JPS5333072A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5333072A
JPS5333072A JP10807976A JP10807976A JPS5333072A JP S5333072 A JPS5333072 A JP S5333072A JP 10807976 A JP10807976 A JP 10807976A JP 10807976 A JP10807976 A JP 10807976A JP S5333072 A JPS5333072 A JP S5333072A
Authority
JP
Japan
Prior art keywords
semiconductor device
igfets
substances
sizes
loading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10807976A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6136388B2 (enrdf_load_stackoverflow
Inventor
Toshinori Otsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10807976A priority Critical patent/JPS5333072A/ja
Publication of JPS5333072A publication Critical patent/JPS5333072A/ja
Publication of JPS6136388B2 publication Critical patent/JPS6136388B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP10807976A 1976-09-09 1976-09-09 Semiconductor device Granted JPS5333072A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10807976A JPS5333072A (en) 1976-09-09 1976-09-09 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10807976A JPS5333072A (en) 1976-09-09 1976-09-09 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5333072A true JPS5333072A (en) 1978-03-28
JPS6136388B2 JPS6136388B2 (enrdf_load_stackoverflow) 1986-08-18

Family

ID=14475329

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10807976A Granted JPS5333072A (en) 1976-09-09 1976-09-09 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5333072A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5615074A (en) * 1979-07-19 1981-02-13 Pioneer Electronic Corp Semiconductor device
JPS56125854A (en) * 1980-03-10 1981-10-02 Nec Corp Integrated circuit
JPS6197861U (enrdf_load_stackoverflow) * 1984-12-03 1986-06-23

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5615074A (en) * 1979-07-19 1981-02-13 Pioneer Electronic Corp Semiconductor device
JPS56125854A (en) * 1980-03-10 1981-10-02 Nec Corp Integrated circuit
JPS6197861U (enrdf_load_stackoverflow) * 1984-12-03 1986-06-23

Also Published As

Publication number Publication date
JPS6136388B2 (enrdf_load_stackoverflow) 1986-08-18

Similar Documents

Publication Publication Date Title
DE3067661D1 (en) Interconnection device for integrated semiconductor circuits, and process for its manufacture
JPS51127682A (en) Manufacturing process of semiconductor device
JPS5333072A (en) Semiconductor device
JPS5324277A (en) Semiconductor devic e and its production
BE830286A (fr) Dispositif semi-conducteur avec des structures de transistor complementaires, et procede pour la fabrication de ce dispositif
JPS5365078A (en) Production of junction type field effect transistor
JPS51135383A (en) Semiconductor variable capacitance device
JPS5338275A (en) Semiconductor integrated circuit and its production
JPS5278382A (en) Semiconductor device
JPS5310982A (en) Production of mis semiconductor device
JPS51121272A (en) Manufacturing method for semiconductor devices
JPS5340272A (en) Apparatus for diffusing semiconductor substrate
JPS5215255A (en) Integrated semiconductor logical circuit
JPS5372470A (en) Semiconductor device
JPS5432086A (en) Semiconductor capacity element
JPS542657A (en) Manufacture for semiconductor device
JPS52135273A (en) Mos type semiconductor device
JPS5344181A (en) Production of semiconductor device
JPS52123179A (en) Mos type semiconductor device and its production
JPS52119802A (en) Semiconductor ic device
JPS52112754A (en) Mos transistor constant-voltage circuit
JPS5310286A (en) Production of semiconductor device
JPS5243386A (en) Silicon gate type mos integrated circuit device
JPS5339087A (en) Integrated circuit
JPS51148382A (en) Semiconductor device and the manufacturing method