JPS5260079A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5260079A JPS5260079A JP50135637A JP13563775A JPS5260079A JP S5260079 A JPS5260079 A JP S5260079A JP 50135637 A JP50135637 A JP 50135637A JP 13563775 A JP13563775 A JP 13563775A JP S5260079 A JPS5260079 A JP S5260079A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- forming
- type
- formost
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
Landscapes
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50135637A JPS5260079A (en) | 1975-11-13 | 1975-11-13 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50135637A JPS5260079A (en) | 1975-11-13 | 1975-11-13 | Production of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5260079A true JPS5260079A (en) | 1977-05-18 |
| JPS613092B2 JPS613092B2 (enrdf_load_stackoverflow) | 1986-01-30 |
Family
ID=15156455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50135637A Granted JPS5260079A (en) | 1975-11-13 | 1975-11-13 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5260079A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55148466A (en) * | 1979-05-10 | 1980-11-19 | Nec Corp | Cmos semiconductor device and its manufacture |
| JPH0165151U (enrdf_load_stackoverflow) * | 1988-09-22 | 1989-04-26 |
-
1975
- 1975-11-13 JP JP50135637A patent/JPS5260079A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55148466A (en) * | 1979-05-10 | 1980-11-19 | Nec Corp | Cmos semiconductor device and its manufacture |
| JPH0165151U (enrdf_load_stackoverflow) * | 1988-09-22 | 1989-04-26 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS613092B2 (enrdf_load_stackoverflow) | 1986-01-30 |
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