JPS528797B1 - - Google Patents

Info

Publication number
JPS528797B1
JPS528797B1 JP46014125A JP1412571A JPS528797B1 JP S528797 B1 JPS528797 B1 JP S528797B1 JP 46014125 A JP46014125 A JP 46014125A JP 1412571 A JP1412571 A JP 1412571A JP S528797 B1 JPS528797 B1 JP S528797B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP46014125A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS528797B1 publication Critical patent/JPS528797B1/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP46014125A 1970-03-16 1971-03-16 Pending JPS528797B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1987870A 1970-03-16 1970-03-16

Publications (1)

Publication Number Publication Date
JPS528797B1 true JPS528797B1 (fr) 1977-03-11

Family

ID=21795534

Family Applications (1)

Application Number Title Priority Date Filing Date
JP46014125A Pending JPS528797B1 (fr) 1970-03-16 1971-03-16

Country Status (7)

Country Link
US (1) US3665888A (fr)
JP (1) JPS528797B1 (fr)
BE (1) BE764313A (fr)
FR (1) FR2084623A5 (fr)
GB (1) GB1345367A (fr)
NL (1) NL155458B (fr)
SE (1) SE387057B (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53271B1 (fr) * 1971-03-05 1978-01-06
US3933123A (en) * 1971-07-13 1976-01-20 U.S. Philips Corporation Liquid phase epitaxy
BE788374A (fr) * 1971-12-08 1973-01-02 Rca Corp Procede de depot d'une couche epitaxiale d'un materiau semi-conducteur sur la surface d'un substrat
JPS5318151B2 (fr) * 1971-12-14 1978-06-13
US3767481A (en) * 1972-04-07 1973-10-23 Rca Corp Method for epitaxially growing layers of a semiconductor material from the liquid phase
FR2202730A1 (en) * 1972-10-17 1974-05-10 Thomson Csf Heated reactor for growth of monocrystals - for producing photosensitive semiconductors, photo-transmitters, infrared detectors etc.
JPS5342230B2 (fr) * 1972-10-19 1978-11-09
US3762367A (en) * 1973-01-12 1973-10-02 Handotai Kenkyu Shinkokai Growth apparatus for a liquid growth multi-layer film
JPS5213510B2 (fr) * 1973-02-26 1977-04-14
US4033291A (en) * 1973-03-09 1977-07-05 Tokyo Shibaura Electric Co., Ltd. Apparatus for liquid-phase epitaxial growth
US3853643A (en) * 1973-06-18 1974-12-10 Bell Telephone Labor Inc Epitaxial growth of group iii-v semiconductors from solution
JPS5248949B2 (fr) * 1974-12-20 1977-12-13
US4028148A (en) * 1974-12-20 1977-06-07 Nippon Telegraph And Telephone Public Corporation Method of epitaxially growing a laminate semiconductor layer in liquid phase
US4110133A (en) * 1976-04-29 1978-08-29 The Post Office Growth of semiconductor compounds by liquid phase epitaxy
US4047986A (en) * 1976-05-10 1977-09-13 Integrated Display Systems, Inc. Epitaxial film formation of a light emitting diode and the product thereof
JPS5270759A (en) * 1976-12-25 1977-06-13 Toshiba Corp Liquid phase growth equipment
US4359012A (en) * 1978-01-19 1982-11-16 Handotai Kenkyu Shinkokai Apparatus for producing a semiconductor device utlizing successive liquid growth
US4235191A (en) * 1979-03-02 1980-11-25 Western Electric Company, Inc. Apparatus for depositing materials on stacked semiconductor wafers
NL185375C (nl) * 1980-01-16 1990-03-16 Philips Nv Inrichting voor het epitaxiaal aanbrengen van een laag halfgeleidermateriaal.
FR2476690A1 (fr) * 1980-02-27 1981-08-28 Radiotechnique Compelec Nacelle utilisable pour des depots epitaxiques en phase liquide et procede de depot mettant en jeu ladite nacelle
US4500367A (en) * 1983-10-31 1985-02-19 At&T Bell Laboratories LPE Growth on group III-V compound semiconductor substrates containing phosphorus
JP2001160540A (ja) * 1999-09-22 2001-06-12 Canon Inc 半導体装置の製造方法、液相成長法及び液相成長装置、太陽電池

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2727839A (en) * 1950-06-15 1955-12-20 Bell Telephone Labor Inc Method of producing semiconductive bodies
US3002821A (en) * 1956-10-22 1961-10-03 Texas Instruments Inc Means for continuous fabrication of graded junction transistors
DE1188555B (de) * 1960-05-10 1965-03-11 Wacker Chemie Gmbh Verfahren zur Herstellung hochreiner kristalliner Koerper aus Nitriden, Phosphiden oder Arseniden der III. Hauptgruppe des Periodensystems
BE632279A (fr) * 1962-05-14
FR1473984A (fr) * 1966-01-10 1967-03-24 Radiotechnique Coprim Rtc Procédé et dispositif destinés à la fabrication de composés binaires monocristallins
US3449087A (en) * 1966-06-27 1969-06-10 Commerce Usa Purification by selective crystallization and remelt
US3551219A (en) * 1968-05-09 1970-12-29 Bell Telephone Labor Inc Epitaxial growth technique

Also Published As

Publication number Publication date
FR2084623A5 (fr) 1971-12-17
US3665888A (en) 1972-05-30
DE2111945B2 (de) 1977-02-10
NL7103419A (fr) 1971-09-20
NL155458B (nl) 1978-01-16
SE387057B (sv) 1976-08-30
DE2111945A1 (de) 1971-09-23
GB1345367A (en) 1974-01-30
BE764313A (fr) 1971-09-16

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