JPS5261180A - Horizontal growth of crystal ribbons - Google Patents

Horizontal growth of crystal ribbons

Info

Publication number
JPS5261180A
JPS5261180A JP50136841A JP13684175A JPS5261180A JP S5261180 A JPS5261180 A JP S5261180A JP 50136841 A JP50136841 A JP 50136841A JP 13684175 A JP13684175 A JP 13684175A JP S5261180 A JPS5261180 A JP S5261180A
Authority
JP
Japan
Prior art keywords
horizontal growth
crystal ribbons
ribbons
crystal
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50136841A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5720278B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Tarou Sudou
Hiroshi Kudou
Satoshi Tamai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOUYOU SHIRIKON KK
TOYO SHIRIKON KK
Original Assignee
TOUYOU SHIRIKON KK
TOYO SHIRIKON KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TOUYOU SHIRIKON KK, TOYO SHIRIKON KK filed Critical TOUYOU SHIRIKON KK
Priority to JP50136841A priority Critical patent/JPS5261180A/ja
Publication of JPS5261180A publication Critical patent/JPS5261180A/ja
Priority to US05/864,489 priority patent/US4264407A/en
Priority to US05/864,745 priority patent/US4226834A/en
Publication of JPS5720278B2 publication Critical patent/JPS5720278B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/06—Non-vertical pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
    • Y10T117/1048—Pulling includes a horizontal component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP50136841A 1975-11-14 1975-11-14 Horizontal growth of crystal ribbons Granted JPS5261180A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP50136841A JPS5261180A (en) 1975-11-14 1975-11-14 Horizontal growth of crystal ribbons
US05/864,489 US4264407A (en) 1975-11-14 1977-12-27 Lateral pulling growth of crystal ribbons and apparatus therefor
US05/864,745 US4226834A (en) 1975-11-14 1977-12-27 Lateral pulling growth of crystal ribbons and apparatus therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50136841A JPS5261180A (en) 1975-11-14 1975-11-14 Horizontal growth of crystal ribbons

Publications (2)

Publication Number Publication Date
JPS5261180A true JPS5261180A (en) 1977-05-20
JPS5720278B2 JPS5720278B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-04-27

Family

ID=15184746

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50136841A Granted JPS5261180A (en) 1975-11-14 1975-11-14 Horizontal growth of crystal ribbons

Country Status (2)

Country Link
US (2) US4226834A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5261180A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4366024A (en) * 1979-01-26 1982-12-28 Heliotronic Forschungs-Und Entwicklungsgesellschaft Fur Solarzellen-Grundstoffe Mbh Process for making solar cell base material
JPS6437490A (en) * 1987-08-03 1989-02-08 Toshiba Ceramics Co Silicon single crystal pulling-up apparatus
CN104011270A (zh) * 2011-11-09 2014-08-27 瓦里安半导体设备公司 使用异向性材料的热负载平衡
JP2017533165A (ja) * 2014-10-17 2017-11-09 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 融液上に成長した結晶シートの厚さを制御する装置および方法

