JPS526478A - Manufacturing method for semiconductor integrated circuit - Google Patents

Manufacturing method for semiconductor integrated circuit

Info

Publication number
JPS526478A
JPS526478A JP8326775A JP8326775A JPS526478A JP S526478 A JPS526478 A JP S526478A JP 8326775 A JP8326775 A JP 8326775A JP 8326775 A JP8326775 A JP 8326775A JP S526478 A JPS526478 A JP S526478A
Authority
JP
Japan
Prior art keywords
manufacturing
integrated circuit
semiconductor integrated
elements formed
electric characteristics
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8326775A
Other languages
Japanese (ja)
Inventor
Hideyuki Kondo
Kenichiro Uono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8326775A priority Critical patent/JPS526478A/en
Publication of JPS526478A publication Critical patent/JPS526478A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To have different electric characteristics on one portion of plural semiconductor elements formed on semiconductor substrate and to avoid interaction each other, by use of ion injection application.
JP8326775A 1975-07-07 1975-07-07 Manufacturing method for semiconductor integrated circuit Pending JPS526478A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8326775A JPS526478A (en) 1975-07-07 1975-07-07 Manufacturing method for semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8326775A JPS526478A (en) 1975-07-07 1975-07-07 Manufacturing method for semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS526478A true JPS526478A (en) 1977-01-18

Family

ID=13797568

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8326775A Pending JPS526478A (en) 1975-07-07 1975-07-07 Manufacturing method for semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS526478A (en)

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