JPS53129970A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS53129970A
JPS53129970A JP4445977A JP4445977A JPS53129970A JP S53129970 A JPS53129970 A JP S53129970A JP 4445977 A JP4445977 A JP 4445977A JP 4445977 A JP4445977 A JP 4445977A JP S53129970 A JPS53129970 A JP S53129970A
Authority
JP
Japan
Prior art keywords
layer
production
semiconductor device
protrusions
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4445977A
Other languages
Japanese (ja)
Inventor
Takashi Ishikawa
Hiroyuki Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4445977A priority Critical patent/JPS53129970A/en
Publication of JPS53129970A publication Critical patent/JPS53129970A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To make a flat SiO2 layer by spin-coating liquid glass on a SiO2 layer having protrusions to bury the protrusions thereafter etching the layer from the glass layer side.
COPYRIGHT: (C)1978,JPO&Japio
JP4445977A 1977-04-20 1977-04-20 Production of semiconductor device Pending JPS53129970A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4445977A JPS53129970A (en) 1977-04-20 1977-04-20 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4445977A JPS53129970A (en) 1977-04-20 1977-04-20 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS53129970A true JPS53129970A (en) 1978-11-13

Family

ID=12692063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4445977A Pending JPS53129970A (en) 1977-04-20 1977-04-20 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS53129970A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4594769A (en) * 1984-06-15 1986-06-17 Signetics Corporation Method of forming insulator of selectively varying thickness on patterned conductive layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4594769A (en) * 1984-06-15 1986-06-17 Signetics Corporation Method of forming insulator of selectively varying thickness on patterned conductive layer

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