JPS5745719B2 - - Google Patents
Info
- Publication number
- JPS5745719B2 JPS5745719B2 JP51119902A JP11990276A JPS5745719B2 JP S5745719 B2 JPS5745719 B2 JP S5745719B2 JP 51119902 A JP51119902 A JP 51119902A JP 11990276 A JP11990276 A JP 11990276A JP S5745719 B2 JPS5745719 B2 JP S5745719B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/062—Vertical dipping system
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Thin Magnetic Films (AREA)
- Compounds Of Iron (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB40990/75A GB1520138A (en) | 1975-10-07 | 1975-10-07 | Growing single crystal garnets |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5260300A JPS5260300A (en) | 1977-05-18 |
JPS5745719B2 true JPS5745719B2 (ja) | 1982-09-29 |
Family
ID=10417598
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51119902A Granted JPS5260300A (en) | 1975-10-07 | 1976-10-07 | Method of growing stngle crystal epitaxial layer of rear earth metalltron garnet |
Country Status (5)
Country | Link |
---|---|
US (1) | US4077832A (ja) |
JP (1) | JPS5260300A (ja) |
DE (1) | DE2643793C2 (ja) |
FR (1) | FR2326975A1 (ja) |
GB (1) | GB1520138A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7695562B2 (en) | 2006-01-10 | 2010-04-13 | Tdk Corporation | Magnetic garnet single crystal and method for producing the same as well as optical element using the same |
US7758766B2 (en) | 2007-09-17 | 2010-07-20 | Tdk Corporation | Magnetic garnet single crystal and Faraday rotator using the same |
US8142676B2 (en) | 2006-02-20 | 2012-03-27 | Tdk Corporation | Magnetic garnet single crystal and optical element using the same |
US8815011B2 (en) | 2004-11-19 | 2014-08-26 | Tdk Corporation | Magnetic garnet single crystal and optical element using same as well as method of producing single crystal |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52126699A (en) * | 1976-04-16 | 1977-10-24 | Agency Of Ind Science & Technol | Process for liquid phase epitaxial growth |
US4202930A (en) * | 1978-02-10 | 1980-05-13 | Allied Chemical Corporation | Lanthanum indium gallium garnets |
US4243472A (en) * | 1979-03-02 | 1981-01-06 | Burroughs Corporation | Method for liquid phase epitaxy multiple dipping of wafers for bubble film growth |
US4191365A (en) * | 1979-03-02 | 1980-03-04 | Burroughs Corporation | Horizontal/inclined substrate holder for liquid phase epitaxy |
JPS59164692A (ja) * | 1983-03-10 | 1984-09-17 | Nippon Hoso Kyokai <Nhk> | 酸化物単結晶の製造方法 |
US4544438A (en) * | 1984-05-31 | 1985-10-01 | At&T Bell Laboratories | Liquid phase epitaxial growth of bismuth-containing garnet films |
DE3617404A1 (de) * | 1986-05-23 | 1987-11-26 | Telefunken Electronic Gmbh | Verfahren zum epitaktischen abscheiden duenner einkristalliner halbleiterschichten aus pseudobinaerem halbleitermaterial auf einem einkristallinen substrat |
JPH0354198A (ja) * | 1989-07-20 | 1991-03-08 | Shin Etsu Chem Co Ltd | 酸化物ガーネット単結晶 |
US5322591A (en) * | 1991-03-26 | 1994-06-21 | The United States Of America As Represented By The Secretary Of The Air Force | Hydrothermal growth on non-linear optical crystals |
JP2000357622A (ja) * | 1999-06-16 | 2000-12-26 | Murata Mfg Co Ltd | 磁性ガーネット単結晶膜の製造方法、および磁性ガーネット単結晶膜 |
