FR2511193A1 - Laminated support for cooling semiconductor - has three metal layers including one rigid layer to avoid bi-metallic bending with changing temp. - Google Patents

Laminated support for cooling semiconductor - has three metal layers including one rigid layer to avoid bi-metallic bending with changing temp. Download PDF

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Publication number
FR2511193A1
FR2511193A1 FR8115361A FR8115361A FR2511193A1 FR 2511193 A1 FR2511193 A1 FR 2511193A1 FR 8115361 A FR8115361 A FR 8115361A FR 8115361 A FR8115361 A FR 8115361A FR 2511193 A1 FR2511193 A1 FR 2511193A1
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Prior art keywords
layer
copper
colamine
substrate
support according
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FR2511193B1 (en
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Christian Val
Jacques Agniel
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Thales SA
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Thomson CSF SA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05553—Shape in top view being rectangular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The support structure includes a first layer of copper (C1) under which is a layer of invar (IV). Under this again is a second layer of copper (C2) which is shaped with projecting ribs so as to radiate array the heat. A soldering (BR) provides the connection between the substrate of the component which carries the element (E), and the upper layer of copper (C1). The lower layer of copper forms a cooling radiator, which is sufficiently rigid to ensure that the upper copper and invar layers do not bend under the bimetallic effect with changing temperature. This avoids the problem arising with two layer cooling supports. The radiating fins may alternatively be made of profiled aluminium, once the structure is made rigid with a layer of copper.

Description

SUPPORT EN MATERIAU COLAMINE POUR
LE REFROIDISSEMENT ET L'ENCAPSULATION
D'UN SUBSTRAT DE CIRCUIT ELECTRONIQUE.COLAMINE MATERIAL SUPPORT FOR
COOLING AND ENCAPSULATION
OF AN ELECTRONIC CIRCUIT SUBSTRATE.

L'invention concerne un support en matériau colaminé pour le refroidissement et l'encapsulation d'un substrat de circuit électronique et plus particulièrement d'un substrat de grandes dimensions. The invention relates to a support made of colaminated material for cooling and encapsulating an electronic circuit substrate and more particularly a large substrate.

Il est connu que les performances d'un dispositif de refroidissement dépendent en premier lieu de la bonne conduction thermique qui existe entre le substrat à refroidir et le milieu ambiant. Il est aussi connu que dans l'état actuel de la technique la brasure du substrat sur le radiateur est la meilleure façon d'obtenir une bonne conductibilité thermique. Toutefois lorsque le substrat dépasse certaines dimensions, typiquement supérieures à 50 mm X 50 mm, les différences de valeurs entre le coefficient de dilatation thermique du substrat d'une part et celui du dissipateur d'autre part font apparaître des contraintes de cisaillements excessives provoquant des ruptures soit dans le substrat soit dans la brasure.Une solution connue consiste à serrer mécaniquement le substrat contre le refroidisseur après avoir placé entre ces derniers une mince couche de graisse conductrice de la chaleur; cependant les substrats utilisés ne sont pas parfaitement plans ce qui conduit, d'un composant à l'autre,à de notables différences de conductibilité thermique; de plus et pour certaines classes de composants les graisses conductrices ne peuvent être utilisées en raison de leur manque de stabilité à long terme. It is known that the performance of a cooling device depends first of all on the good thermal conduction which exists between the substrate to be cooled and the ambient medium. It is also known that in the current state of the art brazing of the substrate on the radiator is the best way to obtain good thermal conductivity. However, when the substrate exceeds certain dimensions, typically greater than 50 mm × 50 mm, the differences in values between the coefficient of thermal expansion of the substrate on the one hand and that of the dissipator on the other hand show excessive shear stresses causing ruptures either in the substrate or in the solder. A known solution consists in mechanically clamping the substrate against the cooler after having placed between them a thin layer of heat-conducting grease; however, the substrates used are not perfectly flat, which leads, from one component to another, to significant differences in thermal conductivity; moreover and for certain classes of components conductive greases cannot be used because of their lack of long-term stability.

