JPS5362433A - Sense circuit - Google Patents

Sense circuit

Info

Publication number
JPS5362433A
JPS5362433A JP13728776A JP13728776A JPS5362433A JP S5362433 A JPS5362433 A JP S5362433A JP 13728776 A JP13728776 A JP 13728776A JP 13728776 A JP13728776 A JP 13728776A JP S5362433 A JPS5362433 A JP S5362433A
Authority
JP
Japan
Prior art keywords
sense circuit
precharging
mosfet
voltage
value lower
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13728776A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5721792B2 (OSRAM
Inventor
Toshio Sasaki
Ryoichi Hori
Nobuaki Ieda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
NTT Inc
Original Assignee
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Nippon Telegraph and Telephone Corp filed Critical Hitachi Ltd
Priority to JP13728776A priority Critical patent/JPS5362433A/ja
Publication of JPS5362433A publication Critical patent/JPS5362433A/ja
Publication of JPS5721792B2 publication Critical patent/JPS5721792B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP13728776A 1976-11-17 1976-11-17 Sense circuit Granted JPS5362433A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13728776A JPS5362433A (en) 1976-11-17 1976-11-17 Sense circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13728776A JPS5362433A (en) 1976-11-17 1976-11-17 Sense circuit

Publications (2)

Publication Number Publication Date
JPS5362433A true JPS5362433A (en) 1978-06-03
JPS5721792B2 JPS5721792B2 (OSRAM) 1982-05-10

Family

ID=15195145

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13728776A Granted JPS5362433A (en) 1976-11-17 1976-11-17 Sense circuit

Country Status (1)

Country Link
JP (1) JPS5362433A (OSRAM)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5647989A (en) * 1979-09-21 1981-04-30 Nec Corp Memory circuit
JPS5782124U (OSRAM) * 1980-11-06 1982-05-21
JPS5782290A (en) * 1980-11-12 1982-05-22 Toshiba Corp Semiconductor storage device
JPS6252790A (ja) * 1985-08-30 1987-03-07 Toshiba Corp 半導体メモリのセンスアンプ系
JPH03198285A (ja) * 1989-12-26 1991-08-29 Sharp Corp 半導体記憶装置の読み出し回路
JPH08297977A (ja) * 1996-06-07 1996-11-12 Matsushita Electric Ind Co Ltd センスアンプ回路
CN102411979A (zh) * 2011-11-18 2012-04-11 中国科学院声学研究所 一种单端位线的低摆幅预充电电路

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5647989A (en) * 1979-09-21 1981-04-30 Nec Corp Memory circuit
JPS5782124U (OSRAM) * 1980-11-06 1982-05-21
JPS5782290A (en) * 1980-11-12 1982-05-22 Toshiba Corp Semiconductor storage device
JPS6252790A (ja) * 1985-08-30 1987-03-07 Toshiba Corp 半導体メモリのセンスアンプ系
JPH03198285A (ja) * 1989-12-26 1991-08-29 Sharp Corp 半導体記憶装置の読み出し回路
JPH08297977A (ja) * 1996-06-07 1996-11-12 Matsushita Electric Ind Co Ltd センスアンプ回路
CN102411979A (zh) * 2011-11-18 2012-04-11 中国科学院声学研究所 一种单端位线的低摆幅预充电电路

Also Published As

Publication number Publication date
JPS5721792B2 (OSRAM) 1982-05-10

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