US3665888A - Horizontal liquid phase crystal growth apparatus - Google Patents

Horizontal liquid phase crystal growth apparatus Download PDF

Info

Publication number
US3665888A
US3665888A US19878A US3665888DA US3665888A US 3665888 A US3665888 A US 3665888A US 19878 A US19878 A US 19878A US 3665888D A US3665888D A US 3665888DA US 3665888 A US3665888 A US 3665888A
Authority
US
United States
Prior art keywords
melt
substrate
slider
pedestal
boat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US19878A
Other languages
English (en)
Inventor
Arpad Albert Bergh
Carl Ralph Paola
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Bell Telephone Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bell Telephone Laboratories Inc filed Critical Bell Telephone Laboratories Inc
Application granted granted Critical
Publication of US3665888A publication Critical patent/US3665888A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions

Definitions

  • ABSTRACT A horizontal liquid phase crystal growth apparatus which incorporates a heat sink means is described.
  • the apparatus includes a boat for housing a melt which is in contact with a slider used for accommodating a source material.
  • the slider is in contact with a pedestal used for holding a substrate.
  • the melt and the substrate are isolated from one another at different stages of the growth process by means of the slider.
  • the boat is heated to a growth temperature and the slider is then moved so as to effect saturation of the melt with the source material.
  • the slider is then moved again to contact the substrate with the source-saturated melt. Growth is then initiated from a convection-free melt by cooling the pedestal and, thus, the substrate by means of a heat sink which establishes a thermal gradient along the vertical axis of the container.
  • convective currents in the melt during regrowth result in (I) an irregular thickness of the regrown surface, (2) a variable doping profile over the regrown layer, and (3) a damaged interface between the substrate and the regrown layer. If cooling starts at the top of the melt or if regrowth is initiated at the top, gravity causes the heavier solution to sink and form convective cells. To avoid convection, a vertical temperature gradient must be established with a decreasing temperature toward the lowest part of the system. However, the' apparatus should have a horizontal temperature gradient of zero in order to obtain a uniform thickness of the regrown layer.
  • the present invention is directed to a horizontal liquid phase crystal growth apparatus.
  • the apparatus is one which optimizes the liquid phase crystal growth by (l) maintaining the free volume surrounding the substrate at a minimum, (2) physically segregating the substrate from the melt prior to growth, 3) preventing melt-substrate contact at the liquid-gas interface and (4) providing a vertical thermal gradient whereby the substrate is maintained at the lowest temperature.
  • the horizontal apparatus consists of a boat for containing a melt, said boat having a lid to prevent the evaporation of volatile components.
  • a slider In intimate contact with the boat is a slider which has a well for accommodating a source mixture.
  • the slider combines the source mixture with the melt to form a source-saturated melt when the boat is maintained at a growth temperature.
  • the slider has a conduit passageway or opening for channeling the source-saturated melt into contact with a substrate when the substrate and the melt are maintained at the growth temperature.
  • the slider is in slideable contact with a base or pedestal having a first compartment for accommodating the substrate and a second compartment for accommodating any excess of thesaturated melt when the growth process is terminated by means of the slider. Contacting the pedestal is a heat-sink means which insures deposition from a convection-free melt.
  • a suitable substrate is placed into the first compartment of the pedestal.
  • the slider is placed upon the pedestal whereupon the boat is placed upon the slider.
  • the source material is then placed in the slider well and the melt mixture isplaced in the boat and covered with the lid.
  • the boat,'with the lid in place, the slider and pedestal are then placed in a furnace and the boat is heated to pre-saturate and dope the resultant melt.
  • the slider is then moved so that the melt comes in contact with the source material to form a source saturated melt.
  • the temperature of the melt and the substrate, contained in the boat and the pedestal, respectively, are maintained at the growth temperature and the slider is moved again so that the conduit opening is in alignment with both the source-saturated melt and the substrate thereby permitting contact therebetween.
  • Crystal growth is then initiated from the saturated melt by cooling the substrate, employing a heat-sink means.
  • a vertical temperature gradient is established via the heat sink to insure deposition from a convection-free melt.
  • the growth process can be terminated in a controlled fashion at any time by moving the slider so as to separate the source-saturated melt from the substrate.
  • FIG. 1 is a perspective view of the pedestal, slider, and the boatof the invention
  • FIG. 2 is a perspective view of the slider slid into place with respect to the pedestal;
