JPS54971A - Growing method of ion beam crystal - Google Patents

Growing method of ion beam crystal

Info

Publication number
JPS54971A
JPS54971A JP6715377A JP6715377A JPS54971A JP S54971 A JPS54971 A JP S54971A JP 6715377 A JP6715377 A JP 6715377A JP 6715377 A JP6715377 A JP 6715377A JP S54971 A JPS54971 A JP S54971A
Authority
JP
Japan
Prior art keywords
ion beam
growing method
beam crystal
crystal
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6715377A
Other languages
Japanese (ja)
Inventor
Tatsuo Fuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6715377A priority Critical patent/JPS54971A/en
Publication of JPS54971A publication Critical patent/JPS54971A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE: To perform ion beam crystal growing, by commonly using anode ion beam and electron beam of each element constituting a compound.
COPYRIGHT: (C)1979,JPO&Japio
JP6715377A 1977-06-06 1977-06-06 Growing method of ion beam crystal Pending JPS54971A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6715377A JPS54971A (en) 1977-06-06 1977-06-06 Growing method of ion beam crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6715377A JPS54971A (en) 1977-06-06 1977-06-06 Growing method of ion beam crystal

Publications (1)

Publication Number Publication Date
JPS54971A true JPS54971A (en) 1979-01-06

Family

ID=13336666

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6715377A Pending JPS54971A (en) 1977-06-06 1977-06-06 Growing method of ion beam crystal

Country Status (1)

Country Link
JP (1) JPS54971A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5624924A (en) * 1979-08-08 1981-03-10 Agency Of Ind Science & Technol Manufacture of solid thin film by ion beam
JPS583222A (en) * 1981-06-29 1983-01-10 Fujitsu Ltd Ion beam accumulation
JPH04350397A (en) * 1991-02-15 1992-12-04 Hitachi Electron Eng Co Ltd Cross flow fan

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5624924A (en) * 1979-08-08 1981-03-10 Agency Of Ind Science & Technol Manufacture of solid thin film by ion beam
JPS594847B2 (en) * 1979-08-08 1984-02-01 工業技術院長 Ion beam solid membrane manufacturing method
JPS583222A (en) * 1981-06-29 1983-01-10 Fujitsu Ltd Ion beam accumulation
JPH04350397A (en) * 1991-02-15 1992-12-04 Hitachi Electron Eng Co Ltd Cross flow fan

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