JPS53120395A - Production of avalanche photo diode - Google Patents
Production of avalanche photo diodeInfo
- Publication number
- JPS53120395A JPS53120395A JP3643277A JP3643277A JPS53120395A JP S53120395 A JPS53120395 A JP S53120395A JP 3643277 A JP3643277 A JP 3643277A JP 3643277 A JP3643277 A JP 3643277A JP S53120395 A JPS53120395 A JP S53120395A
- Authority
- JP
- Japan
- Prior art keywords
- production
- photo diode
- avalanche photo
- sicry
- stal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To obtain an element which operates on low voltage and has a good SN ratio for infrared light by implanting group III atomic ions such as boron of specified dose into a P type Sicry stal and performing drive-in diffusion while defining also the concentration distribution standard deviation of the implanted atoms.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3643277A JPS53120395A (en) | 1977-03-30 | 1977-03-30 | Production of avalanche photo diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3643277A JPS53120395A (en) | 1977-03-30 | 1977-03-30 | Production of avalanche photo diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53120395A true JPS53120395A (en) | 1978-10-20 |
Family
ID=12469641
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3643277A Pending JPS53120395A (en) | 1977-03-30 | 1977-03-30 | Production of avalanche photo diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53120395A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04109131U (en) * | 1991-03-08 | 1992-09-21 | 株式会社イナツクス | artificial marble |
US9105788B2 (en) | 2010-04-23 | 2015-08-11 | Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. | Silicon photoelectric multiplier |
-
1977
- 1977-03-30 JP JP3643277A patent/JPS53120395A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04109131U (en) * | 1991-03-08 | 1992-09-21 | 株式会社イナツクス | artificial marble |
US9105788B2 (en) | 2010-04-23 | 2015-08-11 | Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. | Silicon photoelectric multiplier |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS53120395A (en) | Production of avalanche photo diode | |
JPS5420684A (en) | Light emitting semiconductor device | |
JPS5211786A (en) | Method of manufacturing p-m junction type solar battery | |
JPS5315793A (en) | Photo detector | |
JPS5218180A (en) | Constant voltage diode | |
JPS5210065A (en) | Method for manufacturing multi-alkali photo electric surface | |
JPS5424582A (en) | Manufacture for mis semiconductor device | |
JPS5435218A (en) | Reduction of phytotoxicity of paddy-rice plant | |
JPS5414689A (en) | Constant-voltage diode | |
JPS5410682A (en) | Production of semiconductor elements | |
JPS53104190A (en) | Silicon avalanche photodiode | |
JPS5423490A (en) | Visual light detecting element and its manufacture | |
JPS53105375A (en) | Semiconductor device | |
JPS53102669A (en) | Manufacture for semiconductor device | |
JPS53120285A (en) | Manufacture of semiconductor | |
JPS524187A (en) | P-n conjunction type solid element | |
JPS5431281A (en) | Optical exposure mask | |
JPS51134565A (en) | Schottky barrier diode manufacturing process | |
JPS53104160A (en) | Impurity diffusing method | |
JPS533171A (en) | Impurity diffusion method | |
JPS52115160A (en) | Field radiation cathode | |
JPS5217765A (en) | Method to diffuse arsenic in a silicone wafer | |
JPS53115182A (en) | Production of semiconductor device | |
JPS53135570A (en) | Impurity diffusing method to semiconductor wafer | |
JPS53147461A (en) | Production of semiconductor device |