  • FIG. 3 is a perspective view of the assembled pedestal, slider and boat within a horizontal furnace
  • FIG. 4A is a cross-sectional view of the crystal growth ap- DETAILED DESCRIPTION
  • the present invention has been described largely in terms of the epitaxial growth of p-type Galv on a substrate of p-type GaP. However, it will be understood that suchdescription is for purposes of exposition and not for purposes of limitation. It will be readily appreciated that the inventive concept described is equally applicable to non-epitaxial as well as epitaxial growth and to crystal growth of non-semiconductor materials as well as semiconductor materials. Also the inventive concept described is applicable to many combinations of substrate and melt whereby both homojunctions and heterojunctions are formed.
  • the materials may be selected from among groups Ill(a) V(a) compounds, groups (12) VI(a) compounds or group IV elements of the Periodic Table of the Elements as set forth in the Mendelyeev Periodic Table appearing on page B2 of the 45th edition of the Handbook of Chemistry and Physics, published by the Chemical Rubber Company.
  • a pedestal 41 which can be fabricated from any inert material including such materials as high purity graphite, alumina, quartz, boron nitride, or any inert ceramic material. It is to be understood that all of the above-mentioned materials, including graphite, may or may not be employed with a high purity graphite liner (not shown).
  • the base 42 of the pedestal 41 has a first compartment 43 destined for accommodating a suitable substrate 44 (FIG. 2), flushly with its walls 46.
  • the base 42 has a second compartment or reservoir 47 destined for accommodating a portion of a suitable crystal growth melt 45 (FIG. 415) when the crystal growth is terminated.
  • the sides 48-48 and base 42 of the pedestal 41 define a slide surface 49 which is the top surface of the base 42.
  • the slide surface 49 is destined for accommodating a slider 51 which is made of the above-mentioned inert materials.
  • the slider 51 comprises a base 52 having a member 53 perpendicular thereto on one end thereof.
  • the base 52 has a well 54 destined for accommodating a source mixture 56 (FIG. 2).
  • Extending through the base 52 is a channeling conduit or aperture 57 which is destined for channeling the melt 45 (FIG. 4D) employed in the crystal growth to the substrate 44.
  • the boat 59 which is made of the above-mentioned inert materials, has a first compartment 61 destined for holding a melt mixture 62 (FIG. 3) and a channeling compartment 63 destined to be loaded with the source mixture 56 for channeling to well 54 (FIG. 4A). Separating compartment 61 from compartment 63 is a spacer compartment 60. The bottom 68 of compartment 60 is destined to serve as a cover for well 54 during stages of the crystal growth procedure (FIG. 4B).
  • the boat 59 has two ridges 64-64 on opposed sides, which are designed to fit into and slide along the grooved slideways 58-58.
  • Covering compartment 61 is a lid 65 which is constructed of the above-mentioned inert materials and which serves to prevent the evaporation of volatile elements from melt 62 (FIG. 4B) and melt 45 (FIG.4C).
  • the slider 51 prior to crystal growth, the slider 51 is placed at one end 67 of the pedestal 41 and slid along slide surface 49 to a predetermined point.
  • the slider 51 is destined to pass over and cover compartment 43 containing substrate 44 (FIG. 4B).
  • substrate 44 the top surface of the substrate 44 is almost flush with the slide surface 49 of the base 42. Therefore, when the slider 51 covers the substrate 44, the free volume surrounding the substrate 44 is thereby maintained at a minimum. This minimization of the free volume decreases the elemental loss due to evaporation from the substrate 44.
  • the free volume should be such as to ideally restrict the loss to one monolayer of the surface of the substrate 44. Therefore, the free volume allowed is dependent upon the substrate material chosen and the partial vapor pressures involved.
  • the assembled pedestal 41, slider 51 and boat 59 are destined for placement into a standard horizontal furnace 74.
  • a heat exchanger 77 is incorporated in the furnace 74.
  • the heat exchanger 77 is in contact with the base 42 contiguous to compartment 43 containing the sub- .strate 44. Gas maintained at a low temperature is introduced via inlet and outlet means (not shown) through the heat exchanger 77.
  • inlet and outlet means not shown
  • a suitable p-type doped GaP substrate material grown by standard liquid encapsulated pulling techniques was cut to size. It was lapped and cleaned in accordance with conventional techniques. Referring to FIG. 1, the lapped and cleaned GaP substrate 44 was inserted into a compartment 43 of a high purity graphite pedestal 41.
  • a slider 51 fabricated of high purity graphite was slid to a predetermined point along the slide surface 49, into contact with the pedestal 41.
  • a high purity graphite boat 59 was then slid onto the slider 51 by inserting ridges 6464 into slideway 58-58, as shown in FIG. 3.
  • the boat 59 was slid along slider 51 until channeling compartment 63 was in alignment with well 54.
  • the optimal wall thickness for graphite construction was a maximum of oneeighth of an inch.
