JPS53118326A - Complementary mos integrated circuit - Google Patents

Complementary mos integrated circuit

Info

Publication number
JPS53118326A
JPS53118326A JP3304077A JP3304077A JPS53118326A JP S53118326 A JPS53118326 A JP S53118326A JP 3304077 A JP3304077 A JP 3304077A JP 3304077 A JP3304077 A JP 3304077A JP S53118326 A JPS53118326 A JP S53118326A
Authority
JP
Japan
Prior art keywords
integrated circuit
complementary mos
mos integrated
substrate
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3304077A
Other languages
Japanese (ja)
Inventor
Moichi Matsukuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3304077A priority Critical patent/JPS53118326A/en
Publication of JPS53118326A publication Critical patent/JPS53118326A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors

Landscapes

  • Logic Circuits (AREA)

Abstract

PURPOSE:To prevent the effect of the noise given from the output signal line, by connecting the substrate of MOS transistor, which uses the intermediate potential between the high and low potentials of the second complementary inverter as the source, in such a way that the substrate may be the reverse bias potential to the source.
JP3304077A 1977-03-25 1977-03-25 Complementary mos integrated circuit Pending JPS53118326A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3304077A JPS53118326A (en) 1977-03-25 1977-03-25 Complementary mos integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3304077A JPS53118326A (en) 1977-03-25 1977-03-25 Complementary mos integrated circuit

Publications (1)

Publication Number Publication Date
JPS53118326A true JPS53118326A (en) 1978-10-16

Family

ID=12375664

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3304077A Pending JPS53118326A (en) 1977-03-25 1977-03-25 Complementary mos integrated circuit

Country Status (1)

Country Link
JP (1) JPS53118326A (en)

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