JPS5265664A - Selective introduction of impurity in compound semiconductor substrate - Google Patents
Selective introduction of impurity in compound semiconductor substrateInfo
- Publication number
- JPS5265664A JPS5265664A JP14271475A JP14271475A JPS5265664A JP S5265664 A JPS5265664 A JP S5265664A JP 14271475 A JP14271475 A JP 14271475A JP 14271475 A JP14271475 A JP 14271475A JP S5265664 A JPS5265664 A JP S5265664A
- Authority
- JP
- Japan
- Prior art keywords
- impurity
- semiconductor substrate
- compound semiconductor
- selective introduction
- selective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012535 impurity Substances 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 title abstract 2
- 150000001875 compounds Chemical class 0.000 title 1
- 230000008021 deposition Effects 0.000 abstract 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14271475A JPS5265664A (en) | 1975-11-26 | 1975-11-26 | Selective introduction of impurity in compound semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14271475A JPS5265664A (en) | 1975-11-26 | 1975-11-26 | Selective introduction of impurity in compound semiconductor substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5265664A true JPS5265664A (en) | 1977-05-31 |
| JPS5751922B2 JPS5751922B2 (index.php) | 1982-11-05 |
Family
ID=15321856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14271475A Granted JPS5265664A (en) | 1975-11-26 | 1975-11-26 | Selective introduction of impurity in compound semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5265664A (index.php) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5595322A (en) * | 1979-01-12 | 1980-07-19 | Nec Corp | Diffusing method of impurity |
| JPS55105380A (en) * | 1979-02-07 | 1980-08-12 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| US4843033A (en) * | 1985-09-27 | 1989-06-27 | Texas Instruments Incorporated | Method for outdiffusion of zinc into III-V substrates using zinc tungsten silicide as dopant source |
-
1975
- 1975-11-26 JP JP14271475A patent/JPS5265664A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5595322A (en) * | 1979-01-12 | 1980-07-19 | Nec Corp | Diffusing method of impurity |
| JPS55105380A (en) * | 1979-02-07 | 1980-08-12 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| US4843033A (en) * | 1985-09-27 | 1989-06-27 | Texas Instruments Incorporated | Method for outdiffusion of zinc into III-V substrates using zinc tungsten silicide as dopant source |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5751922B2 (index.php) | 1982-11-05 |
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