JPS533164A - Method of making single crystal silicon carbide - Google Patents

Method of making single crystal silicon carbide

Info

Publication number
JPS533164A
JPS533164A JP6494777A JP6494777A JPS533164A JP S533164 A JPS533164 A JP S533164A JP 6494777 A JP6494777 A JP 6494777A JP 6494777 A JP6494777 A JP 6494777A JP S533164 A JPS533164 A JP S533164A
Authority
JP
Japan
Prior art keywords
single crystal
silicon carbide
crystal silicon
making single
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6494777A
Other languages
English (en)
Japanese (ja)
Inventor
Eru Deinzu Jiyon
Mei Kuu San
Aaru Poponiaku Mikaeru
Jiei Tsuan Pooru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS533164A publication Critical patent/JPS533164A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H10W10/012—
    • H10W10/13—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/96—Porous semiconductor

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
JP6494777A 1976-06-30 1977-06-03 Method of making single crystal silicon carbide Pending JPS533164A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/701,452 US4028149A (en) 1976-06-30 1976-06-30 Process for forming monocrystalline silicon carbide on silicon substrates

Publications (1)

Publication Number Publication Date
JPS533164A true JPS533164A (en) 1978-01-12

Family

ID=24817441

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6494777A Pending JPS533164A (en) 1976-06-30 1977-06-03 Method of making single crystal silicon carbide

Country Status (5)

Country Link
US (1) US4028149A (Direct)
JP (1) JPS533164A (Direct)
DE (1) DE2727557A1 (Direct)
FR (1) FR2357067A1 (Direct)
GB (1) GB1522293A (Direct)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54139801A (en) * 1978-04-24 1979-10-30 Obayashi Gumi Kk Groove and hole drilling method for rock
JPS60140756A (ja) * 1983-12-27 1985-07-25 Sharp Corp 炭化珪素バイポ−ラトランジスタの製造方法

Families Citing this family (55)