  • a source mixture 56 of Ga,0, and GaP was prepared by first weighing out 0.2 grams of high purity Ga,O obtained from commercial sources. The high resistivity GaP material was cut and 0.2 grams was added to the previously weighted out Ga O thus forming the source mixture 56. The source mixture 56 was then placed in compartment 63 and thus channeled into well 54.
  • a galliumGaP-Ga,O -Zn melt 'mixture 62 was prepared by first weighing out 8 grams of high purity gallium, 0.2 grams zinc, and 0.1 grams 611,0 obtained from commercial sources. To this was added 0.1 grams GaP. The resultant mixture was placed in compartment 61 of boat 59. The combined amount of Ga? present in the melt mixture 62 and the source mixture 56 was such as to give a GaP saturated gallium solution doped with oxygen and zinc at the growth temperature of 980 C.
  • a high purity graphite lid 65 was placed over compartment 61 and into contact with the melt mixture 62, and stop bars 50 and 55 were placed into slots 71 and 72, respectively. It is to be noted that the loading and assembly of the pedestal 41, slider 51 and boat 59 was done in a chamber (not shown) in which a dry and inert ambient was maintained. The loaded assembly was thereupon placed into a standard horizontal furnace 74, as shown in FIGS. 3 and 4A.
  • the slider 51 and thereupon boat 59 were moved by pushing one end of the base 52 of the slider 51 so as to align compartment 61 of boat'59 with compartment 43 of the pedestal 41, thereby aligning the substrate 44 with melt mixture 62.
  • boat 59 was now abutting stop bar 50 and was thus prevented from any further movement forward.
  • the furnace 74 was heated to the growth temperature of 980 C thereby forming a melt 62.
  • the bottom 68 of the spacer compartment 60 acts as a lid which covers well 54 and the source mixture 56.
  • the free volume surrounding the source mixture 56 was thus kept at a minimum thereby preventing volatilization loss from the source mixture 56.
  • the slider 51 covers the substrate 44 and maintains the free volume surrounding the substrate 44 to a minimum.
  • slider 51' was moved forward. Since the boat 59 is abutting stop bar 50, the bar 50 prevents the boat 59 from moving forward with the slider 51.
  • the slider 51 was moved so as to align compartment 61 with well 54 and thus combine the melt 62 contained in compartment 61 (FIG. 48), with the source 56,
  • the slider 51 was maintained in its position until thermal equilibrium was established between the substrate 44 and the source-saturated melt 45. Referring to FIG. 4D the slider 51 was moved forward again. The boat 59 was prevented from moving by the stop bar 50 and when compartment 61 was aligned with the conduit or aperture 57 of the slider 51, the source saturated melt 45 was channeled into contact with the substrate 44. The substrate 44 and the source-saturated melt 45 were at the same temperature and, therefore, neither deposition on the substrate 44 nor dissolution of the substrate occurred. The substrate was also prevented from surface contamination via contact with the surface of the melt.
  • a cooled inert gas, such as N was flowed through the heat exchanger 77 by means not shown. This caused the temperature of the base 42 contiguous to compartment 43 and substrate 44 to be lowered. This cooling established a vertical temperature gradient along the vertical axis of the pedestal 41 contiguous to compartment 43, with both the base 42 and the substrate 44 having the lowest temperature. Crystal growth was thus initiated by cooling the source-saturated melt 45.
  • the growth process was terminated in a controlled manner, as illustrated in FIG. 4B, by pulling the slider 51 back and thus separating the source-saturated melt 45 from the substrate 44.
  • the layer of source-saturated melt 45 trapped in the slider 51 is deposited into the reservoir 47.
  • the GaP substrate 44 was kept in contact with the melt 45 from to 60 minutes leading to a grown crystal layer of from one-fourth to 3 mils.
  • the slider 51 was pulled back, so that member 53 contacted boat 59 which in turn abutted stop bar 55 thereby enabling the assembled pedestal 41, slider 51 and boat 59 to be extracted.
  • Horizontal liquid phase crystal growth apparatus including (a) a pedestal having a first chamber for accommodating a substrate member and a second chamber for accommodating a portion of a crystal growth melt, (b) a slide member comprising a base having a well for accommodating a source solution and a channeling conduit for channeling a melt to the first chamber of said pedestal, (c) a boat having a covered first compartment for containing a melt mixture, a second compartment for channeling a source solution to the well of said slider and a spacer compartment intermediate said first and second compartments, and (d) means for heating said boat, said pedestal being in intimate contact with said sliding member which in turn is in intimate contact with said boat, the pedestal also being in contact with heat sink means for establishing a vertical thermal gradient along the vertical axis of said pedestal.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
US19878A 1970-03-16 1970-03-16 Horizontal liquid phase crystal growth apparatus Expired - Lifetime US3665888A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1987870A 1970-03-16 1970-03-16