Une autre solution connue consiste à serrer par des moyens mécaniques le substrat sur le refroidisseur en plaçant entre ces derniers une plaque de caoutchouc conducteur; la conductibilité thermique reste faible et le support necessite un dispositif de serrage. Another known solution consists in clamping by mechanical means the substrate on the cooler by placing between them a conductive rubber plate; the thermal conductivity remains low and the support requires a clamping device.

Dans le domaine des boîtiers d'encapsulation pour des circuits fonctionnant, par exemple dans la gamme des hyperfréquences, la technique actuelle utilise des boîtiers taillés dans la masse à partir de matériaux rares tels que le ferronickel pour reduire l'encombrement ou le titane pour reduire le poids.Ces matériaux rares sont choisis pour leur coefficient de dilatation, leur usinabilité, leur aptitude à être brasé. Tous ne reunissent pas ces conditions, le titane, par exemple, n'est pas directement brasable et doit recevoir au préalable un dépôt de métal compatible (nickel, or). In the field of encapsulation boxes for circuits operating, for example in the microwave range, the current technique uses boxes cut in the mass from rare materials such as ferronickel to reduce the bulk or titanium to reduce weight.These rare materials are chosen for their coefficient of expansion, their machinability, their ability to be brazed. Not all meet these conditions, titanium, for example, is not directly solderable and must first receive a compatible metal deposit (nickel, gold).

La présente invention propose d'utiliser un matériau constitué de couches de métal superposées connu sous le nom de colaminé pour effectuer le couplage thermique du substrat au milieu ambiant. Le coefficient de dilation en surface peut être prédéterminé pour être égal à celui du substrat rendant la brasure possible pour toute dimension de ce substrat. Selon la caractéristique principale de l'invention ce colaminé comporte une des couches de métal externes suffisamment épaisse pour constituer, apyres transformation et suivant le cas, un radiateur, une embase de transistor fixée sur un radiateur standard ou encore un boîtier pour microcircuits; par ailleurs cette couche est d'épaisseur suffisante pour éviter une déformation mécanique du colaminé en fonction de la température (effet bilame).Selon une autre caractéristique de l'invention des traversées en métal à bonne conductibilité thermique peuvent être placées dans l'épaisseur du colaminé pour augmenter sa conductibilité thermique dans le sens transversal. The present invention proposes to use a material consisting of superimposed metal layers known as colamine to effect the thermal coupling of the substrate to the ambient medium. The surface expansion coefficient can be predetermined to be equal to that of the substrate making solder possible for any dimension of this substrate. According to the main characteristic of the invention, this collaminate comprises one of the layers of external metal which is thick enough to constitute, after transformation and, as the case may be, a radiator, a transistor base fixed to a standard radiator or even a housing for microcircuits; moreover, this layer is of sufficient thickness to avoid mechanical deformation of the colamine as a function of the temperature (bimetallic strip effect). According to another characteristic of the invention, metal bushings with good thermal conductivity can be placed in the thickness of the colaminated to increase its thermal conductivity in the transverse direction.

L'invention a donc pour objet un support en matériau colaminé pour le refroidissement et l'encapsulation d'un substrat isolant ou semiconducteur sur lequel est disposé au moins un élément dissipatif, lequel substrat est brasé sur une embase constituée d'au moins deux couches de métal superposées du type colaminé; caractérisé en ce qu'une des couches externes dudit colaminé a une épaisseur plus importante que l'autre couche externe, l'epaisseur étant suffisante pour constituer un organe de refroidissement ou un organe d'encapsulation. The subject of the invention is therefore a support made of colaminated material for cooling and encapsulating an insulating or semiconductor substrate on which is disposed at least one dissipative element, which substrate is brazed on a base made up of at least two layers of superimposed metal of the colamine type; characterized in that one of the outer layers of said colamine has a greater thickness than the other outer layer, the thickness being sufficient to constitute a cooling member or an encapsulation member.

