JPS533164A - Method of making single crystal silicon carbide - Google Patents
Method of making single crystal silicon carbideInfo
- Publication number
- JPS533164A JPS533164A JP6494777A JP6494777A JPS533164A JP S533164 A JPS533164 A JP S533164A JP 6494777 A JP6494777 A JP 6494777A JP 6494777 A JP6494777 A JP 6494777A JP S533164 A JPS533164 A JP S533164A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- silicon carbide
- crystal silicon
- making single
- making
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/117—Oxidation, selective
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/148—Silicon carbide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/96—Porous semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/701,452 US4028149A (en) | 1976-06-30 | 1976-06-30 | Process for forming monocrystalline silicon carbide on silicon substrates |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS533164A true JPS533164A (en) | 1978-01-12 |
Family
ID=24817441
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6494777A Pending JPS533164A (en) | 1976-06-30 | 1977-06-03 | Method of making single crystal silicon carbide |
Country Status (5)
Country | Link |
---|---|
US (1) | US4028149A (ja) |
JP (1) | JPS533164A (ja) |
DE (1) | DE2727557A1 (ja) |
FR (1) | FR2357067A1 (ja) |
GB (1) | GB1522293A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54139801A (en) * | 1978-04-24 | 1979-10-30 | Obayashi Gumi Kk | Groove and hole drilling method for rock |
JPS60140756A (ja) * | 1983-12-27 | 1985-07-25 | Sharp Corp | 炭化珪素バイポ−ラトランジスタの製造方法 |
Families Citing this family (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4123571A (en) * | 1977-09-08 | 1978-10-31 | International Business Machines Corporation | Method for forming smooth self limiting and pin hole free SiC films on Si |
US4180416A (en) * | 1978-09-27 | 1979-12-25 | International Business Machines Corporation | Thermal migration-porous silicon technique for forming deep dielectric isolation |
US4459181A (en) * | 1982-09-23 | 1984-07-10 | Eaton Corporation | Semiconductor pattern definition by selective anodization |
US4525429A (en) * | 1983-06-08 | 1985-06-25 | Kennecott Corporation | Porous semiconductor dopant carriers |
US4762806A (en) * | 1983-12-23 | 1988-08-09 | Sharp Kabushiki Kaisha | Process for producing a SiC semiconductor device |
US4524237A (en) * | 1984-02-08 | 1985-06-18 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Increased voltage photovoltaic cell |
JPS61291494A (ja) * | 1985-06-19 | 1986-12-22 | Sharp Corp | 炭化珪素単結晶基板の製造方法 |
US4643804A (en) * | 1985-07-25 | 1987-02-17 | At&T Bell Laboratories | Forming thick dielectric at the bottoms of trenches utilized in integrated-circuit devices |
US4806996A (en) * | 1986-04-10 | 1989-02-21 | American Telephone And Telegraph Company, At&T Bell Laboratories | Dislocation-free epitaxial layer on a lattice-mismatched porous or otherwise submicron patterned single crystal substrate |
JPS63132452A (ja) * | 1986-11-24 | 1988-06-04 | Mitsubishi Electric Corp | パタ−ン形成方法 |
US5087959A (en) * | 1987-03-02 | 1992-02-11 | Microwave Technology, Inc. | Protective coating useful as a passivation layer for semiconductor devices |
US4972250A (en) * | 1987-03-02 | 1990-11-20 | Microwave Technology, Inc. | Protective coating useful as passivation layer for semiconductor devices |
US5373171A (en) * | 1987-03-12 | 1994-12-13 | Sumitomo Electric Industries, Ltd. | Thin film single crystal substrate |
CA1313571C (en) * | 1987-10-26 | 1993-02-09 | John W. Palmour | Metal oxide semiconductor field-effect transistor formed in silicon carbide |
JPH067594B2 (ja) * | 1987-11-20 | 1994-01-26 | 富士通株式会社 | 半導体基板の製造方法 |
US4982263A (en) * | 1987-12-21 | 1991-01-01 | Texas Instruments Incorporated | Anodizable strain layer for SOI semiconductor structures |