US7133189B2 (en) * | 2002-02-22 | 2006-11-07 | Tdk Corporation | Magnetic garnet material, faraday rotator, optical device, bismuth-substituted rare earth-iron-garnet single-crystal film and method for producing the same and crucible for producing the same |
JP4807288B2 (ja) * | 2004-11-19 | 2011-11-02 | Tdk株式会社 | 磁性ガーネット単結晶及びそれを用いた光学素子並びに磁性ガーネット単結晶の製造方法 |
JP4867281B2 (ja) * | 2005-10-18 | 2012-02-01 | Tdk株式会社 | 単結晶の製造方法 |
JP4720730B2 (ja) * | 2006-01-27 | 2011-07-13 | Tdk株式会社 | 光学素子の製造方法 |
JP4942029B2 (ja) * | 2006-12-08 | 2012-05-30 | Fdk株式会社 | 磁性ガーネット単結晶及びその製造方法 |
JP4844464B2 (ja) * | 2007-04-27 | 2011-12-28 | Tdk株式会社 | 磁性ガーネット単結晶及びそれを用いたファラデー回転子 |
CN114853077B (zh) * | 2022-05-12 | 2023-09-05 | 闽都创新实验室 | 一种铁氧体粉体及其制备方法和应用 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1233261A (fr) * | 1959-08-03 | 1960-10-12 | Diora | Procédé de préparation de monocristaux de grenats de terres rares |
US3150925A (en) * | 1961-04-20 | 1964-09-29 | Richard J Gambino | Method of growing single crystals |
US3177145A (en) * | 1963-02-04 | 1965-04-06 | Ibm | Manganese copper ferrite composition containing titanium and germanium and method ofpreparation |
US3281363A (en) * | 1963-07-10 | 1966-10-25 | Bell Telephone Labor Inc | Bismuth-containing garnets and their preparation |
US3479132A (en) * | 1967-08-10 | 1969-11-18 | Ampex | Transparent magnetic spinel crystal of mixed oxide of lithium iron and vanadium |
US3638207A (en) * | 1969-11-17 | 1972-01-25 | Bell Telephone Labor Inc | Magnetic devices |
US3654162A (en) * | 1970-10-01 | 1972-04-04 | Gte Laboratories Inc | Ferrimagnetic iron garnet having large faraday effect |
US3666665A (en) * | 1970-12-14 | 1972-05-30 | Ibm | Composition of ferroelectric matter |
NL160659C (nl) * | 1972-01-08 | 1979-11-15 | Philips Nv | Magneto-optische inrichting. |
JPS5225000B2 (ja) * | 1972-08-11 | 1977-07-05 | ||
US3915661A (en) * | 1974-06-17 | 1975-10-28 | Allied Chem | Process and apparatus for growth of crystals |
-
1975
- 1975-10-07 GB GB40990/75A patent/GB1520138A/en not_active Expired
-
1976
- 1976-09-29 DE DE2643793A patent/DE2643793C2/de not_active Expired
- 1976-10-06 US US05/729,901 patent/US4077832A/en not_active Expired - Lifetime
- 1976-10-06 FR FR7630039A patent/FR2326975A1/fr active Granted
- 1976-10-07 JP JP51119902A patent/JPS5260300A/ja active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8815011B2 (en) | 2004-11-19 | 2014-08-26 | Tdk Corporation | Magnetic garnet single crystal and optical element using same as well as method of producing single crystal |
US7695562B2 (en) | 2006-01-10 | 2010-04-13 | Tdk Corporation | Magnetic garnet single crystal and method for producing the same as well as optical element using the same |
US8142676B2 (en) | 2006-02-20 | 2012-03-27 | Tdk Corporation | Magnetic garnet single crystal and optical element using the same |
US7758766B2 (en) | 2007-09-17 | 2010-07-20 | Tdk Corporation | Magnetic garnet single crystal and Faraday rotator using the same |
Also Published As
Publication number | Publication date |
---|---|
JPS5260300A (en) | 1977-05-18 |
GB1520138A (en) | 1978-08-02 |
DE2643793A1 (de) | 1977-05-12 |
DE2643793C2 (de) | 1983-01-13 |
FR2326975A1 (fr) | 1977-05-06 |
US4077832A (en) | 1978-03-07 |
FR2326975B1 (ja) | 1979-07-20 |