L'invention sera mieux comprise et les détails de réalisation apparaitront plus clairement à Laide de la description qui suit, en référence aux figures annexées. The invention will be better understood and the details of embodiment will appear more clearly with the aid of the description which follows, with reference to the appended figures.

La figure 1 illustre une possibilité d'associer un substrat a un refroi
disseur selon l'art connu.Figure 1 illustrates a possibility of associating a substrate with a cooler
straightener according to known art.

La figure 2 est un exemple de matériau colaminé selon l'art connu. Figure 2 is an example of a collaminated material according to known art.

La figure 3 illustre un permier exemple de réalisation d'un dispositif de
refroidissement selon l'invention.FIG. 3 illustrates a first embodiment of a device for
cooling according to the invention.

La figure 4 est une première variante de réalisation de dispositif de
refroidissement selon l'invention.Figure 4 is a first alternative embodiment of the device
cooling according to the invention.

La figure 5 illustre une deuxième variante de l'invention dans laquelle
le colaminé est utilisé comme répartiteur de flux thermique et comme
embase de transistor.FIG. 5 illustrates a second variant of the invention in which
colamine is used as a heat flux distributor and as
transistor base.

La figure 6 illustre une troisième variante de l'invention dans laquelle
le colaminé est utilisé seulement comme répartiteur de flux thermique
dans un transistor.FIG. 6 illustrates a third variant of the invention in which
colamine is used only as a heat flux distributor
in a transistor.

La figure 7 est un boîtier pour microcircuit réalisé dans la couche
épaisse du colaminé selon une des variantes de réalisation de l'inven
tion
La figure 8 est une vue plus détaillée du dispositif de refroidissement
selon un aspect de l'invention et représenté de façon simplifiée sur la
figure 3.Figure 7 is a microcircuit housing made in the layer
thick colaminate according to one of the embodiments of the invention
tion
Figure 8 is a more detailed view of the cooling device
according to one aspect of the invention and shown in a simplified manner on the
figure 3.

La figure 9 illustre un autre aspect de l'invention permettant d'ame-
liorer la conductibilité thermique transversale du colaminé.FIG. 9 illustrates another aspect of the invention making it possible to improve
improve the transverse thermal conductivity of colamine.

La figure I illustre une possibilité d'associer un substrat a un refroidisseur selon l'art connu. Sur cette vue en coupe un substrat S comportant un élément dissipatif E est placé, par l'intermédiaire d'une plaque de caoutchouc conducteur PC, sur un radiateur conventionnel R. Un cadre d'appui
CA et quatre vis de serrage V permettent d'exercer une pression sur la périphérie du substrat S assurant ainsi le contact thermique avec le radiateur R par compression de la plaque de caoutchouc conducteur PC.Figure I illustrates a possibility of associating a substrate with a cooler according to the known art. In this sectional view a substrate S comprising a dissipative element E is placed, by means of a conductive rubber plate PC, on a conventional radiator R. A support frame
CA and four clamping screws V make it possible to exert pressure on the periphery of the substrate S thus ensuring thermal contact with the radiator R by compression of the conductive rubber plate PC.

La figure 2 montre un exemple de matériau colaminé selon l'art connu. FIG. 2 shows an example of a collaminated material according to the known art.

Un tel matériau est constitué d'un nombre de couches superposées qui peut être important. Chaque couche diffère généralement des autres couches par son épaisseur et la nature du métal utilisé.Such a material consists of a number of superimposed layers which can be significant. Each layer generally differs from the other layers by its thickness and the nature of the metal used.