US5200805A (en) * | 1987-12-28 | 1993-04-06 | Hughes Aircraft Company | Silicon carbide:metal carbide alloy semiconductor and method of making the same |
US5082695A (en) * | 1988-03-08 | 1992-01-21 | 501 Fujitsu Limited | Method of fabricating an x-ray exposure mask |
US5332697A (en) * | 1989-05-31 | 1994-07-26 | Smith Rosemary L | Formation of silicon nitride by nitridation of porous silicon |
US5156896A (en) * | 1989-08-03 | 1992-10-20 | Alps Electric Co., Ltd. | Silicon substrate having porous oxidized silicon layers and its production method |
EP0466109B1 (en) * | 1990-07-10 | 1994-11-02 | Sumitomo Metal Industries, Ltd. | Process for producing a silicon carbide-base complex |
DE4220472C2 (de) * | 1992-03-05 | 2002-08-22 | Industrieanlagen Betriebsges | Verfahren zur Herstellung von Leichtbaureflektoren mittels Silicium-Wafern |
US5565052A (en) * | 1992-03-05 | 1996-10-15 | Industrieanlagen-Betriebsgesellschaft Gmbh | Method for the production of a reflector |
US5298767A (en) * | 1992-10-06 | 1994-03-29 | Kulite Semiconductor Products, Inc. | Porous silicon carbide (SiC) semiconductor device |
US5494859A (en) * | 1994-02-04 | 1996-02-27 | Lsi Logic Corporation | Low dielectric constant insulation layer for integrated circuit structure and method of making same |
US5556530A (en) * | 1995-06-05 | 1996-09-17 | Walter J. Finklestein | Flat panel display having improved electrode array |
FR2748851B1 (fr) * | 1996-05-15 | 1998-08-07 | Commissariat Energie Atomique | Procede de realisation d'une couche mince de materiau semiconducteur |
SE9602745D0 (sv) * | 1996-07-11 | 1996-07-11 | Abb Research Ltd | A method for producing a channel region layer in a SiC-layer for a voltage controlled semiconductor device |
FR2773261B1 (fr) * | 1997-12-30 | 2000-01-28 | Commissariat Energie Atomique | Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions |
DE19838945A1 (de) * | 1998-08-27 | 2000-03-09 | Bosch Gmbh Robert | Verfahren zur Herstellung einer defektarmen, einkristallinen Silizium-Carbid-Schicht |
US6303508B1 (en) * | 1999-12-16 | 2001-10-16 | Philips Electronics North America Corporation | Superior silicon carbide integrated circuits and method of fabricating |
FR2811807B1 (fr) * | 2000-07-12 | 2003-07-04 | Commissariat Energie Atomique | Procede de decoupage d'un bloc de materiau et de formation d'un film mince |
FR2823599B1 (fr) | 2001-04-13 | 2004-12-17 | Commissariat Energie Atomique | Substrat demomtable a tenue mecanique controlee et procede de realisation |
FR2830983B1 (fr) * | 2001-10-11 | 2004-05-14 | Commissariat Energie Atomique | Procede de fabrication de couches minces contenant des microcomposants |
FR2847075B1 (fr) * | 2002-11-07 | 2005-02-18 | Commissariat Energie Atomique | Procede de formation d'une zone fragile dans un substrat par co-implantation |
US7176108B2 (en) * | 2002-11-07 | 2007-02-13 | Soitec Silicon On Insulator | Method of detaching a thin film at moderate temperature after co-implantation |
FR2848336B1 (fr) * | 2002-12-09 | 2005-10-28 | Commissariat Energie Atomique | Procede de realisation d'une structure contrainte destinee a etre dissociee |
GB0229212D0 (en) * | 2002-12-14 | 2003-01-22 | Koninkl Philips Electronics Nv | Method of manufacture of a trench semiconductor device |
FR2856844B1 (fr) * | 2003-06-24 | 2006-02-17 | Commissariat Energie Atomique | Circuit integre sur puce de hautes performances |
FR2857953B1 (fr) | 2003-07-21 | 2006-01-13 | Commissariat Energie Atomique | Structure empilee, et procede pour la fabriquer |
FR2861497B1 (fr) | 2003-10-28 | 2006-02-10 | Soitec Silicon On Insulator | Procede de transfert catastrophique d'une couche fine apres co-implantation |
US7772087B2 (en) * | 2003-12-19 | 2010-08-10 | Commissariat A L'energie Atomique | Method of catastrophic transfer of a thin film after co-implantation |
