JPS5382280A - Gallium phosphide emtting device - Google Patents

Gallium phosphide emtting device

Info

Publication number
JPS5382280A
JPS5382280A JP15736076A JP15736076A JPS5382280A JP S5382280 A JPS5382280 A JP S5382280A JP 15736076 A JP15736076 A JP 15736076A JP 15736076 A JP15736076 A JP 15736076A JP S5382280 A JPS5382280 A JP S5382280A
Authority
JP
Japan
Prior art keywords
gallium phosphide
emtting
type gap
emtting device
efficeincy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15736076A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5412400B2 (enExample
Inventor
Akihiro Hachiman
Masaru Kawachi
Makoto Naito
Akinobu Kasami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15736076A priority Critical patent/JPS5382280A/ja
Publication of JPS5382280A publication Critical patent/JPS5382280A/ja
Publication of JPS5412400B2 publication Critical patent/JPS5412400B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP15736076A 1976-12-28 1976-12-28 Gallium phosphide emtting device Granted JPS5382280A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15736076A JPS5382280A (en) 1976-12-28 1976-12-28 Gallium phosphide emtting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15736076A JPS5382280A (en) 1976-12-28 1976-12-28 Gallium phosphide emtting device

Publications (2)

Publication Number Publication Date
JPS5382280A true JPS5382280A (en) 1978-07-20
JPS5412400B2 JPS5412400B2 (enExample) 1979-05-22

Family

ID=15647954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15736076A Granted JPS5382280A (en) 1976-12-28 1976-12-28 Gallium phosphide emtting device

Country Status (1)

Country Link
JP (1) JPS5382280A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5302839A (en) * 1991-07-29 1994-04-12 Shin-Etsu Handotai Co., Ltd. Light emitting diode having an improved GaP compound substrate for an epitaxial growth layer thereon
EP0597402A1 (en) * 1992-11-07 1994-05-18 Shin-Etsu Handotai Kabushiki Kaisha A GaP light emitting element substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50106593A (enExample) * 1974-01-29 1975-08-22

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50106593A (enExample) * 1974-01-29 1975-08-22

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5302839A (en) * 1991-07-29 1994-04-12 Shin-Etsu Handotai Co., Ltd. Light emitting diode having an improved GaP compound substrate for an epitaxial growth layer thereon
EP0597402A1 (en) * 1992-11-07 1994-05-18 Shin-Etsu Handotai Kabushiki Kaisha A GaP light emitting element substrate
JPH06151961A (ja) * 1992-11-07 1994-05-31 Shin Etsu Handotai Co Ltd ＧａＰ系発光素子基板
US5349208A (en) * 1992-11-07 1994-09-20 Shin Etsu Handotai Kabushiki Kaisha GaP light emitting element substrate with oxygen doped buffer

Also Published As

Publication number Publication date
JPS5412400B2 (enExample) 1979-05-22

Similar Documents

Publication Publication Date Title
JPS51137393A (en) Manufacturing method for semiconductor light emitting device
JPS5382280A (en) Gallium phosphide emtting device
JPS51118395A (en) Semiconductor emitting unit and manufacturing process
JPS51134594A (en) Semiconductor leser device
JPS5353991A (en) Gallium phosphide light emitting element
JPS546789A (en) Semiconductor light emitting device
JPS5263088A (en) Production of gaas light emitting diode
JPS52147088A (en) Light emitting device
JPS5238272A (en) Device for cheking operating condition of electric circuits
JPS5376690A (en) Solid light emitting device
JPS52156587A (en) Gallim phosphide green light emitting diode
JPS5360192A (en) Production of light emitting diode
JPS5211886A (en) Luminance stabilizing method in a light emitting diode
JPS5285490A (en) Semiconductor light emitting element
JPS52146583A (en) Visible light emitting laser device
JPS531475A (en) Manufacture for shottkey diode
JPS5223357A (en) Semiconductor photomodulator
JPS5291696A (en) Display device
JPS5384582A (en) Manufacture for light emitting element
JPS5279680A (en) Semiconductor light emitting device
JPS51149783A (en) Gallium phosphide luminant display device
JPS52141558A (en) Field emission type electron gun
JPS5361287A (en) Compound semiconductor light emitting element
JPS51114878A (en) Gap etching process
JPS52141190A (en) Light emitting diode