FR2144093A5 - Horizontal zone smelter - for crystal growth in crucible esp monocrystalline semiconductor - Google Patents

Horizontal zone smelter - for crystal growth in crucible esp monocrystalline semiconductor

Info

Publication number
FR2144093A5
FR2144093A5 FR7123925A FR7123925A FR2144093A5 FR 2144093 A5 FR2144093 A5 FR 2144093A5 FR 7123925 A FR7123925 A FR 7123925A FR 7123925 A FR7123925 A FR 7123925A FR 2144093 A5 FR2144093 A5 FR 2144093A5
Authority
FR
France
Prior art keywords
crucible
smelter
esp
crystal growth
monocrystalline semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7123925A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7123925A priority Critical patent/FR2144093A5/en
Application granted granted Critical
Publication of FR2144093A5 publication Critical patent/FR2144093A5/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/62—Heating elements specially adapted for furnaces
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D11/00—Arrangement of elements for electric heating in or on furnaces
    • F27D11/02—Ohmic resistance heating

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The elongated horizontal crucible charged with the poly crystalline raw semiconductor material is enclosed in a sealed e.g. quartz tube filled with protective gas and placed in the open topped cavity of a muffle with uniformly distributed axially parallel radiant heater elements. Localized heating to form the travelling molten zone is by a coil surrounding the envelope and fixed to a travelling carriage with the necessary inspection window. The single turn coil has two half turns fed in parallel, the upper being of smaller cross sectional area than the lower (dia. ratio appros. 2:3). This creates a vertical temp. gradient in the crucible and a convex melt interface and hence a better crystal.
FR7123925A 1971-06-30 1971-06-30 Horizontal zone smelter - for crystal growth in crucible esp monocrystalline semiconductor Expired FR2144093A5 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7123925A FR2144093A5 (en) 1971-06-30 1971-06-30 Horizontal zone smelter - for crystal growth in crucible esp monocrystalline semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7123925A FR2144093A5 (en) 1971-06-30 1971-06-30 Horizontal zone smelter - for crystal growth in crucible esp monocrystalline semiconductor

Publications (1)

Publication Number Publication Date
FR2144093A5 true FR2144093A5 (en) 1973-02-09

Family

ID=9079608

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7123925A Expired FR2144093A5 (en) 1971-06-30 1971-06-30 Horizontal zone smelter - for crystal growth in crucible esp monocrystalline semiconductor

Country Status (1)

Country Link
FR (1) FR2144093A5 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2671446A1 (en) * 1991-01-08 1992-07-10 Alsthom Cge Alcatel Heating device for a chamber for deposition under partial vacuum of thin films on a substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2671446A1 (en) * 1991-01-08 1992-07-10 Alsthom Cge Alcatel Heating device for a chamber for deposition under partial vacuum of thin films on a substrate

Similar Documents

Publication Publication Date Title
ES413942A1 (en) Methods of preparing ceramic material
GB1311028A (en) Producing monocrystals
GB1286024A (en) Method of producing single semiconductor crystals
FR2144093A5 (en) Horizontal zone smelter - for crystal growth in crucible esp monocrystalline semiconductor
GB790954A (en) Method of cleaning semiconductor material
GB986748A (en) Zone-by-zone melting of a rod of semi-conductor material
GB1079870A (en) A method of melting a rod of crystalline material zone-by-zone
SE8502375D0 (en) METHOD AND DEVICE FOR WRAPPONING OF MONOCRISTALLIC SILICON STARS
GB1267459A (en) Manufacture of striation-free quartz glass articles
US3929556A (en) Nucleating growth of lead-tin-telluride single crystal with an oriented barium fluoride substrate
GB1358817A (en) None-crucible zone melting of rods of crystalline material
GB1375132A (en)
FR2122768A5 (en) Ruby single crystals - prodn in cold crucibles in an oxidising atmos
JPS5210807A (en) Process and apparatus for zone melting of semiconductor crystal rod without aid of crucible
FR2294746A1 (en) Large perfect (silicon) semiconductor monocrystalline prods prodn - by non-crucible zone melting from monocrystalline seed (BE180676)
JPS5562881A (en) Production of multicomponent semiconductor crystal
FR2055843A5 (en) Crucible glass melting furnace
GB876337A (en) Thermoelectric devices
JPS60255690A (en) Production of semiconductor crystal
GB838035A (en) Polishing hard crystalline carbon
ZA715667B (en) A method of producing silicon or silicon alloys by reducing silica-containing materials in a melting furnace
GB1206457A (en) A process for cultivating mono-crystals containing niobium or tantalum
GB931692A (en) A process for doping semi-conductor material with boron
CA834694A (en) Method of growing rod-shaped dislocation-free monocrystals, particularly of silicon, by crucible-free floating zone melting
GB1322975A (en) Methods of producing single crystals of semiconductor material

Legal Events

Date Code Title Description
ST Notification of lapse