JPS53102674A - Package for high power semiconductor device - Google Patents

Package for high power semiconductor device

Info

Publication number
JPS53102674A
JPS53102674A JP1597678A JP1597678A JPS53102674A JP S53102674 A JPS53102674 A JP S53102674A JP 1597678 A JP1597678 A JP 1597678A JP 1597678 A JP1597678 A JP 1597678A JP S53102674 A JPS53102674 A JP S53102674A
Authority
JP
Japan
Prior art keywords
package
semiconductor device
high power
power semiconductor
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1597678A
Other languages
Japanese (ja)
Other versions
JPS6128219B2 (en
Inventor
Haabaado Jiyonson Jiyosefu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Publication of JPS53102674A publication Critical patent/JPS53102674A/en
Publication of JPS6128219B2 publication Critical patent/JPS6128219B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142Metallic substrates having insulating layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Wire Bonding (AREA)
  • Bipolar Transistors (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)
JP1597678A 1977-02-17 1978-02-16 Package for high power semiconductor device Granted JPS53102674A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US76963777A 1977-02-17 1977-02-17

Publications (2)

Publication Number Publication Date
JPS53102674A true JPS53102674A (en) 1978-09-07
JPS6128219B2 JPS6128219B2 (en) 1986-06-28

Family

ID=25086071

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1597678A Granted JPS53102674A (en) 1977-02-17 1978-02-16 Package for high power semiconductor device

Country Status (5)

Country Link
JP (1) JPS53102674A (en)
DE (1) DE2806099A1 (en)
FR (1) FR2381388A1 (en)
GB (1) GB1599852A (en)
NL (1) NL7801658A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5899838U (en) * 1981-12-28 1983-07-07 富士通株式会社 semiconductor equipment
US5317194A (en) * 1989-10-17 1994-05-31 Kabushiki Kaisha Toshiba Resin-sealed semiconductor device having intermediate silicon thermal dissipation means and embedded heat sink

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2511193A1 (en) * 1981-08-07 1983-02-11 Thomson Csf Laminated support for cooling semiconductor - has three metal layers including one rigid layer to avoid bi-metallic bending with changing temp.
US4866571A (en) * 1982-06-21 1989-09-12 Olin Corporation Semiconductor package
US4570337A (en) * 1982-04-19 1986-02-18 Olin Corporation Method of assembling a chip carrier
US5014159A (en) * 1982-04-19 1991-05-07 Olin Corporation Semiconductor package
EP0139029A1 (en) * 1983-10-19 1985-05-02 Olin Corporation Improved semiconductor package
JPS60113931A (en) * 1983-11-25 1985-06-20 Toshiba Corp Semiconductor device
US4862323A (en) * 1984-04-12 1989-08-29 Olin Corporation Chip carrier
FR2563379A1 (en) * 1984-04-20 1985-10-25 Artus Assembly of semiconductor electronic devices mounted on a dissipator
US4853491A (en) * 1984-10-03 1989-08-01 Olin Corporation Chip carrier
US4639760A (en) * 1986-01-21 1987-01-27 Motorola, Inc. High power RF transistor assembly
DE3837617A1 (en) * 1988-11-05 1990-05-10 Semikron Elektronik Gmbh SUPPORT BODY FOR THE ELECTRICALLY INSULATED ARRANGEMENT OF COMPONENTS
DE3837920A1 (en) * 1988-11-09 1990-05-10 Semikron Elektronik Gmbh SEMICONDUCTOR ELEMENT
US5917236A (en) * 1995-12-08 1999-06-29 Hewlett-Packard Company Packaging system for field effects transistors
DE102006011995B3 (en) * 2006-03-16 2007-11-08 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module, has base plate connected with substrate in material-coherent manner, and contact layer of substrate divided into segments for providing material-coherent connection with base plate
US8237260B2 (en) 2008-11-26 2012-08-07 Infineon Technologies Ag Power semiconductor module with segmented base plate
US9960127B2 (en) 2016-05-18 2018-05-01 Macom Technology Solutions Holdings, Inc. High-power amplifier package
US10134658B2 (en) 2016-08-10 2018-11-20 Macom Technology Solutions Holdings, Inc. High power transistors

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3728589A (en) * 1971-04-16 1973-04-17 Rca Corp Semiconductor assembly
JPS49131863U (en) * 1973-03-10 1974-11-13

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5899838U (en) * 1981-12-28 1983-07-07 富士通株式会社 semiconductor equipment
US5317194A (en) * 1989-10-17 1994-05-31 Kabushiki Kaisha Toshiba Resin-sealed semiconductor device having intermediate silicon thermal dissipation means and embedded heat sink

Also Published As

Publication number Publication date
FR2381388A1 (en) 1978-09-15
GB1599852A (en) 1981-10-07
NL7801658A (en) 1978-08-21
JPS6128219B2 (en) 1986-06-28
DE2806099A1 (en) 1978-08-24

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