JPS5260300A - Method of growing stngle crystal epitaxial layer of rear earth metalltron garnet - Google Patents

Method of growing stngle crystal epitaxial layer of rear earth metalltron garnet

Info

Publication number
JPS5260300A
JPS5260300A JP51119902A JP11990276A JPS5260300A JP S5260300 A JPS5260300 A JP S5260300A JP 51119902 A JP51119902 A JP 51119902A JP 11990276 A JP11990276 A JP 11990276A JP S5260300 A JPS5260300 A JP S5260300A
Authority
JP
Japan
Prior art keywords
metalltron
stngle
garnet
growing
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51119902A
Other languages
English (en)
Other versions
JPS5745719B2 (ja
Inventor
Matsukei Roberutoson Jiyon
Chiyadouitsuku Purisu Jiyon
Edowaado Deibiizu Jiyon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS5260300A publication Critical patent/JPS5260300A/ja
Publication of JPS5745719B2 publication Critical patent/JPS5745719B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/062—Vertical dipping system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)
  • Compounds Of Iron (AREA)
JP51119902A 1975-10-07 1976-10-07 Method of growing stngle crystal epitaxial layer of rear earth metalltron garnet Granted JPS5260300A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB40990/75A GB1520138A (en) 1975-10-07 1975-10-07 Growing single crystal garnets

Publications (2)

Publication Number Publication Date
JPS5260300A true JPS5260300A (en) 1977-05-18
JPS5745719B2 JPS5745719B2 (ja) 1982-09-29

Family

ID=10417598

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51119902A Granted JPS5260300A (en) 1975-10-07 1976-10-07 Method of growing stngle crystal epitaxial layer of rear earth metalltron garnet

Country Status (5)

Country Link
US (1) US4077832A (ja)
JP (1) JPS5260300A (ja)
DE (1) DE2643793C2 (ja)
FR (1) FR2326975A1 (ja)
GB (1) GB1520138A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52126699A (en) * 1976-04-16 1977-10-24 Agency Of Ind Science & Technol Process for liquid phase epitaxial growth
JP2007112643A (ja) * 2005-10-18 2007-05-10 Tdk Corp 単結晶の製造方法
JP2007217278A (ja) * 2004-11-19 2007-08-30 Tdk Corp 磁性ガーネット単結晶及びそれを用いた光学素子並びに磁性ガーネット単結晶の製造方法
JP2008143738A (ja) * 2006-12-08 2008-06-26 Fdk Corp 磁性ガーネット単結晶及びその製造方法
JP2008273776A (ja) * 2007-04-27 2008-11-13 Tdk Corp 磁性ガーネット単結晶及びそれを用いたファラデー回転子

