JPS5625020B2 - - Google Patents
Info
- Publication number
- JPS5625020B2 JPS5625020B2 JP10458676A JP10458676A JPS5625020B2 JP S5625020 B2 JPS5625020 B2 JP S5625020B2 JP 10458676 A JP10458676 A JP 10458676A JP 10458676 A JP10458676 A JP 10458676A JP S5625020 B2 JPS5625020 B2 JP S5625020B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10458676A JPS5329670A (en) | 1976-08-31 | 1976-08-31 | Thermal oxidation method of semiconductors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10458676A JPS5329670A (en) | 1976-08-31 | 1976-08-31 | Thermal oxidation method of semiconductors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5329670A JPS5329670A (en) | 1978-03-20 |
| JPS5625020B2 true JPS5625020B2 (en:Method) | 1981-06-10 |
Family
ID=14384530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10458676A Granted JPS5329670A (en) | 1976-08-31 | 1976-08-31 | Thermal oxidation method of semiconductors |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5329670A (en:Method) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5818025U (ja) * | 1981-07-30 | 1983-02-03 | 三菱重工業株式会社 | 渦流室式デイ−ゼル機関 |
| CN102751217A (zh) * | 2012-07-04 | 2012-10-24 | 上海宏力半导体制造有限公司 | 温度缓冲装置及炉管系统 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5662326A (en) * | 1979-10-26 | 1981-05-28 | Hitachi Ltd | Heat-treatment process |
| JPS5728509U (en:Method) * | 1980-07-25 | 1982-02-15 | ||
| JPS57201030A (en) * | 1981-06-05 | 1982-12-09 | Oki Electric Ind Co Ltd | Heat treatment for semiconductor wafer |
-
1976
- 1976-08-31 JP JP10458676A patent/JPS5329670A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5818025U (ja) * | 1981-07-30 | 1983-02-03 | 三菱重工業株式会社 | 渦流室式デイ−ゼル機関 |
| CN102751217A (zh) * | 2012-07-04 | 2012-10-24 | 上海宏力半导体制造有限公司 | 温度缓冲装置及炉管系统 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5329670A (en) | 1978-03-20 |