JPS5270759A - Liquid phase growth equipment - Google Patents
Liquid phase growth equipmentInfo
- Publication number
- JPS5270759A JPS5270759A JP15695576A JP15695576A JPS5270759A JP S5270759 A JPS5270759 A JP S5270759A JP 15695576 A JP15695576 A JP 15695576A JP 15695576 A JP15695576 A JP 15695576A JP S5270759 A JPS5270759 A JP S5270759A
- Authority
- JP
- Japan
- Prior art keywords
- liquid phase
- phase growth
- growth equipment
- substrate
- equipment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15695576A JPS5270759A (en) | 1976-12-25 | 1976-12-25 | Liquid phase growth equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15695576A JPS5270759A (en) | 1976-12-25 | 1976-12-25 | Liquid phase growth equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5270759A true JPS5270759A (en) | 1977-06-13 |
JPS5610779B2 JPS5610779B2 (ja) | 1981-03-10 |
Family
ID=15638971
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15695576A Granted JPS5270759A (en) | 1976-12-25 | 1976-12-25 | Liquid phase growth equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5270759A (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0314597Y2 (ja) * | 1985-02-27 | 1991-04-02 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1299610A (en) * | 1918-03-23 | 1919-04-08 | Felix Przybysz | Fire-extinguisher. |
US3665888A (en) * | 1970-03-16 | 1972-05-30 | Bell Telephone Labor Inc | Horizontal liquid phase crystal growth apparatus |
JPS4910668A (ja) * | 1972-05-23 | 1974-01-30 |
-
1976
- 1976-12-25 JP JP15695576A patent/JPS5270759A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1299610A (en) * | 1918-03-23 | 1919-04-08 | Felix Przybysz | Fire-extinguisher. |
US3665888A (en) * | 1970-03-16 | 1972-05-30 | Bell Telephone Labor Inc | Horizontal liquid phase crystal growth apparatus |
JPS4910668A (ja) * | 1972-05-23 | 1974-01-30 |
Also Published As
Publication number | Publication date |
---|---|
JPS5610779B2 (ja) | 1981-03-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5270759A (en) | Liquid phase growth equipment | |
JPS5285165A (en) | Preparation of indoles | |
JPS5384457A (en) | Liquid-phase epitaxial growth method | |
JPS5211860A (en) | Liquid phase epitaxial device | |
JPS52135264A (en) | Liquid phase epitaxial growth method | |
JPS5429152A (en) | Cooling liquid | |
JPS5312776A (en) | Crystallizer | |
JPS53458A (en) | Cooling device of ebullition type | |
JPS5259568A (en) | Liquid phase epitaxial growth | |
JPS5381487A (en) | Method and apparatus for liquid phase epitaxial growth | |
JPS532747A (en) | Boiling and cooling device | |
JPS5337211A (en) | Condenser | |
JPS52124377A (en) | Temperature detector | |
JPS52118650A (en) | Liquid tank | |
JPS51114383A (en) | Liquid phase epitaxial crystal growth | |
JPS51126037A (en) | Semiconductor crystal growth method | |
JPS5378165A (en) | Cutting method for semiconductor substrate | |
JPS5338250A (en) | Transistor circuit | |
JPS5425280A (en) | Sliding liquid phase epitaxial growth apparatus | |
JPS5376657A (en) | Liquid phase epitaxial growth method | |
JPS5247581A (en) | Liquid phase epitxial growth method | |
JPS5258461A (en) | Liquid phase epitaxial device | |
JPS52114294A (en) | Cryogenic temperature device | |
JPS52103952A (en) | Liquid phase epitaxial crowth method of semiconductor crystal | |
JPS52112276A (en) | Liquid-phase epitaxial growth system |