Publications (1)

Publication Number Publication Date
US3665888A true US3665888A (en) 1972-05-30

Family

ID=21795534

Family Applications (1)

Application Number Title Priority Date Filing Date
US19878A Expired - Lifetime US3665888A (en) 1970-03-16 1970-03-16 Horizontal liquid phase crystal growth apparatus

Country Status (7)

Country Link
US (1) US3665888A (fr)
JP (1) JPS528797B1 (fr)
BE (1) BE764313A (fr)
FR (1) FR2084623A5 (fr)
GB (1) GB1345367A (fr)
NL (1) NL155458B (fr)
SE (1) SE387057B (fr)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3753801A (en) * 1971-12-08 1973-08-21 Rca Corp Method of depositing expitaxial semiconductor layers from the liquid phase
US3762367A (en) * 1973-01-12 1973-10-02 Handotai Kenkyu Shinkokai Growth apparatus for a liquid growth multi-layer film
US3767481A (en) * 1972-04-07 1973-10-23 Rca Corp Method for epitaxially growing layers of a semiconductor material from the liquid phase
US3783825A (en) * 1971-03-05 1974-01-08 Matsushita Electric Ind Co Ltd Apparatus for the liquid-phase epitaxial growth of multi-layer wafers
US3853643A (en) * 1973-06-18 1974-12-10 Bell Telephone Labor Inc Epitaxial growth of group iii-v semiconductors from solution
US3854447A (en) * 1972-10-19 1974-12-17 Matsushita Electric Ind Co Ltd Apparatus for deposition of semiconductor thin layers
US3933123A (en) * 1971-07-13 1976-01-20 U.S. Philips Corporation Liquid phase epitaxy
US4013040A (en) * 1974-12-20 1977-03-22 Nippon Telegraph And Telephone Public Corporation Apparatus for epitaxially growing a laminate semiconductor layer in liquid phase
US4016829A (en) * 1973-02-26 1977-04-12 Hitachi, Ltd. Apparatus for crystal growth
US4028148A (en) * 1974-12-20 1977-06-07 Nippon Telegraph And Telephone Public Corporation Method of epitaxially growing a laminate semiconductor layer in liquid phase
JPS5270759A (en) * 1976-12-25 1977-06-13 Toshiba Corp Liquid phase growth equipment
US4033291A (en) * 1973-03-09 1977-07-05 Tokyo Shibaura Electric Co., Ltd. Apparatus for liquid-phase epitaxial growth
US4047986A (en) * 1976-05-10 1977-09-13 Integrated Display Systems, Inc. Epitaxial film formation of a light emitting diode and the product thereof
US4110133A (en) * 1976-04-29 1978-08-29 The Post Office Growth of semiconductor compounds by liquid phase epitaxy
US4235191A (en) * 1979-03-02 1980-11-25 Western Electric Company, Inc. Apparatus for depositing materials on stacked semiconductor wafers
US4347097A (en) * 1971-12-14 1982-08-31 Handotai Kenkyu Shinkokou Method and apparatus for producing a multilayer semiconductor device utilizing liquid growth
US4357897A (en) * 1980-01-16 1982-11-09 U.S. Philips Corporation Device for epitaxially providing a layer of semiconductor material
US4359012A (en) * 1978-01-19 1982-11-16 Handotai Kenkyu Shinkokai Apparatus for producing a semiconductor device utlizing successive liquid growth
US4500367A (en) * 1983-10-31 1985-02-19 At&T Bell Laboratories LPE Growth on group III-V compound semiconductor substrates containing phosphorus
US6566277B1 (en) * 1999-09-22 2003-05-20 Canon Kabushiki Kaisha Liquid-phase growth method, liquid-phase growth apparatus, and solar cell

