JPS53123662A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS53123662A
JPS53123662A JP3887477A JP3887477A JPS53123662A JP S53123662 A JPS53123662 A JP S53123662A JP 3887477 A JP3887477 A JP 3887477A JP 3887477 A JP3887477 A JP 3887477A JP S53123662 A JPS53123662 A JP S53123662A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
film
opening
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3887477A
Other languages
Japanese (ja)
Inventor
Kazutoshi Kamibayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3887477A priority Critical patent/JPS53123662A/en
Publication of JPS53123662A publication Critical patent/JPS53123662A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To obtain an excellent wiring without using aqua regia, by providing an opening to the insulating film adhered onto a Si substrate, by vapor-depositing a metal-wiring film on it after providing a photo resist film with an opening, and by leaving the wiring film only in the opening part by removing the resist film.
COPYRIGHT: (C)1978,JPO&Japio
JP3887477A 1977-04-04 1977-04-04 Manufacture of semiconductor device Pending JPS53123662A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3887477A JPS53123662A (en) 1977-04-04 1977-04-04 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3887477A JPS53123662A (en) 1977-04-04 1977-04-04 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS53123662A true JPS53123662A (en) 1978-10-28

Family

ID=12537349

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3887477A Pending JPS53123662A (en) 1977-04-04 1977-04-04 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS53123662A (en)

Similar Documents

Publication Publication Date Title
JPS53114685A (en) Manufacture for semiconductor device
JPS53123662A (en) Manufacture of semiconductor device
JPS53128285A (en) Semiconductor device and production of the same
JPS52131462A (en) Manufacture of semiconductor device
JPS544070A (en) Manufacture for semiconductor device
JPS5212572A (en) Semi-conductor device
JPS5320857A (en) Semiconductor device
JPS5373971A (en) Manufacture for semiconductor device
JPS5263685A (en) Production of semiconductor device
JPS5268388A (en) Semiconductor integrated circuit
JPS5245270A (en) Semiconductor device
JPS5341177A (en) Mounting method of electronic parts
JPS5210676A (en) Semiconductor device
JPS5397791A (en) Production of semiconductor integrated circuit device
JPS538082A (en) Production of semiconductor device
JPS5271993A (en) Production of semiconductor integrated circuit device
JPS52125285A (en) Semiconductor device
JPS5421182A (en) Manufacture for semiconductor device
JPS54972A (en) Manufacture for semiconductor device
JPS52119857A (en) Diffusion of impurities in semi-conductor device
JPS532071A (en) Manufacture of semiconductor device
JPS5269649A (en) Semiconductor distortion element
JPS52153668A (en) Photo mask of semiconductor integrated circuit
JPS5333579A (en) Semiconductor device production
JPS5226169A (en) Photoetching method of silicone oxide layer