Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
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Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co LtdfiledCriticalNEC Corp
Priority to JP9384276ApriorityCriticalpatent/JPS5318956A/en
Publication of JPS5318956ApublicationCriticalpatent/JPS5318956A/en
PURPOSE: To obtain a beam lead type semiconductor device with an external size reproduced from the substrate as designed, by utilizing the high etching rate of laser energy to crystal distortion layer without thinning the substrate by lapping.
COPYRIGHT: (C)1978,JPO&Japio
JP9384276A1976-08-051976-08-05Preparation of beam lead type semiconductor device
PendingJPS5318956A
(en)