JPS53145577A - Production of semiconductor rectifier - Google Patents
Production of semiconductor rectifierInfo
- Publication number
- JPS53145577A JPS53145577A JP5982177A JP5982177A JPS53145577A JP S53145577 A JPS53145577 A JP S53145577A JP 5982177 A JP5982177 A JP 5982177A JP 5982177 A JP5982177 A JP 5982177A JP S53145577 A JPS53145577 A JP S53145577A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor rectifier
- diode
- layer
- impruity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 229910000679 solder Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/411—PN diodes having planar bodies
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5982177A JPS53145577A (en) | 1977-05-25 | 1977-05-25 | Production of semiconductor rectifier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5982177A JPS53145577A (en) | 1977-05-25 | 1977-05-25 | Production of semiconductor rectifier |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53145577A true JPS53145577A (en) | 1978-12-18 |
JPS576272B2 JPS576272B2 (enrdf_load_stackoverflow) | 1982-02-04 |
Family
ID=13124263
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5982177A Granted JPS53145577A (en) | 1977-05-25 | 1977-05-25 | Production of semiconductor rectifier |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53145577A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6420648A (en) * | 1987-07-15 | 1989-01-24 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPH01501030A (ja) * | 1986-09-30 | 1989-04-06 | オイペック・オイロペーイッシェ・ゲゼルシャフト・フュール・ライスツングスハルプライター・エムベーハー・ウント・コンパニイ・コマンディートゲゼルシャフト | アノード側p領域と、隣接する低ドーピングされたnベース領域とを有する半導体構成素子 |
JPH01259570A (ja) * | 1988-04-11 | 1989-10-17 | Toshiba Corp | 半導体装置及びその製造方法 |
US5356830A (en) * | 1988-09-19 | 1994-10-18 | Kabushiki Kaisha Tobshiba | Semiconductor device and its manufacturing method |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6219818U (enrdf_load_stackoverflow) * | 1985-07-22 | 1987-02-05 |
-
1977
- 1977-05-25 JP JP5982177A patent/JPS53145577A/ja active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01501030A (ja) * | 1986-09-30 | 1989-04-06 | オイペック・オイロペーイッシェ・ゲゼルシャフト・フュール・ライスツングスハルプライター・エムベーハー・ウント・コンパニイ・コマンディートゲゼルシャフト | アノード側p領域と、隣接する低ドーピングされたnベース領域とを有する半導体構成素子 |
JPS6420648A (en) * | 1987-07-15 | 1989-01-24 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPH01259570A (ja) * | 1988-04-11 | 1989-10-17 | Toshiba Corp | 半導体装置及びその製造方法 |
US5356830A (en) * | 1988-09-19 | 1994-10-18 | Kabushiki Kaisha Tobshiba | Semiconductor device and its manufacturing method |
Also Published As
Publication number | Publication date |
---|---|
JPS576272B2 (enrdf_load_stackoverflow) | 1982-02-04 |
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