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2914506A1 (de) * 1979-04-10 1980-10-16 Siemens Ag Verfahren zum herstellen von grossflaechigen, plattenfoermigen siliziumkristallen mit kolumnarstruktur
US4417944A (en) * 1980-07-07 1983-11-29 Jewett David N Controlled heat sink for crystal ribbon growth
FR2512847B1 (fr) * 1981-09-14 1986-07-04 Energy Materials Corp Procede et appareil pour la fabrication de rubans cristallins
DE3231326A1 (de) * 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen
DE3306515A1 (de) * 1983-02-24 1984-08-30 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen
US4650541A (en) * 1984-09-12 1987-03-17 The United States Of America As Represented By The United States Department Of Energy Apparatus and method for the horizontal, crucible-free growth of silicon sheet crystals
US4599132A (en) * 1985-01-18 1986-07-08 Energy Materials Corporation Guidance system for low angle silicon ribbon growth
US4873063A (en) * 1986-01-06 1989-10-10 Bleil Carl E Apparatus for zone regrowth of crystal ribbons
US4749438A (en) * 1986-01-06 1988-06-07 Bleil Carl E Method and apparatus for zone recrystallization
US4775443A (en) * 1986-02-06 1988-10-04 Bleil Carl E Method and apparatus for zone regrowth of crystal ribbons from bulk material
DE3806001A1 (de) * 1988-02-25 1989-09-07 Siemens Ag Anordnung zum vollstaendigen entleeren von mit siliziumschmelze gefuellten quarzwannen oder -tiegeln nach dem siliziumbandziehen
US5993540A (en) * 1995-06-16 1999-11-30 Optoscint, Inc. Continuous crystal plate growth process and apparatus
US6800137B2 (en) 1995-06-16 2004-10-05 Phoenix Scientific Corporation Binary and ternary crystal purification and growth method and apparatus
US6402840B1 (en) 1999-08-10 2002-06-11 Optoscint, Inc. Crystal growth employing embedded purification chamber
US7572334B2 (en) * 2006-01-03 2009-08-11 Applied Materials, Inc. Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application
US7855087B2 (en) * 2008-03-14 2010-12-21 Varian Semiconductor Equipment Associates, Inc. Floating sheet production apparatus and method
US8064071B2 (en) * 2008-03-14 2011-11-22 Varian Semiconductor Equipment Associates, Inc. Floating sheet measurement apparatus and method
US7816153B2 (en) * 2008-06-05 2010-10-19 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for producing a dislocation-free crystalline sheet
US9567691B2 (en) * 2008-06-20 2017-02-14 Varian Semiconductor Equipment Associates, Inc. Melt purification and delivery system
US8545624B2 (en) * 2008-06-20 2013-10-01 Varian Semiconductor Equipment Associates, Inc. Method for continuous formation of a purified sheet from a melt
US8475591B2 (en) * 2008-08-15 2013-07-02 Varian Semiconductor Equipment Associates, Inc. Method of controlling a thickness of a sheet formed from a melt
US7998224B2 (en) 2008-10-21 2011-08-16 Varian Semiconductor Equipment Associates, Inc. Removal of a sheet from a production apparatus
US8603242B2 (en) * 2009-02-26 2013-12-10 Uri Cohen Floating semiconductor foils
US8501139B2 (en) * 2009-02-26 2013-08-06 Uri Cohen Floating Si and/or Ge foils
US9267219B2 (en) 2010-05-06 2016-02-23 Varian Semiconductor Equipment Associates, Inc. Gas-lift pumps for flowing and purifying molten silicon
US8685162B2 (en) 2010-05-06 2014-04-01 Varian Semiconductor Equipment Associates, Inc. Removing a sheet from the surface of a melt using gas jets
US8764901B2 (en) 2010-05-06 2014-07-01 Varian Semiconductor Equipment Associates, Inc. Removing a sheet from the surface of a melt using elasticity and buoyancy
US9057146B2 (en) * 2010-08-24 2015-06-16 Varian Semiconductor Equipment Associates, Inc. Eddy current thickness measurement apparatus
US20120211917A1 (en) * 2011-02-23 2012-08-23 Evergreen Solar, Inc. Wafer Furnace with Variable Flow Gas Jets
US9970125B2 (en) 2012-02-17 2018-05-15 Varian Semiconductor Equipment Associates, Inc. Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt
US9957636B2 (en) 2014-03-27 2018-05-01 Varian Semiconductor Equipment Associates, Inc. System and method for crystalline sheet growth using a cold block and gas jet
US9587324B2 (en) 2014-05-12 2017-03-07 Varian Semiconductor Equipment Associates, Inc. Apparatus for processing a melt
US10179958B2 (en) 2016-09-16 2019-01-15 Varian Semiconductor Equipment Associates, Inc Apparatus and method for crystalline sheet growth
WO2020231971A1 (en) * 2019-05-13 2020-11-19 Leading Edge Crystal Technologies, Inc. Exposure of a silicon ribbon to gas in a furnace
US11719619B2 (en) * 2020-02-26 2023-08-08 United States Of America As Represented By The Secretary Of The Army System and method for testing adhesion of brittle materials
US11421340B2 (en) * 2020-02-26 2022-08-23 United States Of America As Represented By The Secretary Of The Army Vertical draw system and method for surface adhesion of crystalline materials

