JPS53136489A - Mos semiconductor element of high dielectric strenght - Google Patents

Mos semiconductor element of high dielectric strenght

Info

Publication number
JPS53136489A
JPS53136489A JP5071977A JP5071977A JPS53136489A JP S53136489 A JPS53136489 A JP S53136489A JP 5071977 A JP5071977 A JP 5071977A JP 5071977 A JP5071977 A JP 5071977A JP S53136489 A JPS53136489 A JP S53136489A
Authority
JP
Japan
Prior art keywords
strenght
semiconductor element
high dielectric
mos semiconductor
high voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5071977A
Other languages
English (en)
Inventor
Shinji Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5071977A priority Critical patent/JPS53136489A/ja
Publication of JPS53136489A publication Critical patent/JPS53136489A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP5071977A 1977-05-04 1977-05-04 Mos semiconductor element of high dielectric strenght Pending JPS53136489A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5071977A JPS53136489A (en) 1977-05-04 1977-05-04 Mos semiconductor element of high dielectric strenght

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5071977A JPS53136489A (en) 1977-05-04 1977-05-04 Mos semiconductor element of high dielectric strenght

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP22201783A Division JPS59130475A (ja) 1983-11-28 1983-11-28 半導体メモリ回路装置の製造方法

Publications (1)

Publication Number Publication Date
JPS53136489A true JPS53136489A (en) 1978-11-29

Family

ID=12866678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5071977A Pending JPS53136489A (en) 1977-05-04 1977-05-04 Mos semiconductor element of high dielectric strenght

Country Status (1)

Country Link
JP (1) JPS53136489A (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157268A (en) * 1979-05-28 1980-12-06 Siemens Ag Field effect transistor and method of fabricating same
JPS57162524A (en) * 1981-03-20 1982-10-06 Ibm Fet inverter
JP2005277377A (ja) * 2004-02-24 2005-10-06 Seiko Instruments Inc 高電圧動作電界効果トランジスタとそのバイアス回路およびその高電圧回路
JP2005277378A (ja) * 2004-02-24 2005-10-06 Seiko Instruments Inc 高電圧動作電界効果トランジスタとそのバイアス回路およびその高電圧回路
JP2009170468A (ja) * 2008-01-10 2009-07-30 Sharp Corp Ｍｏｓ電界効果トランジスタ
JP2012004581A (ja) * 2004-02-24 2012-01-05 Seiko Instruments Inc 電界効果トランジスタの高電圧動作方法とそのバイアス回路
EP3131120A1 (en) * 2015-08-12 2017-02-15 MediaTek Inc. Electronic component and manufacturing method thereof

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157268A (en) * 1979-05-28 1980-12-06 Siemens Ag Field effect transistor and method of fabricating same
JPS57162524A (en) * 1981-03-20 1982-10-06 Ibm Fet inverter
JPH0231506B2 (ja) * 1981-03-20 1990-07-13 Intaanashonaru Bijinesu Mashiinzu Corp
JP2005277377A (ja) * 2004-02-24 2005-10-06 Seiko Instruments Inc 高電圧動作電界効果トランジスタとそのバイアス回路およびその高電圧回路
JP2005277378A (ja) * 2004-02-24 2005-10-06 Seiko Instruments Inc 高電圧動作電界効果トランジスタとそのバイアス回路およびその高電圧回路
JP2012004581A (ja) * 2004-02-24 2012-01-05 Seiko Instruments Inc 電界効果トランジスタの高電圧動作方法とそのバイアス回路
KR101220660B1 (ko) 2004-02-24 2013-01-18 유타카 하야시 고전압 동작 전계 효과 트랜지스터, 그의 바이어스 회로 및고전압 회로
JP2009170468A (ja) * 2008-01-10 2009-07-30 Sharp Corp Ｍｏｓ電界効果トランジスタ
EP3131120A1 (en) * 2015-08-12 2017-02-15 MediaTek Inc. Electronic component and manufacturing method thereof

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