JPS5376139A - Silicon etch component - Google Patents

Silicon etch component

Info

Publication number
JPS5376139A
JPS5376139A JP13483877A JP13483877A JPS5376139A JP S5376139 A JPS5376139 A JP S5376139A JP 13483877 A JP13483877 A JP 13483877A JP 13483877 A JP13483877 A JP 13483877A JP S5376139 A JPS5376139 A JP S5376139A
Authority
JP
Japan
Prior art keywords
silicon etch
etch component
component
silicon
etch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13483877A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5550112B2 (OSRAM
Inventor
Riuu Chienniu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5376139A publication Critical patent/JPS5376139A/ja
Publication of JPS5550112B2 publication Critical patent/JPS5550112B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Surface Treatment Of Glass (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Detergent Compositions (AREA)
JP13483877A 1976-12-17 1977-11-11 Silicon etch component Granted JPS5376139A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75161976A 1976-12-17 1976-12-17

Publications (2)

Publication Number Publication Date
JPS5376139A true JPS5376139A (en) 1978-07-06
JPS5550112B2 JPS5550112B2 (OSRAM) 1980-12-16

Family

ID=25022795

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13483877A Granted JPS5376139A (en) 1976-12-17 1977-11-11 Silicon etch component

Country Status (4)

Country Link
JP (1) JPS5376139A (OSRAM)
DE (1) DE2752482A1 (OSRAM)
FR (1) FR2374396A1 (OSRAM)
GB (1) GB1588843A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6171512B1 (en) 1991-02-15 2001-01-09 Canon Kabushiki Kaisha Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution
KR20180111673A (ko) 2017-03-31 2018-10-11 간또 가가꾸 가부시끼가이샤 에칭액 조성물 및 에칭 방법

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55153338A (en) * 1979-05-18 1980-11-29 Fujitsu Ltd Surface treatment of semiconductor substrate
DE2951292A1 (de) * 1979-12-20 1981-07-02 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zum dotieren von siliciumkoerpern durch eindiffundieren von bor
JPS6022521U (ja) * 1983-07-19 1985-02-16 横浜ゴム株式会社 防舷装置
US4536322A (en) * 1983-10-28 1985-08-20 Union Carbide Corporation Fluorescent corrosive fluoride solution
CA1313612C (en) * 1987-01-27 1993-02-16 Michael Scardera Etching solutions containing ammonium fluoride
EP1347505A3 (en) * 1991-02-15 2004-10-20 Canon Kabushiki Kaisha Method of preparing semiconductor member using an etching solution
DE69232347T2 (de) * 1991-09-27 2002-07-11 Canon K.K., Tokio/Tokyo Verfahren zur Behandlung eines Substrats aus Silizium
EP1824945A4 (en) * 2004-11-19 2008-08-06 Honeywell Int Inc CHEMICALS FOR SELECTIVE REMOVAL FOR SEMICONDUCTOR APPLICATIONS, METHODS OF MANUFACTURE AND IDOINE USES
JP5017709B2 (ja) 2006-09-07 2012-09-05 ジルトロニック アクチエンゲゼルシャフト シリコンウェーハのエッチング方法および半導体シリコンウェーハの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50341A (OSRAM) * 1973-05-07 1975-01-06
JPS509268A (OSRAM) * 1973-05-30 1975-01-30

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2847287A (en) * 1956-07-20 1958-08-12 Bell Telephone Labor Inc Etching processes and solutions
BE531769A (OSRAM) * 1957-08-07 1900-01-01
NL257610A (OSRAM) * 1959-11-05
FR1266612A (fr) * 1960-06-02 1961-07-17 Solutions d'attaque chimiques pour le traitement en surface des matériaux semiconducteurs
US3773578A (en) * 1970-12-01 1973-11-20 Us Army Method of continuously etching a silicon substrate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50341A (OSRAM) * 1973-05-07 1975-01-06
JPS509268A (OSRAM) * 1973-05-30 1975-01-30

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6171512B1 (en) 1991-02-15 2001-01-09 Canon Kabushiki Kaisha Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution
US6238586B1 (en) 1991-02-15 2001-05-29 Canon Kabushiki Kaisha Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution
US6254794B1 (en) 1991-02-15 2001-07-03 Canon Kabushiki Kaisha Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution
KR20180111673A (ko) 2017-03-31 2018-10-11 간또 가가꾸 가부시끼가이샤 에칭액 조성물 및 에칭 방법

Also Published As

Publication number Publication date
DE2752482A1 (de) 1978-06-22
FR2374396A1 (fr) 1978-07-13
GB1588843A (en) 1981-04-29
FR2374396B1 (OSRAM) 1980-08-08
JPS5550112B2 (OSRAM) 1980-12-16

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