JPS5326584A - Prod uction of mis semiconductor device - Google Patents

Prod uction of mis semiconductor device

Info

Publication number
JPS5326584A
JPS5326584A JP10057076A JP10057076A JPS5326584A JP S5326584 A JPS5326584 A JP S5326584A JP 10057076 A JP10057076 A JP 10057076A JP 10057076 A JP10057076 A JP 10057076A JP S5326584 A JPS5326584 A JP S5326584A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
semiconductor device
mis semiconductor
prod uction
layers
uction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10057076A
Inventor
Seiichi Iwamatsu
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: A source and a drain layers are formed by the self-alignment system, and contact holes are provided on the side wall face of layers. Then, the hoel aprt is made as small as possible to miniaturize an element, thereby increasing an integration degree.
COPYRIGHT: (C)1978,JPO&Japio
JP10057076A 1976-08-25 1976-08-25 Prod uction of mis semiconductor device Pending JPS5326584A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10057076A JPS5326584A (en) 1976-08-25 1976-08-25 Prod uction of mis semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10057076A JPS5326584A (en) 1976-08-25 1976-08-25 Prod uction of mis semiconductor device

Publications (1)

Publication Number Publication Date
JPS5326584A true true JPS5326584A (en) 1978-03-11

Family

ID=14277556

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10057076A Pending JPS5326584A (en) 1976-08-25 1976-08-25 Prod uction of mis semiconductor device

Country Status (1)

Country Link
JP (1) JPS5326584A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4533934A (en) * 1980-10-02 1985-08-06 Westinghouse Electric Corp. Device structures for high density integrated circuits
US5270567A (en) * 1989-09-06 1993-12-14 Casio Computer Co., Ltd. Thin film transistors without capacitances between electrodes thereof
US5470762A (en) * 1991-11-29 1995-11-28 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
US5663077A (en) * 1993-07-27 1997-09-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films
US6329229B1 (en) 1993-11-05 2001-12-11 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device, apparatus for processing a semiconductor and apparatus for processing semiconductor device
US6897100B2 (en) 1993-11-05 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
US7692223B2 (en) 2006-04-28 2010-04-06 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and method for manufacturing the same

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4533934A (en) * 1980-10-02 1985-08-06 Westinghouse Electric Corp. Device structures for high density integrated circuits
US5270567A (en) * 1989-09-06 1993-12-14 Casio Computer Co., Ltd. Thin film transistors without capacitances between electrodes thereof
US5470762A (en) * 1991-11-29 1995-11-28 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
US5757030A (en) * 1991-11-29 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with an insulating film having an increased thickness on a periphery of a semiconductor island
US5663077A (en) * 1993-07-27 1997-09-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films
US5966594A (en) * 1993-07-27 1999-10-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6465284B2 (en) 1993-07-27 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6329229B1 (en) 1993-11-05 2001-12-11 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device, apparatus for processing a semiconductor and apparatus for processing semiconductor device
US6897100B2 (en) 1993-11-05 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
US7692223B2 (en) 2006-04-28 2010-04-06 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and method for manufacturing the same
US8896049B2 (en) 2006-04-28 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

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