FR2202730A1 - Heated reactor for growth of monocrystals - for producing photosensitive semiconductors, photo-transmitters, infrared detectors etc. - Google Patents

Heated reactor for growth of monocrystals - for producing photosensitive semiconductors, photo-transmitters, infrared detectors etc.

Info

Publication number
FR2202730A1
FR2202730A1 FR7236708A FR7236708A FR2202730A1 FR 2202730 A1 FR2202730 A1 FR 2202730A1 FR 7236708 A FR7236708 A FR 7236708A FR 7236708 A FR7236708 A FR 7236708A FR 2202730 A1 FR2202730 A1 FR 2202730A1
Authority
FR
France
Prior art keywords
monocrystals
transmitters
photo
growth
infrared detectors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7236708A
Other languages
French (fr)
Other versions
FR2202730B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7236708A priority Critical patent/FR2202730A1/en
Publication of FR2202730A1 publication Critical patent/FR2202730A1/en
Application granted granted Critical
Publication of FR2202730B1 publication Critical patent/FR2202730B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/08—Heating of the reaction chamber or the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The reactor comprises a horizontal, cylindrical furnace having two superimposed, independently-controlled, heaters to give a sharp temp. gradient within a refractory furnace tube contg. a monocrystal baseplate. The baseplate is brought into contact with a Liq. phase from which crystal growth takes place while, at the same time, the tube is filled with a vapour from particles vapourised in an adjacent pre-heating furnace equipment with its own heater. The reactor offers a unit for repeated use to replace quartz reactors.
FR7236708A 1972-10-17 1972-10-17 Heated reactor for growth of monocrystals - for producing photosensitive semiconductors, photo-transmitters, infrared detectors etc. Granted FR2202730A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7236708A FR2202730A1 (en) 1972-10-17 1972-10-17 Heated reactor for growth of monocrystals - for producing photosensitive semiconductors, photo-transmitters, infrared detectors etc.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7236708A FR2202730A1 (en) 1972-10-17 1972-10-17 Heated reactor for growth of monocrystals - for producing photosensitive semiconductors, photo-transmitters, infrared detectors etc.

Publications (2)

Publication Number Publication Date
FR2202730A1 true FR2202730A1 (en) 1974-05-10
FR2202730B1 FR2202730B1 (en) 1975-06-13

Family

ID=9105757

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7236708A Granted FR2202730A1 (en) 1972-10-17 1972-10-17 Heated reactor for growth of monocrystals - for producing photosensitive semiconductors, photo-transmitters, infrared detectors etc.

Country Status (1)

Country Link
FR (1) FR2202730A1 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2084623A5 (en) * 1970-03-16 1971-12-17 Western Electric Co

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2084623A5 (en) * 1970-03-16 1971-12-17 Western Electric Co

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
REVUE I.B.M. TECHNICAL DISCLOSURE BULLETIN, VOLUME 13 1970 NO. 5, PAGES 1195-6, ARTICLE "FABRICATION OF ALLOY SEMICONDUCTORS USING A VAPOR LIQUID SOLID PHASE EPITAXIAL PROCESS"DE J.M.BLUM ET AL) *

Also Published As

Publication number Publication date
FR2202730B1 (en) 1975-06-13

Similar Documents

Publication Publication Date Title
FR2202730A1 (en) Heated reactor for growth of monocrystals - for producing photosensitive semiconductors, photo-transmitters, infrared detectors etc.
GB1036596A (en) Improvements in apparatus for gas chromatography
JPS5275177A (en) Vapor growth device
JPS51111476A (en) Method of liquid phase epitaxial crystal growth
GB963158A (en) Improvements in or relating to methods of producing monocrystals
DE3877486D1 (en) DEVICE FOR DRAWING SINGLE CRYSTALS.
GB932504A (en) Method and apparatus for growing single crystals
FR2114105A5 (en) Epitaxial radiation heated reactor - including a quartz reaction chamber
JPS5571616A (en) Vapor phase growing treatment method
FR2144093A5 (en) Horizontal zone smelter - for crystal growth in crucible esp monocrystalline semiconductor
FR2205719A1 (en) Induction heater unit for glass filament spinner - comprising a silicone rubber body lined with ceramic plates
JPS5274578A (en) Liquid phase crystal growth apparatus
GB903412A (en) Improvements in devices for use in crystal-pulling apparatus
SU146282A1 (en) Device for growing monocrystalline films from the vapor phase of a substance
JPS5275176A (en) Method for vapor phase epitaxial growth
JPS56100122A (en) Diamond synthesizing method
FR2352587A1 (en) Furnace for crystal growing - has screen movable progressively between heated wall and crucible, giving controllable, vibrationless crystallisation
GB849285A (en) Improvements in or relating to apparatus and methods for zone melting solids
JPS5734031A (en) Method and apparatus for decreasing number of bubbles in formed quartz glass
FR2433970A1 (en) Single crystal drawing appts. - using a crucible which is rotated in a heater within a sealed chamber
JPS56120600A (en) Vapor phase growing method
JPS51145949A (en) High frequency induction heating device
KALISKI Laser heating of plasma by heat conductivity mechanism taking into account the recovery of fusion energy(Laser heating of plasma based on thermal conductivity mechanism, considering nuclear microfusion energy recovery)
BE590366A (en) Method and device for the mass production of glass rods and tubes, comprising a heating zone and a cooling zone surrounding a mandrel inclined downwards.
GB1087259A (en) Process for producing furan

Legal Events

Date Code Title Description
ST Notification of lapse