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2202730A1 (en) * 1972-10-17 1974-05-10 Thomson Csf Heated reactor for growth of monocrystals - for producing photosensitive semiconductors, photo-transmitters, infrared detectors etc.
FR2476690A1 (fr) * 1980-02-27 1981-08-28 Radiotechnique Compelec Nacelle utilisable pour des depots epitaxiques en phase liquide et procede de depot mettant en jeu ladite nacelle

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2727839A (en) * 1950-06-15 1955-12-20 Bell Telephone Labor Inc Method of producing semiconductive bodies
US3002821A (en) * 1956-10-22 1961-10-03 Texas Instruments Inc Means for continuous fabrication of graded junction transistors
US3077384A (en) * 1960-05-10 1963-02-12 Wacker Chemie Gmbh Process for manufacturing indium phosphide and gallium arsenide of high purity
US3158512A (en) * 1962-05-14 1964-11-24 Rca Corp Semiconductor devices and methods of making them
US3449087A (en) * 1966-06-27 1969-06-10 Commerce Usa Purification by selective crystallization and remelt
US3507625A (en) * 1966-01-10 1970-04-21 Philips Corp Apparatus for producing binary crystalline compounds
US3551219A (en) * 1968-05-09 1970-12-29 Bell Telephone Labor Inc Epitaxial growth technique

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2727839A (en) * 1950-06-15 1955-12-20 Bell Telephone Labor Inc Method of producing semiconductive bodies
US3002821A (en) * 1956-10-22 1961-10-03 Texas Instruments Inc Means for continuous fabrication of graded junction transistors
US3077384A (en) * 1960-05-10 1963-02-12 Wacker Chemie Gmbh Process for manufacturing indium phosphide and gallium arsenide of high purity
US3158512A (en) * 1962-05-14 1964-11-24 Rca Corp Semiconductor devices and methods of making them
US3507625A (en) * 1966-01-10 1970-04-21 Philips Corp Apparatus for producing binary crystalline compounds
US3449087A (en) * 1966-06-27 1969-06-10 Commerce Usa Purification by selective crystallization and remelt
US3551219A (en) * 1968-05-09 1970-12-29 Bell Telephone Labor Inc Epitaxial growth technique