En choisissant judicieusement le métal et l'épaisseur de chaque couche ainsi que le nombre de couches il est possible d'obtenir un nouveau matériau ayant un certain nombre de propriétés physiques choisies d'avance, ensemble
de propriétés qu'aucun métal constitutif ne possède en propre. Dans le cas
présent le coefficient de dilation en surface, la conductibilité thermique et
un bon maintien de la planéité en fonction de la température (effet bilame)
sont les trois paramètres essentiels à prendre en considération. La figure 2
représente un élément de colaminé limité à trois couches A, B et C et à des métaux d'usage courant. Sous cette forme simplifiée et économique les performances obtenues sont satisfaisantes. Ce colaminé est constitué d'une couche B d'invar, d'épaisseur b, placé en sandwich entre deux couches A et C en cuivre d'épaisseurs respectives a, c.Le coefficient de dilatation du cuivre est d'environ 17.10-6 par degré centigrade autour de 200C alors que celui de l'invar n'est, dans les mêmes conditions,-que de 2.10 6. En ajustant le rapport a/b des épaisseurs de la couche A en cuivre et de la couche B en invar il est possible d'obtenir un coéfficient de dilatation sur la face supérieure de la couche A variant de façon progressive de celui de l'invar (2.10-6) à celui du cuivre (17.10-G). La couche B en invar se dilatant moins que la couche A en cuivre l'ensemble subirait une déformation mécanique sous l'effet de la température (effet bilame) si une couche C en cuivre, d'épaisseur déterminée c, placée à la partie inférieure ne soumettait la couche B en invar à une force égale et opposée à celle appliquée par la couche A.By judiciously choosing the metal and the thickness of each layer as well as the number of layers it is possible to obtain a new material having a certain number of physical properties chosen in advance, together
properties that no constituent metal has of its own. In the case
presents the surface expansion coefficient, the thermal conductivity and
good flatness maintenance as a function of temperature (bimetal effect)
are the three essential parameters to consider. Figure 2
represents an element of colamine limited to three layers A, B and C and to metals of current use. In this simplified and economical form, the performances obtained are satisfactory. This colamine consists of a layer B of invar, of thickness b, sandwiched between two layers A and C of copper of respective thicknesses a, C. The coefficient of expansion of the copper is approximately 17.10-6 per centigrade degree around 200C while that of invar is, under the same conditions, only 2.10 6. By adjusting the a / b ratio of the thicknesses of layer A in copper and layer B in invar it is possible to obtain a coefficient of expansion on the upper face of layer A varying gradually from that of invar (2.10-6) to that of copper (17.10-G). The invar layer B expands less than the copper layer A the whole would undergo mechanical deformation under the effect of temperature (bimetallic strip effect) if a copper layer C, of determined thickness c, placed at the bottom did not subject layer B invar to a force equal to and opposite to that applied by layer A.

La figure 3 illustre un premier exemple de réalisation d'un dispositif de refroidissement selon l'invention. Dans cette variante préférée le matériau colaminé CL est, selon la caractéristique principale de l'invention, constitué d'une première couche de cuivre C1, d'une couche d'invar IV et d'une troisième couche épaisse en cuivre C2 profilée pour former un radiateur. FIG. 3 illustrates a first embodiment of a cooling device according to the invention. In this preferred variant, the colaminated material CL is, according to the main characteristic of the invention, consisting of a first layer of copper C1, a layer of invar IV and a third thick layer of copper C2 profiled to form a radiator.

Une brasure BR assure la liaison entre un substrat S porteur d'un élément dissipatif E et la première couche C1 du matériau colaminé CL. La couche en cuivre C2 est réalisée de façon à constituer un refroidisseur suffisamment rigide pour éliminer toute déformation mécanique du colaminé en fonction de la température (effet bilame) et présenter un bon couplage thermique avec le milieu ambiant Le matériau colaminé de la figure 3 peut être réalisé de sorte que la couche inférieure C2 soit profilée en forme de radiateur, un des rouleaux de laminage étant, par exemple, constitué d'une succession de galets espacés pour profiler les ailes. Une autre solution consiste à faire un matériau colaminé dont la couche C2 est d'épaisseur suffisante et à éliminer le métal superflu par extrusion ou autres procédés industriels.A solder BR provides the connection between a substrate S carrying a dissipative element E and the first layer C1 of the colaminated material CL. The copper layer C2 is produced so as to constitute a cooler which is sufficiently rigid to eliminate any mechanical deformation of the colamine as a function of the temperature (bimetallic strip effect) and have good thermal coupling with the ambient medium. The colamine material of FIG. 3 can be produced so that the lower layer C2 is profiled in the form of a radiator, one of the rolling rollers being, for example, constituted by a succession of spaced rollers for profiling the wings. Another solution consists in making a colaminated material whose layer C2 is of sufficient thickness and in eliminating the superfluous metal by extrusion or other industrial processes.

