JPS5326584A - Prod uction of mis semiconductor device - Google Patents
Prod uction of mis semiconductor deviceInfo
- Publication number
- JPS5326584A JPS5326584A JP10057076A JP10057076A JPS5326584A JP S5326584 A JPS5326584 A JP S5326584A JP 10057076 A JP10057076 A JP 10057076A JP 10057076 A JP10057076 A JP 10057076A JP S5326584 A JPS5326584 A JP S5326584A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- mis semiconductor
- prod uction
- uction
- prod
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: A source and a drain layers are formed by the self-alignment system, and contact holes are provided on the side wall face of layers. Then, the hoel aprt is made as small as possible to miniaturize an element, thereby increasing an integration degree.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10057076A JPS5326584A (en) | 1976-08-25 | 1976-08-25 | Prod uction of mis semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10057076A JPS5326584A (en) | 1976-08-25 | 1976-08-25 | Prod uction of mis semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5326584A true JPS5326584A (en) | 1978-03-11 |
Family
ID=14277556
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10057076A Pending JPS5326584A (en) | 1976-08-25 | 1976-08-25 | Prod uction of mis semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5326584A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4533934A (en) * | 1980-10-02 | 1985-08-06 | Westinghouse Electric Corp. | Device structures for high density integrated circuits |
US5270567A (en) * | 1989-09-06 | 1993-12-14 | Casio Computer Co., Ltd. | Thin film transistors without capacitances between electrodes thereof |
US5470762A (en) * | 1991-11-29 | 1995-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a thin film transistor |
US5663077A (en) * | 1993-07-27 | 1997-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films |
US6329229B1 (en) | 1993-11-05 | 2001-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for processing semiconductor device, apparatus for processing a semiconductor and apparatus for processing semiconductor device |
US6897100B2 (en) | 1993-11-05 | 2005-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device |
US7692223B2 (en) | 2006-04-28 | 2010-04-06 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and method for manufacturing the same |
-
1976
- 1976-08-25 JP JP10057076A patent/JPS5326584A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4533934A (en) * | 1980-10-02 | 1985-08-06 | Westinghouse Electric Corp. | Device structures for high density integrated circuits |
US5270567A (en) * | 1989-09-06 | 1993-12-14 | Casio Computer Co., Ltd. | Thin film transistors without capacitances between electrodes thereof |
US5470762A (en) * | 1991-11-29 | 1995-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a thin film transistor |
US5757030A (en) * | 1991-11-29 | 1998-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with an insulating film having an increased thickness on a periphery of a semiconductor island |
US5663077A (en) * | 1993-07-27 | 1997-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films |
US5966594A (en) * | 1993-07-27 | 1999-10-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US6465284B2 (en) | 1993-07-27 | 2002-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US6329229B1 (en) | 1993-11-05 | 2001-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for processing semiconductor device, apparatus for processing a semiconductor and apparatus for processing semiconductor device |
US6897100B2 (en) | 1993-11-05 | 2005-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device |
US7692223B2 (en) | 2006-04-28 | 2010-04-06 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and method for manufacturing the same |
US8896049B2 (en) | 2006-04-28 | 2014-11-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
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