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3783825A (en) * 1971-03-05 1974-01-08 Matsushita Electric Ind Co Ltd Apparatus for the liquid-phase epitaxial growth of multi-layer wafers
US3933123A (en) * 1971-07-13 1976-01-20 U.S. Philips Corporation Liquid phase epitaxy
US3753801A (en) * 1971-12-08 1973-08-21 Rca Corp Method of depositing expitaxial semiconductor layers from the liquid phase
US4347097A (en) * 1971-12-14 1982-08-31 Handotai Kenkyu Shinkokou Method and apparatus for producing a multilayer semiconductor device utilizing liquid growth
US3767481A (en) * 1972-04-07 1973-10-23 Rca Corp Method for epitaxially growing layers of a semiconductor material from the liquid phase
US3854447A (en) * 1972-10-19 1974-12-17 Matsushita Electric Ind Co Ltd Apparatus for deposition of semiconductor thin layers
US3762367A (en) * 1973-01-12 1973-10-02 Handotai Kenkyu Shinkokai Growth apparatus for a liquid growth multi-layer film
US4016829A (en) * 1973-02-26 1977-04-12 Hitachi, Ltd. Apparatus for crystal growth
US4033291A (en) * 1973-03-09 1977-07-05 Tokyo Shibaura Electric Co., Ltd. Apparatus for liquid-phase epitaxial growth
US3853643A (en) * 1973-06-18 1974-12-10 Bell Telephone Labor Inc Epitaxial growth of group iii-v semiconductors from solution
US4013040A (en) * 1974-12-20 1977-03-22 Nippon Telegraph And Telephone Public Corporation Apparatus for epitaxially growing a laminate semiconductor layer in liquid phase
US4028148A (en) * 1974-12-20 1977-06-07 Nippon Telegraph And Telephone Public Corporation Method of epitaxially growing a laminate semiconductor layer in liquid phase
US4110133A (en) * 1976-04-29 1978-08-29 The Post Office Growth of semiconductor compounds by liquid phase epitaxy
US4047986A (en) * 1976-05-10 1977-09-13 Integrated Display Systems, Inc. Epitaxial film formation of a light emitting diode and the product thereof
JPS5270759A (en) * 1976-12-25 1977-06-13 Toshiba Corp Liquid phase growth equipment
JPS5610779B2 (fr) * 1976-12-25 1981-03-10
US4359012A (en) * 1978-01-19 1982-11-16 Handotai Kenkyu Shinkokai Apparatus for producing a semiconductor device utlizing successive liquid growth
US4235191A (en) * 1979-03-02 1980-11-25 Western Electric Company, Inc. Apparatus for depositing materials on stacked semiconductor wafers
US4357897A (en) * 1980-01-16 1982-11-09 U.S. Philips Corporation Device for epitaxially providing a layer of semiconductor material
US4500367A (en) * 1983-10-31 1985-02-19 At&T Bell Laboratories LPE Growth on group III-V compound semiconductor substrates containing phosphorus
US6566277B1 (en) * 1999-09-22 2003-05-20 Canon Kabushiki Kaisha Liquid-phase growth method, liquid-phase growth apparatus, and solar cell

Also Published As

Publication number Publication date
FR2084623A5 (fr) 1971-12-17
DE2111945B2 (de) 1977-02-10
JPS528797B1 (fr) 1977-03-11
NL7103419A (fr) 1971-09-20
NL155458B (nl) 1978-01-16
SE387057B (sv) 1976-08-30
DE2111945A1 (de) 1971-09-23
GB1345367A (en) 1974-01-30
BE764313A (fr) 1971-09-16

Similar Documents

Publication Publication Date Title
US3665888A (en) Horizontal liquid phase crystal growth apparatus
US5704985A (en) Device and a method for epitaxially growing objects by CVD
KR20060036370A (ko) 기체 투과성 도가니 벽을 이용하여 ａｉｎ 단결정을제조하기 위한 방법 및 장치
US4439267A (en) Vapor-phase method for growing mercury cadmium telluride
JP2001518706A (ja) インプランテーションによってドープされたシリコンカーバード半導体を熱的に回復させる方法
US6030661A (en) Device and a method for epitaxially growing objects by CVD
US3715245A (en) Selective liquid phase epitaxial growth process
US5922126A (en) Semiconductor liquid phase epitaxial growth method and apparatus, and its wafer holder
US4365588A (en) Fixture for VPE reactor
US3759759A (en) Push pull method for solution epitaxial growth of iii v compounds
US4026735A (en) Method for growing thin semiconducting epitaxial layers
US3648653A (en) Liquid phase crystal growth apparatus
US3649193A (en) Method of forming and regularly growing a semiconductor compound
US3648654A (en) Vertical liquid phase crystal growth apparatus
US4227962A (en) Prevention of decomposition of phosphorous containing substrates during an epitaxial growth sequence
US4135952A (en) Process for annealing semiconductor materials
US3697330A (en) Liquid epitaxy method and apparatus
JP4022997B2 (ja) ３−５族化合物半導体結晶へのＺｎ拡散方法及び拡散装置
US3785884A (en) Method for depositing a semiconductor material on the substrate from the liquid phase
US3990392A (en) Epitaxial growth apparatus
JPS5864131A (ja) 分子ビ−ムによつて物質層を形成する方法
US3290181A (en) Method of producing pure semiconductor material by chemical transport reaction using h2s/h2 system
US3589336A (en) Horizontal liquid phase epitaxy apparatus
US3925117A (en) Method for the two-stage epitaxial growth of iii' v semiconductor compounds
JP2008300603A (ja) 半導体製造装置