La figure 4 est une première variante de réalisation de dispositif de refroidissement selon l'invention dans laquelle des ailettes de refroidis sement AL sont rapportées sur la couche épaisse C2 du colaminé par brasage, collage ou autres procédés connus. FIG. 4 is a first alternative embodiment of a cooling device according to the invention in which cooling fins AL are attached to the thick layer C2 of the colamine by brazing, bonding or other known methods.

La figure 5 illustre une deuxième variante de l'invention dans laquelle la couche épaisse C2 du colaminé a été usinée pour servir de répartiteur de flux thermique et d'embase a un transistor, laquelle embase peut, à son tour, être fixée sur un radiateur conventionnel. Dans la technique connue, le substrat S est brasé sur un répartiteur de flux thermique en molybdène ayant le même coefficient de dilatation thermique que le substrat S. FIG. 5 illustrates a second variant of the invention in which the thick layer C2 of the colamine has been machined to serve as a heat flux distributor and as a base for a transistor, which base can, in turn, be fixed to a radiator conventional. In the known technique, the substrate S is brazed on a molybdenum heat flux distributor having the same coefficient of thermal expansion as the substrate S.

Le répartiteur en molybdène est brasé à son tour sur l'embase du transistor. Selon cet aspect de l'invention il est donc possible de remplacer le molybdène qui est un métal rare par un métal d'usage courant comme le cuivre et d'éliminer de surcroit une opération de brasage. The molybdenum distributor is in turn brazed on the base of the transistor. According to this aspect of the invention, it is therefore possible to replace molybdenum, which is a rare metal, with a metal in common use such as copper and to further eliminate a brazing operation.

La figure 6 illustre une troisième variante de l'invention dans laquelle la couche épaisse de cuivre C2 ne sert que de répartiteur de flux thermique, laquelle couche épaisse C2 est alors brasée sur une embase conventionnelle
EB de transistor.FIG. 6 illustrates a third variant of the invention in which the thick layer of copper C2 only serves as a heat flux distributor, which thick layer C2 is then brazed on a conventional base
Transistor EB.

La figure 7 est un boîtier pour microcircuit réalisé dans la couche épaisse du colaminé selon une des variantes de réalisation de l'invention. il s'agit à titre d'exemple, d'un circuit fonctionnant dans le domaine des hyperfréquences. Les éléments E placés sur le substrat S sont reliés à des bornes de liaison CO disposées sur les parois latérales du boîtier. Le substrat
S est brasé sur un plan de cuivre appartenant à la couche épaisse C2. La couche d'invar IV et la couche de cuivre Cl déterminent le coefficient de dilatation du plan sur lequel est fixé le substrat S. Les parois latérales assurent le refroidissement et la rigidité mécanique du boîtier, un couvercle
CV en assure l'étanchéité.Figure 7 is a microcircuit housing made in the thick layer of colaminate according to one of the alternative embodiments of the invention. this is, for example, a circuit operating in the microwave domain. The elements E placed on the substrate S are connected to connection terminals CO arranged on the side walls of the housing. The substrate
S is brazed on a copper plane belonging to the thick layer C2. The layer of invar IV and the layer of copper C1 determine the coefficient of expansion of the plane on which the substrate S. is fixed. The side walls provide cooling and mechanical rigidity of the housing, a cover
CV seals it.