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1130414B (de) * 1959-04-10 1962-05-30 Elektronik M B H Verfahren und Vorrichtung zum Ziehen von Einkristallen
US3124489A (en) * 1960-05-02 1964-03-10 Method of continuously growing thin strip crystals
US3086758A (en) * 1961-06-29 1963-04-23 Robert A Greene Apparatus for carburetion
US3353914A (en) * 1964-12-30 1967-11-21 Martin Marietta Corp Method of seed-pulling beta silicon carbide crystals from a melt containing silver and the product thereof
US3293002A (en) * 1965-10-19 1966-12-20 Siemens Ag Process for producing tape-shaped semiconductor bodies
US3370927A (en) * 1966-02-28 1968-02-27 Westinghouse Electric Corp Method of angularly pulling continuous dendritic crystals
US3759671A (en) * 1971-10-15 1973-09-18 Gen Motors Corp Horizontal growth of crystal ribbons
US4130611A (en) * 1976-12-06 1978-12-19 Yarway Corporation Attemperator

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4366024A (en) * 1979-01-26 1982-12-28 Heliotronic Forschungs-Und Entwicklungsgesellschaft Fur Solarzellen-Grundstoffe Mbh Process for making solar cell base material
JPS6437490A (en) * 1987-08-03 1989-02-08 Toshiba Ceramics Co Silicon single crystal pulling-up apparatus
CN104011270A (zh) * 2011-11-09 2014-08-27 瓦里安半导体设备公司 使用异向性材料的热负载平衡
CN104011270B (zh) * 2011-11-09 2017-05-10 瓦里安半导体设备公司 使硅晶体衬底生长的装置及方法
JP2017533165A (ja) * 2014-10-17 2017-11-09 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 融液上に成長した結晶シートの厚さを制御する装置および方法

Also Published As

Publication number Publication date
JPS5720278B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-04-27
US4226834A (en) 1980-10-07
US4264407A (en) 1981-04-28

Similar Documents

Publication Publication Date Title
JPS5261180A (en) Horizontal growth of crystal ribbons
JPS51117199A (en) Method of making single crystal
JPS5287291A (en) Cultivation of keratinocyte
GB1539244A (en) Manufacture of silicon crystals
GB1539731A (en) Growth of plants
JPS5252185A (en) Pullluppgrowth of silicone crystals
JPS5245948A (en) Improvement of liquid crystal display configuration
JPS5271170A (en) Method of making mostly single crystal ribon
GB1557287A (en) Growing semiconductor crystals
JPS51149181A (en) Pullluppgrowth of single crystal materials
JPS52105206A (en) Novel crystal form of 22*44*22froyl*piperazinee11il**44aminoo6* 77dimethoxychinazolin hydrochloride
JPS5268079A (en) Highly smooth epitaxial crystal growth
IL50922A0 (en) Crystal growth method
JPS5494478A (en) Manufacture of high purity silicon single crystal
EG12225A (en) Protective material made of crystals
JPS5242479A (en) Continuous fabrication of determineddform single crystals and apparatus therefor
JPS51151299A (en) Method of making single crystal galliumnitride
JPS5470335A (en) Preparation of linear transsquinacridone gammaamodified crystal
GB1545966A (en) Crystal growing furnace
JPS5261179A (en) Horizontal growth of single crystal ribbons
JPS5234094A (en) Prodvction of glass cloth tape
JPS51133106A (en) Apparatus for production of single crystals
JPS5250857A (en) Culture of mushroom
JPS5224838A (en) Cultivation of plant
JPS5280281A (en) Horizontal growth of crystal ribbons