JPS5329572B2 - - Google Patents
Info
- Publication number
- JPS5329572B2 JPS5329572B2 JP1777675A JP1777675A JPS5329572B2 JP S5329572 B2 JPS5329572 B2 JP S5329572B2 JP 1777675 A JP1777675 A JP 1777675A JP 1777675 A JP1777675 A JP 1777675A JP S5329572 B2 JPS5329572 B2 JP S5329572B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/20—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices for inducing a nuclear reaction transmuting chemical elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K5/00—Irradiation devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
- H10D62/405—Orientations of crystalline planes
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2407697A DE2407697C3 (de) | 1974-02-18 | 1974-02-18 | Verfahren zum Herstellen eines homogen Ga-dotierten Siliciumeinkristalls |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS50120253A JPS50120253A (cg-RX-API-DMAC7.html) | 1975-09-20 |
| JPS5329572B2 true JPS5329572B2 (cg-RX-API-DMAC7.html) | 1978-08-22 |
Family
ID=5907718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1777675A Expired JPS5329572B2 (cg-RX-API-DMAC7.html) | 1974-02-18 | 1975-02-12 |
Country Status (12)
| Country | Link |
|---|---|
| JP (1) | JPS5329572B2 (cg-RX-API-DMAC7.html) |
| AT (1) | AT339379B (cg-RX-API-DMAC7.html) |
| BE (1) | BE816719A (cg-RX-API-DMAC7.html) |
| DE (1) | DE2407697C3 (cg-RX-API-DMAC7.html) |
| DK (1) | DK658274A (cg-RX-API-DMAC7.html) |
| FR (1) | FR2261055B1 (cg-RX-API-DMAC7.html) |
| GB (1) | GB1442930A (cg-RX-API-DMAC7.html) |
| IT (1) | IT1031627B (cg-RX-API-DMAC7.html) |
| NL (1) | NL7410745A (cg-RX-API-DMAC7.html) |
| PL (1) | PL91842B1 (cg-RX-API-DMAC7.html) |
| SU (1) | SU717999A3 (cg-RX-API-DMAC7.html) |
| ZA (1) | ZA746269B (cg-RX-API-DMAC7.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9799736B1 (en) | 2016-07-20 | 2017-10-24 | International Business Machines Corporation | High acceptor level doping in silicon germanium |
-
1974
- 1974-02-18 DE DE2407697A patent/DE2407697C3/de not_active Expired
- 1974-06-21 BE BE145761A patent/BE816719A/xx unknown
- 1974-08-09 NL NL7410745A patent/NL7410745A/xx not_active Application Discontinuation
- 1974-08-14 AT AT667874A patent/AT339379B/de active
- 1974-09-11 GB GB3955974A patent/GB1442930A/en not_active Expired
- 1974-09-25 PL PL1974174329A patent/PL91842B1/pl unknown
- 1974-10-02 ZA ZA00746269A patent/ZA746269B/xx unknown
- 1974-12-17 DK DK658274A patent/DK658274A/da unknown
-
1975
- 1975-02-11 IT IT20138/75A patent/IT1031627B/it active
- 1975-02-12 JP JP1777675A patent/JPS5329572B2/ja not_active Expired
- 1975-02-17 SU SU752106377A patent/SU717999A3/ru active
- 1975-02-17 FR FR7504804A patent/FR2261055B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2261055B1 (cg-RX-API-DMAC7.html) | 1979-01-05 |
| NL7410745A (nl) | 1975-08-20 |
| ZA746269B (en) | 1975-10-29 |
| GB1442930A (en) | 1976-07-14 |
| DE2407697B2 (de) | 1978-04-06 |
| AT339379B (de) | 1977-10-10 |
| SU717999A3 (ru) | 1980-02-25 |
| PL91842B1 (cg-RX-API-DMAC7.html) | 1977-03-31 |
| DE2407697C3 (de) | 1978-11-30 |
| DE2407697A1 (de) | 1975-09-18 |
| BE816719A (fr) | 1974-10-16 |
| DK658274A (cg-RX-API-DMAC7.html) | 1975-10-27 |
| IT1031627B (it) | 1979-05-10 |
| FR2261055A1 (cg-RX-API-DMAC7.html) | 1975-09-12 |
| ATA667874A (de) | 1977-02-15 |
| JPS50120253A (cg-RX-API-DMAC7.html) | 1975-09-20 |