La figure 8 est une vue plus détaillée du dispositif de refroidissement selon un aspect de l'invention tel que représenté de façon simplifiée par la figure 3. FIG. 8 is a more detailed view of the cooling device according to one aspect of the invention as shown in a simplified manner in FIG. 3.

Un substrat S comporte: les éléments du circuit tels que E, des points d'accès AC placés à la périphérie du substrat, des liaisons par fils ou par métallisation dudit substrat. Le substrat est brasé sur un colaminé cuivreinvar-cuivre dont la couche épaisse C2 assure de par sa forme le refroidissement et la rigidité de l'ensemble. Un couvercle CV, transparent pour la clarté de la figure, de dimensions inférieures à celles du substrat pour donner accès aux points d'entrée AC, assure la protection du circuit. A substrate S comprises: the elements of the circuit such as E, access points AC placed at the periphery of the substrate, connections by wires or by metallization of said substrate. The substrate is brazed on a copper-invar-copper colaminate whose thick layer C2 ensures by its shape the cooling and the rigidity of the whole. A cover CV, transparent for the clarity of the figure, of dimensions smaller than those of the substrate to give access to the AC entry points, ensures the protection of the circuit.

La figure 9 illustre un autre aspect de l'invention permettant d'améliorer la conductibilité thermique transversale du colaminé CL. FIG. 9 illustrates another aspect of the invention making it possible to improve the transverse thermal conductivity of colamine CL.

Des traversées T, dans une variante préférée en cuivre et cylindriques, ou de façon plus générale, en un matériau de conductibilité thermique supérieure à celle du colaminé, dans l'exemple illustré supérieure à celle de l'invar IV, sont placées dans l'épaisseur du colaminé. Dans une autre variante non représentée sur la figure les traversées peuvent être placées uniquement dans l'épaisseur de la couche centrale. La section et la répartition de ces traversées T sont choisies pour obtenir, en tenant compte des caractéristiques du colaminé CL retenu, un coéfficient de dilatation préétabli et l'augmentation de conductibilité thermique recherchée. Un tel colaminé peut être utilisé pour réaliser les différentes variantes de supports pour refroidissement et encapsulation de substrats selon l'invention décrites précédemment. D'autres colaminés réalisés en cuivre, en or, en argent, etc pour les couches externes dans une combinaison quelconque avec une couche centrale réalisée en invar, molybdène, titane, etc et autres variantes comportant plus de trois couches de métal peuvent être utilisés, l'invention n'étant pas limitée aux seules variantes décrites à titre d'illustration.  Bushings T, in a preferred copper and cylindrical variant, or more generally, in a material with thermal conductivity greater than that of colamine, in the example illustrated greater than that of invar IV, are placed in the thickness of colamine. In another variant not shown in the figure, the crossings can be placed only in the thickness of the central layer. The section and the distribution of these crossings T are chosen to obtain, taking into account the characteristics of the colamine CL selected, a pre-established coefficient of expansion and the desired increase in thermal conductivity. Such a colaminate can be used to produce the different variants of supports for cooling and encapsulation of substrates according to the invention described above. Other co-laminates made of copper, gold, silver, etc. for the outer layers in any combination with a central layer made of invar, molybdenum, titanium, etc. and other variants comprising more than three layers of metal can be used, the invention is not limited to only the variants described by way of illustration.

Claims (9)

