JPS53136972A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS53136972A
JPS53136972A JP5141677A JP5141677A JPS53136972A JP S53136972 A JPS53136972 A JP S53136972A JP 5141677 A JP5141677 A JP 5141677A JP 5141677 A JP5141677 A JP 5141677A JP S53136972 A JPS53136972 A JP S53136972A
Authority
JP
Japan
Prior art keywords
substrate
manufacture
concavity
semiconductor device
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5141677A
Other languages
Japanese (ja)
Inventor
Kosuke Yasuno
Tatsunori Nakajima
Kosei Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5141677A priority Critical patent/JPS53136972A/en
Publication of JPS53136972A publication Critical patent/JPS53136972A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To increase the backward dielectric strength by coating in lamination the SiO2 film and Si3O2 film on the Si substrate with an aperture drilled, forming a concavity featuring a gentle slope within the substrate through a selective oxidation given to the exposed substrate, and providing a diffusion layer at the concavity.
JP5141677A 1977-05-04 1977-05-04 Manufacture of semiconductor device Pending JPS53136972A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5141677A JPS53136972A (en) 1977-05-04 1977-05-04 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5141677A JPS53136972A (en) 1977-05-04 1977-05-04 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS53136972A true JPS53136972A (en) 1978-11-29

Family

ID=12886314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5141677A Pending JPS53136972A (en) 1977-05-04 1977-05-04 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS53136972A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011204935A (en) * 2010-03-26 2011-10-13 Mitsubishi Electric Corp Semiconductor device and method of manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011204935A (en) * 2010-03-26 2011-10-13 Mitsubishi Electric Corp Semiconductor device and method of manufacturing the same

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