JPS5375737A - Injection type bipolar memory cell - Google Patents

Injection type bipolar memory cell

Info

Publication number
JPS5375737A
JPS5375737A JP15077876A JP15077876A JPS5375737A JP S5375737 A JPS5375737 A JP S5375737A JP 15077876 A JP15077876 A JP 15077876A JP 15077876 A JP15077876 A JP 15077876A JP S5375737 A JPS5375737 A JP S5375737A
Authority
JP
Japan
Prior art keywords
memory cell
injection type
type bipolar
bipolar memory
domain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15077876A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5723355B2 (enrdf_load_html_response
Inventor
Satoshi Shinozaki
Junichi Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15077876A priority Critical patent/JPS5375737A/ja
Publication of JPS5375737A publication Critical patent/JPS5375737A/ja
Publication of JPS5723355B2 publication Critical patent/JPS5723355B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Bipolar Integrated Circuits (AREA)
JP15077876A 1976-12-17 1976-12-17 Injection type bipolar memory cell Granted JPS5375737A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15077876A JPS5375737A (en) 1976-12-17 1976-12-17 Injection type bipolar memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15077876A JPS5375737A (en) 1976-12-17 1976-12-17 Injection type bipolar memory cell

Publications (2)

Publication Number Publication Date
JPS5375737A true JPS5375737A (en) 1978-07-05
JPS5723355B2 JPS5723355B2 (enrdf_load_html_response) 1982-05-18

Family

ID=15504210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15077876A Granted JPS5375737A (en) 1976-12-17 1976-12-17 Injection type bipolar memory cell

Country Status (1)

Country Link
JP (1) JPS5375737A (enrdf_load_html_response)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5674959A (en) * 1979-11-22 1981-06-20 Fujitsu Ltd Semiconductor memroy
JPS589358A (ja) * 1981-07-09 1983-01-19 Mitsubishi Electric Corp 半導体集積回路装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN=1976 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5674959A (en) * 1979-11-22 1981-06-20 Fujitsu Ltd Semiconductor memroy
JPS589358A (ja) * 1981-07-09 1983-01-19 Mitsubishi Electric Corp 半導体集積回路装置

Also Published As

Publication number Publication date
JPS5723355B2 (enrdf_load_html_response) 1982-05-18

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