01 Perfectionnements aux dispositifs semiconducteurs dits tecnetrons de puissance

Country Status (1)

Country Link
FR (2) FR1361920A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4060821A (en) * 1976-06-21 1977-11-29 General Electric Co. Field controlled thyristor with buried grid
US4587540A (en) * 1982-04-05 1986-05-06 International Business Machines Corporation Vertical MESFET with mesa step defining gate length

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4060821A (en) * 1976-06-21 1977-11-29 General Electric Co. Field controlled thyristor with buried grid
US4587540A (en) * 1982-04-05 1986-05-06 International Business Machines Corporation Vertical MESFET with mesa step defining gate length

Also Published As

Publication number Publication date
FR85184E (fr) 1965-06-25

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