JPS5347689B2 - - Google Patents
Info
- Publication number
- JPS5347689B2 JPS5347689B2 JP13037777A JP13037777A JPS5347689B2 JP S5347689 B2 JPS5347689 B2 JP S5347689B2 JP 13037777 A JP13037777 A JP 13037777A JP 13037777 A JP13037777 A JP 13037777A JP S5347689 B2 JPS5347689 B2 JP S5347689B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/136—Coating process making radiation sensitive element
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/752,949 US4087569A (en) | 1976-12-20 | 1976-12-20 | Prebaking treatment for resist mask composition and mask making process using same |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5376826A JPS5376826A (en) | 1978-07-07 |
JPS5347689B2 true JPS5347689B2 (US07943777-20110517-C00090.png) | 1978-12-22 |
Family
ID=25028557
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13037777A Granted JPS5376826A (en) | 1976-12-20 | 1977-11-01 | Method of forming regist image |
Country Status (5)
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62144102U (US07943777-20110517-C00090.png) * | 1986-03-04 | 1987-09-11 | ||
JPH031124Y2 (US07943777-20110517-C00090.png) * | 1985-12-20 | 1991-01-16 |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5471579A (en) * | 1977-11-17 | 1979-06-08 | Matsushita Electric Ind Co Ltd | Electron beam resist |
DE2828128A1 (de) * | 1978-06-27 | 1980-01-10 | Licentia Gmbh | Strahlungsempfindliche positiv arbeitende materialien |
JPS5553423A (en) * | 1978-10-16 | 1980-04-18 | Fujitsu Ltd | Pattern forming |
JPS5568630A (en) * | 1978-11-17 | 1980-05-23 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Pattern formation |
JPS5590942A (en) * | 1978-12-29 | 1980-07-10 | Fujitsu Ltd | Positive type resist material |
EP0016679B1 (fr) * | 1979-03-09 | 1982-06-09 | Thomson-Csf | Substances de photomasquage, leur procédé de préparation, et masque obtenu |
JPS5614232A (en) * | 1979-07-16 | 1981-02-12 | Mitsubishi Rayon Co Ltd | Negative type resist resin |
JPS5639539A (en) * | 1979-09-07 | 1981-04-15 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Pattern forming method |
US4321317A (en) * | 1980-04-28 | 1982-03-23 | General Motors Corporation | High resolution lithography system for microelectronic fabrication |
DE3039110A1 (de) * | 1980-10-16 | 1982-05-13 | Siemens AG, 1000 Berlin und 8000 München | Verfahren fuer die spannungsfreie entwicklung von bestrahlten polymethylmetacrylatschichten |
US4430419A (en) * | 1981-01-22 | 1984-02-07 | Nippon Telegraph & Telephone Public Corporation | Positive resist and method for manufacturing a pattern thereof |
US4415653A (en) * | 1981-05-07 | 1983-11-15 | Honeywell Inc. | Method of making sensitive positive electron beam resists |
EP0064864B1 (en) * | 1981-05-07 | 1989-12-13 | Honeywell Inc. | Method of making sensitive positive electron beam resists |
US4410611A (en) * | 1981-08-31 | 1983-10-18 | General Motors Corporation | Hard and adherent layers from organic resin coatings |
US4476217A (en) * | 1982-05-10 | 1984-10-09 | Honeywell Inc. | Sensitive positive electron beam resists |
US4608281A (en) * | 1982-09-28 | 1986-08-26 | Exxon Research And Engineering Co. | Improvements in sensitivity of a positive polymer resist having a glass transition temperature through control of a molecular weight distribution and prebaked temperature |
US4604305A (en) * | 1982-09-28 | 1986-08-05 | Exxon Research And Engineering Co. | Improvements in contrast of a positive polymer resist having a glass transition temperature through control of the molecular weight distribution and prebaked temperature |
US4540636A (en) * | 1983-12-27 | 1985-09-10 | General Motors Corporation | Metal bearing element with a score-resistant coating |
US4508812A (en) * | 1984-05-03 | 1985-04-02 | Hughes Aircraft Company | Method of applying poly(methacrylic anhydride resist to a semiconductor |
JPS6129839A (ja) * | 1984-07-23 | 1986-02-10 | Nippon Telegr & Teleph Corp <Ntt> | ポジ形レジスト組成物 |
JP2517707B2 (ja) * | 1985-03-04 | 1996-07-24 | ソニー株式会社 | フオトレジストパタ−ンの形成方法 |
JPS63502780A (ja) * | 1986-01-29 | 1988-10-13 | ヒユ−ズ・エアクラフト・カンパニ− | ポリ(メタクリル酸無水物)レジストの現像方法 |
JPS62187848A (ja) * | 1986-02-10 | 1987-08-17 | Fuotopori Ouka Kk | 感光性樹脂表面の粘着防止方法 |
JPS6330505A (ja) * | 1986-07-24 | 1988-02-09 | Mitsubishi Petrochem Co Ltd | 吸水性複合材料の製造法 |
US4835086A (en) * | 1988-02-12 | 1989-05-30 | Hoechst Celanese Corporation | Polysulfone barrier layer for bi-level photoresists |
US5006488A (en) * | 1989-10-06 | 1991-04-09 | International Business Machines Corporation | High temperature lift-off process |
JP4298414B2 (ja) * | 2002-07-10 | 2009-07-22 | キヤノン株式会社 | 液体吐出ヘッドの製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3706703A (en) * | 1966-10-25 | 1972-12-19 | Gulf Research Development Co | Process for the preparation of cyclic acid anhydrides |
US3594243A (en) * | 1967-02-07 | 1971-07-20 | Gen Aniline & Film Corp | Formation of polymeric resists |
US3914462A (en) * | 1971-06-04 | 1975-10-21 | Hitachi Ltd | Method for forming a resist mask using a positive electron resist |
US3935331A (en) * | 1975-01-09 | 1976-01-27 | Rca Corporation | Preparation of olefin SO2 copolymer electron beam resist films and use of same for recording |
US3984582A (en) * | 1975-06-30 | 1976-10-05 | Ibm | Method for preparing positive resist image |
-
1976
- 1976-12-20 US US05/752,949 patent/US4087569A/en not_active Expired - Lifetime
-
1977
- 1977-10-24 GB GB44193/77A patent/GB1539352A/en not_active Expired
- 1977-10-27 FR FR7733130A patent/FR2374668A1/fr active Granted
- 1977-11-01 JP JP13037777A patent/JPS5376826A/ja active Granted
- 1977-12-02 DE DE19772753658 patent/DE2753658A1/de not_active Withdrawn
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH031124Y2 (US07943777-20110517-C00090.png) * | 1985-12-20 | 1991-01-16 | ||
JPS62144102U (US07943777-20110517-C00090.png) * | 1986-03-04 | 1987-09-11 |
Also Published As
Publication number | Publication date |
---|---|
DE2753658A1 (de) | 1978-06-22 |
FR2374668A1 (fr) | 1978-07-13 |
US4087569A (en) | 1978-05-02 |
GB1539352A (en) | 1979-01-31 |
FR2374668B1 (US07943777-20110517-C00090.png) | 1980-08-08 |
JPS5376826A (en) | 1978-07-07 |