JPS5329670A - Thermal oxidation method of semiconductors - Google Patents

Thermal oxidation method of semiconductors

Info

Publication number
JPS5329670A
JPS5329670A JP10458676A JP10458676A JPS5329670A JP S5329670 A JPS5329670 A JP S5329670A JP 10458676 A JP10458676 A JP 10458676A JP 10458676 A JP10458676 A JP 10458676A JP S5329670 A JPS5329670 A JP S5329670A
Authority
JP
Japan
Prior art keywords
semiconductors
thermal oxidation
oxidation method
oxidizing agent
letting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10458676A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5625020B2 (en:Method
Inventor
Sokichi Yamagishi
Kenji Atsumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10458676A priority Critical patent/JPS5329670A/ja
Publication of JPS5329670A publication Critical patent/JPS5329670A/ja
Publication of JPS5625020B2 publication Critical patent/JPS5625020B2/ja
Granted legal-status Critical Current

Links

JP10458676A 1976-08-31 1976-08-31 Thermal oxidation method of semiconductors Granted JPS5329670A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10458676A JPS5329670A (en) 1976-08-31 1976-08-31 Thermal oxidation method of semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10458676A JPS5329670A (en) 1976-08-31 1976-08-31 Thermal oxidation method of semiconductors

Publications (2)

Publication Number Publication Date
JPS5329670A true JPS5329670A (en) 1978-03-20
JPS5625020B2 JPS5625020B2 (en:Method) 1981-06-10

Family

ID=14384530

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10458676A Granted JPS5329670A (en) 1976-08-31 1976-08-31 Thermal oxidation method of semiconductors

Country Status (1)

Country Link
JP (1) JPS5329670A (en:Method)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5662326A (en) * 1979-10-26 1981-05-28 Hitachi Ltd Heat-treatment process
JPS5728509U (en:Method) * 1980-07-25 1982-02-15
JPS57201030A (en) * 1981-06-05 1982-12-09 Oki Electric Ind Co Ltd Heat treatment for semiconductor wafer

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5818025U (ja) * 1981-07-30 1983-02-03 三菱重工業株式会社 渦流室式デイ−ゼル機関
CN102751217A (zh) * 2012-07-04 2012-10-24 上海宏力半导体制造有限公司 温度缓冲装置及炉管系统

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5662326A (en) * 1979-10-26 1981-05-28 Hitachi Ltd Heat-treatment process
JPS5728509U (en:Method) * 1980-07-25 1982-02-15
JPS57201030A (en) * 1981-06-05 1982-12-09 Oki Electric Ind Co Ltd Heat treatment for semiconductor wafer

Also Published As

Publication number Publication date
JPS5625020B2 (en:Method) 1981-06-10

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