Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co LtdfiledCriticalToshiba Corp
Priority to JP11544276ApriorityCriticalpatent/JPS5341175A/en
Publication of JPS5341175ApublicationCriticalpatent/JPS5341175A/en
PURPOSE: To prevent the gap occurrence between a wafer and the temperature compensation plate by controlling the thickness of Al which is installed between Si wafer and the compensation plate to perform an alloy formation.
COPYRIGHT: (C)1978,JPO&Japio
JP11544276A1976-09-281976-09-28Manufacture of semiconductor device
PendingJPS5341175A
(en)