REVENDICATIONS 1. Support en matériau colaminé pour le refroidissement et l'encapsulation d'un substrat (S) isolant ou semiconducteur sur lequel est disposé au moins une élément dissipatif (E) lequel substrat (S) est brasé sur une embase (CL) constituée d'au moins deux couches de métal superposées du type colaminé, caractérisé en ce qu'une des couches externes (C2) dudit colaminé a une épaisseur plus importante que l'autre couche externe (C1), l'épaisseur étant suffisante pour constituer un organe de refroidissement ou un organe d'encapsulation. 1. Support made of colaminated material for cooling and encapsulating an insulating or semiconductor substrate (S) on which is disposed at least one dissipative element (E) which substrate (S) is brazed on a base (CL) consisting of '' at least two superimposed layers of metal of the colamine type, characterized in that one of the outer layers (C2) of said colamine has a greater thickness than the other outer layer (C1), the thickness being sufficient to constitute an organ or an encapsulating member. 2. Support selon la revendication 1 caractérisé en ce qu'en outre le colaminé (CL) est muni de moyens pour augmenter sa conductibilité thermique transversale. 2. Support according to claim 1 characterized in that in addition the colaminate (CL) is provided with means for increasing its transverse thermal conductivity. 3. Support selon la revendication 2 caractérisé en ce que les moyens pour augmenter la conductibilité thermique transversale sont des traversées en métal (T) de conductibilité thermique supérieure à celle de colaminé (CL) et placées dans l'épaisseur de ce colaminé. 3. Support according to claim 2 characterized in that the means for increasing the transverse thermal conductivity are metal bushings (T) of thermal conductivity greater than that of colamine (CL) and placed in the thickness of this colamine. 4. Support selon la revendication 3 caractérisé en ce que les traversées (T) dispesées dans l'épaisseur du colaminé sont des tiges de section circulaire en cuivre. 4. Support according to claim 3 characterized in that the bushings (T) dispersed in the thickness of the colamine are rods of circular copper section. 5. Support selon l'une quelconque des revendications 1 à 4 caractérisés en ce que le colaminé (CL) comporte trois couches (A, B et C) de métal, les couches externes (A et C) étant réalisées en cuivre, en or ou en argent et la couche interne (B) en invar, en molybdène ou en titane. 5. Support according to any one of claims 1 to 4 characterized in that the colamine (CL) comprises three layers (A, B and C) of metal, the outer layers (A and C) being made of copper, gold or silver and the inner layer (B) invar, molybdenum or titanium. 6. Support selon l'une quelconque des revendications 1 à 5 caractérisé en ce que la couche épaisse de cuivre (C2) est profilée de manière à former un radiateur. 6. Support according to any one of claims 1 to 5 characterized in that the thick layer of copper (C2) is profiled so as to form a radiator. 7. Support selon l'une quelconque des revendications 1 à 5 caractérisé en ce que la couche épaisse de cuivre (C2) constitue l'embase d'un transistor ladite embase étant fixée sur un radiateur conventionnel. 7. Support according to any one of claims 1 to 5 characterized in that the thick layer of copper (C2) constitutes the base of a transistor, said base being fixed on a conventional radiator. 8. Support selon l'une quelconque des revendications 1 à 5 caractérisé en ce que la couche épaisse de cuivre (C2) est brasée sur une embase conventionnelle (EB) de transistor.  8. Support according to any one of claims 1 to 5 characterized in that the thick layer of copper (C2) is soldered on a conventional base (EB) of transistor. 9. Support selon l'une quelconque des revendications 1 à 5 caractérisé en ce que la couche épaisse (C2) comporte une cavité au fond de laquelle est brasé le substrat (SY à refroidir.  9. Support according to any one of claims 1 to 5 characterized in that the thick layer (C2) comprises a cavity at the bottom of which is brazed the substrate (SY to be cooled.
FR8115361A 1981-08-07 1981-08-07 Laminated support for cooling semiconductor - has three metal layers including one rigid layer to avoid bi-metallic bending with changing temp. Granted FR2511193A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8115361A FR2511193A1 (en) 1981-08-07 1981-08-07 Laminated support for cooling semiconductor - has three metal layers including one rigid layer to avoid bi-metallic bending with changing temp.

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FR8115361A FR2511193A1 (en) 1981-08-07 1981-08-07 Laminated support for cooling semiconductor - has three metal layers including one rigid layer to avoid bi-metallic bending with changing temp.