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US4123571A (en) * 1977-09-08 1978-10-31 International Business Machines Corporation Method for forming smooth self limiting and pin hole free SiC films on Si
US4180416A (en) * 1978-09-27 1979-12-25 International Business Machines Corporation Thermal migration-porous silicon technique for forming deep dielectric isolation
US4459181A (en) * 1982-09-23 1984-07-10 Eaton Corporation Semiconductor pattern definition by selective anodization
US4525429A (en) * 1983-06-08 1985-06-25 Kennecott Corporation Porous semiconductor dopant carriers
US4762806A (en) * 1983-12-23 1988-08-09 Sharp Kabushiki Kaisha Process for producing a SiC semiconductor device
US4524237A (en) * 1984-02-08 1985-06-18 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Increased voltage photovoltaic cell
JPS61291494A (ja) * 1985-06-19 1986-12-22 Sharp Corp 炭化珪素単結晶基板の製造方法
US4643804A (en) * 1985-07-25 1987-02-17 At&T Bell Laboratories Forming thick dielectric at the bottoms of trenches utilized in integrated-circuit devices
US4806996A (en) * 1986-04-10 1989-02-21 American Telephone And Telegraph Company, At&T Bell Laboratories Dislocation-free epitaxial layer on a lattice-mismatched porous or otherwise submicron patterned single crystal substrate
JPS63132452A (ja) * 1986-11-24 1988-06-04 Mitsubishi Electric Corp パタ−ン形成方法
US4972250A (en) * 1987-03-02 1990-11-20 Microwave Technology, Inc. Protective coating useful as passivation layer for semiconductor devices
US5087959A (en) * 1987-03-02 1992-02-11 Microwave Technology, Inc. Protective coating useful as a passivation layer for semiconductor devices
US5373171A (en) * 1987-03-12 1994-12-13 Sumitomo Electric Industries, Ltd. Thin film single crystal substrate
CA1313571C (en) * 1987-10-26 1993-02-09 John W. Palmour Metal oxide semiconductor field-effect transistor formed in silicon carbide
JPH067594B2 (ja) * 1987-11-20 1994-01-26 富士通株式会社 半導体基板の製造方法
US4982263A (en) * 1987-12-21 1991-01-01 Texas Instruments Incorporated Anodizable strain layer for SOI semiconductor structures
US5200805A (en) * 1987-12-28 1993-04-06 Hughes Aircraft Company Silicon carbide:metal carbide alloy semiconductor and method of making the same
US5082695A (en) * 1988-03-08 1992-01-21 501 Fujitsu Limited Method of fabricating an x-ray exposure mask
US5332697A (en) * 1989-05-31 1994-07-26 Smith Rosemary L Formation of silicon nitride by nitridation of porous silicon
US5156896A (en) * 1989-08-03 1992-10-20 Alps Electric Co., Ltd. Silicon substrate having porous oxidized silicon layers and its production method
EP0466109B1 (en) * 1990-07-10 1994-11-02 Sumitomo Metal Industries, Ltd. Process for producing a silicon carbide-base complex
DE4220472C2 (de) * 1992-03-05 2002-08-22 Industrieanlagen Betriebsges Verfahren zur Herstellung von Leichtbaureflektoren mittels Silicium-Wafern
US5565052A (en) * 1992-03-05 1996-10-15 Industrieanlagen-Betriebsgesellschaft Gmbh Method for the production of a reflector
US5298767A (en) * 1992-10-06 1994-03-29 Kulite Semiconductor Products, Inc. Porous silicon carbide (SiC) semiconductor device
US5494859A (en) * 1994-02-04 1996-02-27 Lsi Logic Corporation Low dielectric constant insulation layer for integrated circuit structure and method of making same
US5556530A (en) * 1995-06-05 1996-09-17 Walter J. Finklestein Flat panel display having improved electrode array
FR2748851B1 (fr) * 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
SE9602745D0 (sv) * 1996-07-11 1996-07-11 Abb Research Ltd A method for producing a channel region layer in a SiC-layer for a voltage controlled semiconductor device
JP3296998B2 (ja) * 1997-05-23 2002-07-02 日本ピラー工業株式会社 単結晶ＳｉＣおよびその製造方法
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
DE19838945A1 (de) * 1998-08-27 2000-03-09 Bosch Gmbh Robert Verfahren zur Herstellung einer defektarmen, einkristallinen Silizium-Carbid-Schicht
US6303508B1 (en) * 1999-12-16 2001-10-16 Philips Electronics North America Corporation Superior silicon carbide integrated circuits and method of fabricating
FR2811807B1 (fr) * 2000-07-12 2003-07-04 Commissariat Energie Atomique Procede de decoupage d'un bloc de materiau et de formation d'un film mince
FR2823599B1 (fr) 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
FR2830983B1 (fr) * 2001-10-11 2004-05-14 Commissariat Energie Atomique Procede de fabrication de couches minces contenant des microcomposants
FR2847075B1 (fr) * 2002-11-07 2005-02-18 Commissariat Energie Atomique Procede de formation d'une zone fragile dans un substrat par co-implantation
US7176108B2 (en) * 2002-11-07 2007-02-13 Soitec Silicon On Insulator Method of detaching a thin film at moderate temperature after co-implantation
FR2848336B1 (fr) * 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
GB0229212D0 (en) * 2002-12-14 2003-01-22 Koninkl Philips Electronics Nv Method of manufacture of a trench semiconductor device
FR2856844B1 (fr) * 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
US7772087B2 (en) * 2003-12-19 2010-08-10 Commissariat A L'energie Atomique Method of catastrophic transfer of a thin film after co-implantation
US7718469B2 (en) * 2004-03-05 2010-05-18 The University Of North Carolina At Charlotte Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys
US8378382B2 (en) * 2004-12-30 2013-02-19 Macronix International Co., Ltd. High aspect-ratio PN-junction and method for manufacturing the same
FR2886051B1 (fr) 2005-05-20 2007-08-10 Commissariat Energie Atomique Procede de detachement d'un film mince
DE102005024073A1 (de) * 2005-05-25 2006-11-30 Siltronic Ag Halbleiter-Schichtstruktur und Verfahren zur Herstellung einer Halbleiter-Schichtstruktur
FR2889887B1 (fr) * 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
FR2899378B1 (fr) * 2006-03-29 2008-06-27 Commissariat Energie Atomique Procede de detachement d'un film mince par fusion de precipites
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
FR2925221B1 (fr) * 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
US20160230570A1 (en) 2015-02-11 2016-08-11 Rolls-Royce High Temperature Composites Inc. Modified atmosphere melt infiltration
JP6572694B2 (ja) * 2015-09-11 2019-09-11 信越化学工業株式会社 ＳｉＣ複合基板の製造方法及び半導体基板の製造方法
DE102017112756A1 (de) 2017-06-09 2018-12-13 Psc Technologies Gmbh Verfahren zur Erzeugung von Schichten aus Siliciumcarbid

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GB1054518A (Direct) * 1964-12-05 1900-01-01
NL131898C (Direct) * 1965-03-26
NL6504325A (Direct) * 1965-04-05 1966-10-06
US3389022A (en) * 1965-09-17 1968-06-18 United Aircraft Corp Method for producing silicon carbide layers on silicon substrates
US3400309A (en) * 1965-10-18 1968-09-03 Ibm Monolithic silicon device containing dielectrically isolatng film of silicon carbide
GB1162565A (en) * 1967-04-07 1969-08-27 Ibm Uk Improvements in and relating to Semiconductor Structures
NL6813192A (Direct) * 1968-09-14 1970-03-17
US3640806A (en) * 1970-01-05 1972-02-08 Nippon Telegraph & Telephone Semiconductor device and method of producing the same
US3690969A (en) * 1971-05-03 1972-09-12 Motorola Inc Method of doping semiconductor substrates
US3919060A (en) * 1974-06-14 1975-11-11 Ibm Method of fabricating semiconductor device embodying dielectric isolation
US3929529A (en) * 1974-12-09 1975-12-30 Ibm Method for gettering contaminants in monocrystalline silicon
US3954523A (en) * 1975-04-14 1976-05-04 International Business Machines Corporation Process for fabricating devices having dielectric isolation utilizing anodic treatment and selective oxidation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54139801A (en) * 1978-04-24 1979-10-30 Obayashi Gumi Kk Groove and hole drilling method for rock
JPS60140756A (ja) * 1983-12-27 1985-07-25 Sharp Corp 炭化珪素バイポ−ラトランジスタの製造方法

Also Published As

Publication number Publication date
GB1522293A (en) 1978-08-23
FR2357067B1 (Direct) 1980-05-09
DE2727557A1 (de) 1978-01-12
US4028149A (en) 1977-06-07
FR2357067A1 (fr) 1978-01-27

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