JPS5311837B2 - - Google Patents
Info
- Publication number
- JPS5311837B2 JPS5311837B2 JP14246775A JP14246775A JPS5311837B2 JP S5311837 B2 JPS5311837 B2 JP S5311837B2 JP 14246775 A JP14246775 A JP 14246775A JP 14246775 A JP14246775 A JP 14246775A JP S5311837 B2 JPS5311837 B2 JP S5311837B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2902—Materials being Group IVA materials
- H10P14/2905—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
- H10P14/3218—Phosphides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
- H10P14/3221—Arsenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3242—Structure
- H10P14/3244—Layer structure
- H10P14/3248—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3242—Structure
- H10P14/3244—Layer structure
- H10P14/3254—Graded layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3418—Phosphides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3421—Arsenides
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/025—Deposition multi-step
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/059—Germanium on silicon or Ge-Si on III-V
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/067—Graded energy gap
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/119—Phosphides of gallium or indium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/933—Germanium or silicon or Ge-Si on III-V
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/938—Lattice strain control or utilization
Landscapes
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/533,590 US3963539A (en) | 1974-12-17 | 1974-12-17 | Two stage heteroepitaxial deposition process for GaAsP/Si LED's |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5178186A JPS5178186A (cg-RX-API-DMAC7.html) | 1976-07-07 |
| JPS5311837B2 true JPS5311837B2 (cg-RX-API-DMAC7.html) | 1978-04-25 |
Family
ID=24126627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14246775A Expired JPS5311837B2 (cg-RX-API-DMAC7.html) | 1974-12-17 | 1975-12-02 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3963539A (cg-RX-API-DMAC7.html) |
| JP (1) | JPS5311837B2 (cg-RX-API-DMAC7.html) |
| DE (1) | DE2549738C2 (cg-RX-API-DMAC7.html) |
| FR (1) | FR2295575A1 (cg-RX-API-DMAC7.html) |
| IT (1) | IT1050021B (cg-RX-API-DMAC7.html) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4025157A (en) * | 1975-06-26 | 1977-05-24 | The United States Of America As Represented By The Secretary Of The Navy | Gradient index miniature coupling lens |
| JPS5856963B2 (ja) * | 1977-05-06 | 1983-12-17 | 三菱化成ポリテック株式会社 | 電子発光化合物半導体の製造方法 |
| US4314873A (en) * | 1977-07-05 | 1982-02-09 | The United States Of America As Represented By The Secretary Of The Navy | Method for depositing heteroepitaxially InP on GaAs semi-insulating substrates |
| US4180825A (en) * | 1977-09-16 | 1979-12-25 | Harris Corporation | Heteroepitaxial deposition of GaP on silicon substrates |
| US4120706A (en) * | 1977-09-16 | 1978-10-17 | Harris Corporation | Heteroepitaxial deposition of gap on silicon substrates |
| US4517047A (en) * | 1981-01-23 | 1985-05-14 | The United States Of America As Represented By The Secretary Of The Army | MBE growth technique for matching superlattices grown on GaAs substrates |
| JPS6012724A (ja) * | 1983-07-01 | 1985-01-23 | Agency Of Ind Science & Technol | 化合物半導体の成長方法 |
| US4697202A (en) * | 1984-02-02 | 1987-09-29 | Sri International | Integrated circuit having dislocation free substrate |
| JPS61291491A (ja) * | 1985-06-19 | 1986-12-22 | Mitsubishi Monsanto Chem Co | りん化ひ化ガリウム混晶エピタキシヤルウエハ |
| US4876210A (en) * | 1987-04-30 | 1989-10-24 | The University Of Delaware | Solution growth of lattice mismatched and solubility mismatched heterostructures |
| US5238869A (en) * | 1988-07-25 | 1993-08-24 | Texas Instruments Incorporated | Method of forming an epitaxial layer on a heterointerface |
| US5204284A (en) * | 1989-01-19 | 1993-04-20 | Hewlett-Packard Company | Method of making a high band-gap opto-electronic device |
| US5060028A (en) * | 1989-01-19 | 1991-10-22 | Hewlett-Packard Company | High band-gap opto-electronic device |
| CA2062134C (en) * | 1991-05-31 | 1997-03-25 | Ibm | Low Defect Densiry/Arbitrary Lattice Constant Heteroepitaxial Layers |
| JPH05291140A (ja) * | 1992-04-09 | 1993-11-05 | Fujitsu Ltd | 化合物半導体薄膜の成長方法 |
| DE4310569A1 (de) * | 1993-03-26 | 1994-09-29 | Daimler Benz Ag | Laserdiode |
| DE4310571A1 (de) * | 1993-03-26 | 1994-09-29 | Daimler Benz Ag | Leuchtdiode |
| US5526768A (en) * | 1994-02-03 | 1996-06-18 | Harris Corporation | Method for providing a silicon and diamond substrate having a carbon to silicon transition layer and apparatus thereof |
| US5449927A (en) * | 1994-05-16 | 1995-09-12 | Santa Barbara Research Center | Multilayer buffer structure including II-VI compounds on a silicon substrate |
| US6010937A (en) * | 1995-09-05 | 2000-01-04 | Spire Corporation | Reduction of dislocations in a heteroepitaxial semiconductor structure |
| JP3268731B2 (ja) | 1996-10-09 | 2002-03-25 | 沖電気工業株式会社 | 光電変換素子 |
| US7202503B2 (en) * | 2004-06-30 | 2007-04-10 | Intel Corporation | III-V and II-VI compounds as template materials for growing germanium containing film on silicon |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USB524765I5 (cg-RX-API-DMAC7.html) * | 1966-02-03 | 1900-01-01 | ||
| US3433684A (en) * | 1966-09-13 | 1969-03-18 | North American Rockwell | Multilayer semiconductor heteroepitaxial structure |
| US3783009A (en) * | 1971-02-22 | 1974-01-01 | Air Reduction | Method for improving perfection of epitaxially grown germanium films |
| US3699401A (en) * | 1971-05-17 | 1972-10-17 | Rca Corp | Photoemissive electron tube comprising a thin film transmissive semiconductor photocathode structure |
| JPS52915B1 (cg-RX-API-DMAC7.html) * | 1971-06-01 | 1977-01-11 | ||
| US3766447A (en) * | 1971-10-20 | 1973-10-16 | Harris Intertype Corp | Heteroepitaxial structure |
| US3862859A (en) * | 1972-01-10 | 1975-01-28 | Rca Corp | Method of making a semiconductor device |
| JPS5228444Y2 (cg-RX-API-DMAC7.html) * | 1972-01-18 | 1977-06-28 |
-
1974
- 1974-12-17 US US05/533,590 patent/US3963539A/en not_active Expired - Lifetime
-
1975
- 1975-10-20 FR FR7533264A patent/FR2295575A1/fr active Granted
- 1975-11-06 DE DE2549738A patent/DE2549738C2/de not_active Expired
- 1975-12-02 JP JP14246775A patent/JPS5311837B2/ja not_active Expired
- 1975-12-09 IT IT30093/75A patent/IT1050021B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| DE2549738C2 (de) | 1984-04-19 |
| FR2295575B1 (cg-RX-API-DMAC7.html) | 1978-04-07 |
| JPS5178186A (cg-RX-API-DMAC7.html) | 1976-07-07 |
| IT1050021B (it) | 1981-03-10 |
| US3963539A (en) | 1976-06-15 |
| FR2295575A1 (fr) | 1976-07-16 |
| DE2549738A1 (de) | 1976-07-01 |