JPS5662326A - Heat-treatment process - Google Patents

Heat-treatment process

Info

Publication number
JPS5662326A
JPS5662326A JP13765279A JP13765279A JPS5662326A JP S5662326 A JPS5662326 A JP S5662326A JP 13765279 A JP13765279 A JP 13765279A JP 13765279 A JP13765279 A JP 13765279A JP S5662326 A JPS5662326 A JP S5662326A
Authority
JP
Japan
Prior art keywords
work
jig
heat
wafer
treatment process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13765279A
Other languages
Japanese (ja)
Inventor
Noboru Tatefuru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13765279A priority Critical patent/JPS5662326A/en
Publication of JPS5662326A publication Critical patent/JPS5662326A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Abstract

PURPOSE:To eliminate oxidation and unstable dispersion, when heating a work at a prescribed temperature and making it react by jetting gas from one side of a furnace, by providing a buffer between the work and gas combustion flame. CONSTITUTION:A H2 combustion flame alleviating jig 7 is provided between an H2 combustion unit 6 and a wafer jig 1. The jig 7 is formed by quarts or opaque quartz, etc. enclosing Si, SiC, ceramic and glass wool, etc. which are similar in shape to the wafer 2 which is a work to be heat-treated.
JP13765279A 1979-10-26 1979-10-26 Heat-treatment process Pending JPS5662326A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13765279A JPS5662326A (en) 1979-10-26 1979-10-26 Heat-treatment process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13765279A JPS5662326A (en) 1979-10-26 1979-10-26 Heat-treatment process

Publications (1)

Publication Number Publication Date
JPS5662326A true JPS5662326A (en) 1981-05-28

Family

ID=15203640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13765279A Pending JPS5662326A (en) 1979-10-26 1979-10-26 Heat-treatment process

Country Status (1)

Country Link
JP (1) JPS5662326A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58116737A (en) * 1981-12-30 1983-07-12 Oki Electric Ind Co Ltd Semiconductor wafer thermal processing apparatus
US5445522A (en) * 1993-04-26 1995-08-29 Tokyo Electron Kabushiki Kaisha Combustion device
KR100604661B1 (en) 2004-07-27 2006-07-25 주식회사 하이닉스반도체 Develop rinse nozzle provided with alleviation wall

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5329670A (en) * 1976-08-31 1978-03-20 Nec Corp Thermal oxidation method of semiconductors

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5329670A (en) * 1976-08-31 1978-03-20 Nec Corp Thermal oxidation method of semiconductors

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58116737A (en) * 1981-12-30 1983-07-12 Oki Electric Ind Co Ltd Semiconductor wafer thermal processing apparatus
US5445522A (en) * 1993-04-26 1995-08-29 Tokyo Electron Kabushiki Kaisha Combustion device
KR100604661B1 (en) 2004-07-27 2006-07-25 주식회사 하이닉스반도체 Develop rinse nozzle provided with alleviation wall

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