WO2005087983A2 (en) * | 2004-03-05 | 2005-09-22 | University Of North Carolina At Charlotte | Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys |
US8378382B2 (en) * | 2004-12-30 | 2013-02-19 | Macronix International Co., Ltd. | High aspect-ratio PN-junction and method for manufacturing the same |
FR2886051B1 (fr) | 2005-05-20 | 2007-08-10 | Commissariat Energie Atomique | Procede de detachement d'un film mince |
DE102005024073A1 (de) * | 2005-05-25 | 2006-11-30 | Siltronic Ag | Halbleiter-Schichtstruktur und Verfahren zur Herstellung einer Halbleiter-Schichtstruktur |
FR2889887B1 (fr) * | 2005-08-16 | 2007-11-09 | Commissariat Energie Atomique | Procede de report d'une couche mince sur un support |
FR2899378B1 (fr) * | 2006-03-29 | 2008-06-27 | Commissariat Energie Atomique | Procede de detachement d'un film mince par fusion de precipites |
FR2910179B1 (fr) | 2006-12-19 | 2009-03-13 | Commissariat Energie Atomique | PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART |
FR2925221B1 (fr) * | 2007-12-17 | 2010-02-19 | Commissariat Energie Atomique | Procede de transfert d'une couche mince |
FR2947098A1 (fr) | 2009-06-18 | 2010-12-24 | Commissariat Energie Atomique | Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince |
US20160230570A1 (en) | 2015-02-11 | 2016-08-11 | Rolls-Royce High Temperature Composites Inc. | Modified atmosphere melt infiltration |
JP6572694B2 (ja) * | 2015-09-11 | 2019-09-11 | 信越化学工業株式会社 | SiC複合基板の製造方法及び半導体基板の製造方法 |
DE102017112756A1 (de) | 2017-06-09 | 2018-12-13 | Psc Technologies Gmbh | Verfahren zur Erzeugung von Schichten aus Siliciumcarbid |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1054518A (ja) * | 1964-12-05 | 1900-01-01 | ||
NL131898C (ja) * | 1965-03-26 | |||
NL6504325A (ja) * | 1965-04-05 | 1966-10-06 | ||
US3389022A (en) * | 1965-09-17 | 1968-06-18 | United Aircraft Corp | Method for producing silicon carbide layers on silicon substrates |
US3400309A (en) * | 1965-10-18 | 1968-09-03 | Ibm | Monolithic silicon device containing dielectrically isolatng film of silicon carbide |
GB1162565A (en) * | 1967-04-07 | 1969-08-27 | Ibm Uk | Improvements in and relating to Semiconductor Structures |
NL6813192A (ja) * | 1968-09-14 | 1970-03-17 | ||
US3640806A (en) * | 1970-01-05 | 1972-02-08 | Nippon Telegraph & Telephone | Semiconductor device and method of producing the same |
US3690969A (en) * | 1971-05-03 | 1972-09-12 | Motorola Inc | Method of doping semiconductor substrates |
US3919060A (en) * | 1974-06-14 | 1975-11-11 | Ibm | Method of fabricating semiconductor device embodying dielectric isolation |
US3929529A (en) * | 1974-12-09 | 1975-12-30 | Ibm | Method for gettering contaminants in monocrystalline silicon |
US3954523A (en) * | 1975-04-14 | 1976-05-04 | International Business Machines Corporation | Process for fabricating devices having dielectric isolation utilizing anodic treatment and selective oxidation |
-
1976
- 1976-06-30 US US05/701,452 patent/US4028149A/en not_active Expired - Lifetime
-
1977
- 1977-05-18 FR FR7716061A patent/FR2357067A1/fr active Granted
- 1977-06-03 JP JP6494777A patent/JPS533164A/ja active Pending
- 1977-06-15 GB GB25025/77A patent/GB1522293A/en not_active Expired
- 1977-06-18 DE DE19772727557 patent/DE2727557A1/de not_active Withdrawn
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54139801A (en) * | 1978-04-24 | 1979-10-30 | Obayashi Gumi Kk | Groove and hole drilling method for rock |
JPS5953999B2 (ja) * | 1978-04-24 | 1984-12-27 | 株式会社大林組 | 岩盤用溝孔掘削方法 |
JPS60140756A (ja) * | 1983-12-27 | 1985-07-25 | Sharp Corp | 炭化珪素バイポ−ラトランジスタの製造方法 |
JPH0458691B2 (ja) * | 1983-12-27 | 1992-09-18 | Sharp Kk |
Also Published As
Publication number | Publication date |
---|---|
FR2357067B1 (ja) | 1980-05-09 |
GB1522293A (en) | 1978-08-23 |
DE2727557A1 (de) | 1978-01-12 |
US4028149A (en) | 1977-06-07 |
FR2357067A1 (fr) | 1978-01-27 |
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