JPS53112662A - Growing unit for ion beam thin film - Google Patents

Growing unit for ion beam thin film

Info

Publication number
JPS53112662A
JPS53112662A JP2846077A JP2846077A JPS53112662A JP S53112662 A JPS53112662 A JP S53112662A JP 2846077 A JP2846077 A JP 2846077A JP 2846077 A JP2846077 A JP 2846077A JP S53112662 A JPS53112662 A JP S53112662A
Authority
JP
Japan
Prior art keywords
ion beam
thin film
growing unit
beam thin
small holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2846077A
Other languages
Japanese (ja)
Inventor
Shohei Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2846077A priority Critical patent/JPS53112662A/en
Publication of JPS53112662A publication Critical patent/JPS53112662A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE: To obtain the film formation having large area and uniform film thickness, by extending the ion beam width, through controlling the distribution of small holes together with a plurality of small holes for the barrier.
COPYRIGHT: (C)1978,JPO&Japio
JP2846077A 1977-03-14 1977-03-14 Growing unit for ion beam thin film Pending JPS53112662A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2846077A JPS53112662A (en) 1977-03-14 1977-03-14 Growing unit for ion beam thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2846077A JPS53112662A (en) 1977-03-14 1977-03-14 Growing unit for ion beam thin film

Publications (1)

Publication Number Publication Date
JPS53112662A true JPS53112662A (en) 1978-10-02

Family

ID=12249270

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2846077A Pending JPS53112662A (en) 1977-03-14 1977-03-14 Growing unit for ion beam thin film

Country Status (1)

Country Link
JP (1) JPS53112662A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63127529A (en) * 1986-09-24 1988-05-31 プラザー　コーポレーション Large area molecular beam source sectional for semiconductor treatment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63127529A (en) * 1986-09-24 1988-05-31 プラザー　コーポレーション Large area molecular beam source sectional for semiconductor treatment

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