JPS5291658A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5291658A JPS5291658A JP796076A JP796076A JPS5291658A JP S5291658 A JPS5291658 A JP S5291658A JP 796076 A JP796076 A JP 796076A JP 796076 A JP796076 A JP 796076A JP S5291658 A JPS5291658 A JP S5291658A
- Authority
- JP
- Japan
- Prior art keywords
- type
- semiconductor device
- type region
- network
- main surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000002411 adverse Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP796076A JPS5291658A (en) | 1976-01-29 | 1976-01-29 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP796076A JPS5291658A (en) | 1976-01-29 | 1976-01-29 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5291658A true JPS5291658A (en) | 1977-08-02 |
JPS5756780B2 JPS5756780B2 (US20100012521A1-20100121-C00001.png) | 1982-12-01 |
Family
ID=11680041
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP796076A Granted JPS5291658A (en) | 1976-01-29 | 1976-01-29 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5291658A (US20100012521A1-20100121-C00001.png) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60209044A (ja) * | 1984-03-30 | 1985-10-21 | 東洋紡績株式会社 | タイヤコ−ド用織物 |
JPS6134244A (ja) * | 1984-07-26 | 1986-02-18 | 東レ株式会社 | 樹脂補強用織物およびその製造方法 |
JPH0343268Y2 (US20100012521A1-20100121-C00001.png) * | 1987-04-11 | 1991-09-10 | ||
JPH0211173U (US20100012521A1-20100121-C00001.png) * | 1988-07-05 | 1990-01-24 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3465216A (en) * | 1966-07-22 | 1969-09-02 | Stanislas Teszner | Bistable semiconductor device for heavy currents |
-
1976
- 1976-01-29 JP JP796076A patent/JPS5291658A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3465216A (en) * | 1966-07-22 | 1969-09-02 | Stanislas Teszner | Bistable semiconductor device for heavy currents |
Also Published As
Publication number | Publication date |
---|---|
JPS5756780B2 (US20100012521A1-20100121-C00001.png) | 1982-12-01 |
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