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FR2511193B1 FR2511193B1 (en) 1984-11-30

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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2544917A1 (en) * 1983-04-21 1984-10-26 Metalimphy ALLEGE SUPPORT FOR ELECTRONIC COMPONENTS
US4907125A (en) * 1987-07-03 1990-03-06 Siemens Aktiengesellschaft Circuit module including a plate-shaped circuit carrier of glass or ceramic
US4914551A (en) * 1988-07-13 1990-04-03 International Business Machines Corporation Electronic package with heat spreader member
EP0392109A2 (en) * 1989-03-03 1990-10-17 Sumitomo Special Metal Co., Ltd. Heat-conductive composite material
EP0437656A1 (en) * 1988-12-23 1991-07-24 Inco Limited Composite structure having a specific thermal coefficient of expansion
US5073840A (en) * 1988-10-06 1991-12-17 Microlithics Corporation Circuit board with coated metal support structure and method for making same
US5469329A (en) * 1994-08-08 1995-11-21 Ford Motor Company Printed circuit board with bi-metallic heat spreader
FR2844097A1 (en) * 2002-08-27 2004-03-05 Toyota Jidoshokki Kk Low expansion plate used for semiconductor device, includes plane perforated plate made of low expansion material in which through-holes are formed, and metal member filling the respective through-holes
US8359740B2 (en) 2008-12-19 2013-01-29 3D Plus Process for the wafer-scale fabrication of electronic modules for surface mounting
WO2015055899A1 (en) * 2013-10-18 2015-04-23 Griset Support for electronic power components, power module provided with such a support, and corresponding production method

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FR2396263A1 (en) * 1977-06-29 1979-01-26 Semi Alloys Inc HEAT TRANSMISSION PLATE, METAL, COMPOSITE AND PREFABRICATED

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FR2381388A1 (en) * 1977-02-17 1978-09-15 Varian Associates PACKAGING FOR HIGH POWER SEMICONDUCTOR DEVICES
FR2396263A1 (en) * 1977-06-29 1979-01-26 Semi Alloys Inc HEAT TRANSMISSION PLATE, METAL, COMPOSITE AND PREFABRICATED

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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2544917A1 (en) * 1983-04-21 1984-10-26 Metalimphy ALLEGE SUPPORT FOR ELECTRONIC COMPONENTS
EP0124428A1 (en) * 1983-04-21 1984-11-07 Imphy S.A. Lighter mounting for electronic components
US4907125A (en) * 1987-07-03 1990-03-06 Siemens Aktiengesellschaft Circuit module including a plate-shaped circuit carrier of glass or ceramic
US4914551A (en) * 1988-07-13 1990-04-03 International Business Machines Corporation Electronic package with heat spreader member
US5073840A (en) * 1988-10-06 1991-12-17 Microlithics Corporation Circuit board with coated metal support structure and method for making same
EP0437656A1 (en) * 1988-12-23 1991-07-24 Inco Limited Composite structure having a specific thermal coefficient of expansion
EP0392109A3 (en) * 1989-03-03 1991-01-09 Sumitomo Special Metal Co., Ltd. Heat-conductive composite material
EP0392109A2 (en) * 1989-03-03 1990-10-17 Sumitomo Special Metal Co., Ltd. Heat-conductive composite material
US5469329A (en) * 1994-08-08 1995-11-21 Ford Motor Company Printed circuit board with bi-metallic heat spreader
EP0696882A1 (en) 1994-08-08 1996-02-14 Ford Motor Company Printed circuit board with bi-metallic heat spreader
FR2844097A1 (en) * 2002-08-27 2004-03-05 Toyota Jidoshokki Kk Low expansion plate used for semiconductor device, includes plane perforated plate made of low expansion material in which through-holes are formed, and metal member filling the respective through-holes
US8359740B2 (en) 2008-12-19 2013-01-29 3D Plus Process for the wafer-scale fabrication of electronic modules for surface mounting
WO2015055899A1 (en) * 2013-10-18 2015-04-23 Griset Support for electronic power components, power module provided with such a support, and corresponding production method

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