JPS5240985A - Method of forming porous silicon layer - Google Patents

Method of forming porous silicon layer

Info

Publication number
JPS5240985A
JPS5240985A JP11699375A JP11699375A JPS5240985A JP S5240985 A JPS5240985 A JP S5240985A JP 11699375 A JP11699375 A JP 11699375A JP 11699375 A JP11699375 A JP 11699375A JP S5240985 A JPS5240985 A JP S5240985A
Authority
JP
Japan
Prior art keywords
silicon layer
porous silicon
forming porous
type
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11699375A
Other languages
Japanese (ja)
Inventor
Tatsuyuki Tomioka
Noboru Yoshigami
Takamichi Hattori
Kiyoharu Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11699375A priority Critical patent/JPS5240985A/en
Publication of JPS5240985A publication Critical patent/JPS5240985A/en
Pending legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To form a P+ type layer between a P type Si substrate and an N type Si epitaxial layer deposited over the substrate and opposing to the top of the epitaxial layer, then contacting them as a drive-in thence making them porous thereby forming a deep porous Si layer of less expansion in cross direction.
COPYRIGHT: (C)1977,JPO&Japio
JP11699375A 1975-09-26 1975-09-26 Method of forming porous silicon layer Pending JPS5240985A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11699375A JPS5240985A (en) 1975-09-26 1975-09-26 Method of forming porous silicon layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11699375A JPS5240985A (en) 1975-09-26 1975-09-26 Method of forming porous silicon layer

Publications (1)

Publication Number Publication Date
JPS5240985A true JPS5240985A (en) 1977-03-30

Family

ID=14700808

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11699375A Pending JPS5240985A (en) 1975-09-26 1975-09-26 Method of forming porous silicon layer

Country Status (1)

Country Link
JP (1) JPS5240985A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4879585A (en) * 1972-01-24 1973-10-25
JPS48102988A (en) * 1972-04-07 1973-12-24
JPS495282A (en) * 1972-05-01 1974-01-17

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4879585A (en) * 1972-01-24 1973-10-25
JPS48102988A (en) * 1972-04-07 1973-12-24
JPS495282A (en) * 1972-05-01 1974-01-17

Similar Documents

Publication Publication Date Title
JPS54589A (en) Burying method of insulator
JPS5267969A (en) Manufacture of semiconductor unit
JPS5249772A (en) Process for production of semiconductor device
JPS5389374A (en) Production of semiconductor device
JPS5240985A (en) Method of forming porous silicon layer
JPS51122386A (en) Manufacturing method of semiconductor device
JPS527668A (en) Method of manufacturing microchannel plates
JPS52111390A (en) Production of semi-conductor
JPS533785A (en) Thin film solar battery
JPS5366163A (en) Selective growth method of semiconductor buried layer
JPS5251872A (en) Production of semiconductor device
JPS5395570A (en) Forming method of epitaxial layer
JPS5227362A (en) Formation method of passivation film
JPS5240986A (en) Process for production of semiconductor element
JPS547879A (en) Manufacture for semiconductor device
JPS5378780A (en) Preparation for semiconductor device
JPS52141565A (en) Manufacture of semiconductor unit
JPS51123558A (en) Manufacturing method of plate semiconductor
JPS5211764A (en) Method of manufacturing semiconductor device
JPS51151081A (en) Mos type semiconductor apparatus and that manufacturing method
JPS5410683A (en) Production of smiconductor device
JPS547867A (en) Manufacture for semiconductor device
JPS5361980A (en) Production of semiconductor device
JPS52111380A (en) Porous silicon insulation layer forming
JPS5349943A (en) Impurity diffusion method