JPS5287368A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5287368A JPS5287368A JP419176A JP419176A JPS5287368A JP S5287368 A JPS5287368 A JP S5287368A JP 419176 A JP419176 A JP 419176A JP 419176 A JP419176 A JP 419176A JP S5287368 A JPS5287368 A JP S5287368A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- production
- atmosphere
- thereafter
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP419176A JPS5287368A (en) | 1976-01-17 | 1976-01-17 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP419176A JPS5287368A (en) | 1976-01-17 | 1976-01-17 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5287368A true JPS5287368A (en) | 1977-07-21 |
Family
ID=11577795
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP419176A Pending JPS5287368A (en) | 1976-01-17 | 1976-01-17 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5287368A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5522835A (en) * | 1978-08-03 | 1980-02-18 | Matsushita Electronics Corp | Manufacturing of transistor |
-
1976
- 1976-01-17 JP JP419176A patent/JPS5287368A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5522835A (en) * | 1978-08-03 | 1980-02-18 | Matsushita Electronics Corp | Manufacturing of transistor |
JPS5939908B2 (ja) * | 1978-08-03 | 1984-09-27 | 松下電子工業株式会社 | トランジスタの製造方法 |
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