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4202930A (en) * 1978-02-10 1980-05-13 Allied Chemical Corporation Lanthanum indium gallium garnets
US4191365A (en) * 1979-03-02 1980-03-04 Burroughs Corporation Horizontal/inclined substrate holder for liquid phase epitaxy
US4243472A (en) * 1979-03-02 1981-01-06 Burroughs Corporation Method for liquid phase epitaxy multiple dipping of wafers for bubble film growth
JPS59164692A (ja) * 1983-03-10 1984-09-17 Nippon Hoso Kyokai <Nhk> 酸化物単結晶の製造方法
US4544438A (en) * 1984-05-31 1985-10-01 At&T Bell Laboratories Liquid phase epitaxial growth of bismuth-containing garnet films
DE3617404A1 (de) * 1986-05-23 1987-11-26 Telefunken Electronic Gmbh Verfahren zum epitaktischen abscheiden duenner einkristalliner halbleiterschichten aus pseudobinaerem halbleitermaterial auf einem einkristallinen substrat
JPH0354198A (ja) * 1989-07-20 1991-03-08 Shin Etsu Chem Co Ltd 酸化物ガーネット単結晶
US5322591A (en) * 1991-03-26 1994-06-21 The United States Of America As Represented By The Secretary Of The Air Force Hydrothermal growth on non-linear optical crystals
JP2000357622A (ja) * 1999-06-16 2000-12-26 Murata Mfg Co Ltd 磁性ガーネット単結晶膜の製造方法、および磁性ガーネット単結晶膜
US7133189B2 (en) * 2002-02-22 2006-11-07 Tdk Corporation Magnetic garnet material, faraday rotator, optical device, bismuth-substituted rare earth-iron-garnet single-crystal film and method for producing the same and crucible for producing the same
TWI300811B (en) * 2004-11-19 2008-09-11 Tdk Corp Magnetic garnet single crystal and optical device using the same, and method of single crystal
US7695562B2 (en) * 2006-01-10 2010-04-13 Tdk Corporation Magnetic garnet single crystal and method for producing the same as well as optical element using the same
JP4720730B2 (ja) * 2006-01-27 2011-07-13 Ｔｄｋ株式会社 光学素子の製造方法
JP4702090B2 (ja) * 2006-02-20 2011-06-15 Ｔｄｋ株式会社 磁性ガーネット単結晶及びそれを用いた光学素子
US7758766B2 (en) 2007-09-17 2010-07-20 Tdk Corporation Magnetic garnet single crystal and Faraday rotator using the same
CN114853077B (zh) * 2022-05-12 2023-09-05 闽都创新实验室 一种铁氧体粉体及其制备方法和应用

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1233261A (fr) * 1959-08-03 1960-10-12 Diora Procédé de préparation de monocristaux de grenats de terres rares
US3150925A (en) * 1961-04-20 1964-09-29 Richard J Gambino Method of growing single crystals
US3177145A (en) * 1963-02-04 1965-04-06 Ibm Manganese copper ferrite composition containing titanium and germanium and method ofpreparation
US3281363A (en) * 1963-07-10 1966-10-25 Bell Telephone Labor Inc Bismuth-containing garnets and their preparation
US3479132A (en) * 1967-08-10 1969-11-18 Ampex Transparent magnetic spinel crystal of mixed oxide of lithium iron and vanadium
US3638207A (en) * 1969-11-17 1972-01-25 Bell Telephone Labor Inc Magnetic devices
US3654162A (en) * 1970-10-01 1972-04-04 Gte Laboratories Inc Ferrimagnetic iron garnet having large faraday effect
US3666665A (en) * 1970-12-14 1972-05-30 Ibm Composition of ferroelectric matter
NL160659C (nl) * 1972-01-08 1979-11-15 Philips Nv Magneto-optische inrichting.
JPS5225000B2 (ja) * 1972-08-11 1977-07-05
US3915661A (en) * 1974-06-17 1975-10-28 Allied Chem Process and apparatus for growth of crystals

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52126699A (en) * 1976-04-16 1977-10-24 Agency Of Ind Science & Technol Process for liquid phase epitaxial growth
JP2007217278A (ja) * 2004-11-19 2007-08-30 Tdk Corp 磁性ガーネット単結晶及びそれを用いた光学素子並びに磁性ガーネット単結晶の製造方法
JP2007112643A (ja) * 2005-10-18 2007-05-10 Tdk Corp 単結晶の製造方法
JP2008143738A (ja) * 2006-12-08 2008-06-26 Fdk Corp 磁性ガーネット単結晶及びその製造方法
JP2008273776A (ja) * 2007-04-27 2008-11-13 Tdk Corp 磁性ガーネット単結晶及びそれを用いたファラデー回転子

Also Published As

Publication number Publication date
GB1520138A (en) 1978-08-02
FR2326975B1 (ja) 1979-07-20
JPS5745719B2 (ja) 1982-09-29
DE2643793A1 (de) 1977-05-12
DE2643793C2 (de) 1983-01-13
FR2326975A1 (fr) 1977-05-06
US4077832A (en) 1978-03-07

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