JPS5236475A - Non-volatile semiconductor memory - Google Patents

Non-volatile semiconductor memory

Info

Publication number
JPS5236475A
JPS5236475A JP50113041A JP11304175A JPS5236475A JP S5236475 A JPS5236475 A JP S5236475A JP 50113041 A JP50113041 A JP 50113041A JP 11304175 A JP11304175 A JP 11304175A JP S5236475 A JPS5236475 A JP S5236475A
Authority
JP
Japan
Prior art keywords
semiconductor memory
volatile semiconductor
pair
different sizes
reading operation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50113041A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5634106B2 (enExample
Inventor
Yasuki Rai
Terutoshi Sasami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP50113041A priority Critical patent/JPS5236475A/ja
Publication of JPS5236475A publication Critical patent/JPS5236475A/ja
Publication of JPS5634106B2 publication Critical patent/JPS5634106B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Non-Volatile Memory (AREA)
JP50113041A 1975-09-17 1975-09-17 Non-volatile semiconductor memory Granted JPS5236475A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50113041A JPS5236475A (en) 1975-09-17 1975-09-17 Non-volatile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50113041A JPS5236475A (en) 1975-09-17 1975-09-17 Non-volatile semiconductor memory

Publications (2)

Publication Number Publication Date
JPS5236475A true JPS5236475A (en) 1977-03-19
JPS5634106B2 JPS5634106B2 (enExample) 1981-08-07

Family

ID=14601975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50113041A Granted JPS5236475A (en) 1975-09-17 1975-09-17 Non-volatile semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5236475A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58203697A (ja) * 1982-05-20 1983-11-28 Toshiba Corp 半導体記憶装置
JPH0770626B2 (ja) * 1984-10-29 1995-07-31 エイ・ティ・アンド・ティ グローバル インフォメーション ソルーションズ インターナショナル インコーポレイテッド 不揮発性メモリ−・セル
US5739568A (en) * 1994-11-28 1998-04-14 Motorola, Inc. Non-volatile memory having a cell applying to multi-bit data by double layered floating gate architecture and programming method for the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58203697A (ja) * 1982-05-20 1983-11-28 Toshiba Corp 半導体記憶装置
JPH0770626B2 (ja) * 1984-10-29 1995-07-31 エイ・ティ・アンド・ティ グローバル インフォメーション ソルーションズ インターナショナル インコーポレイテッド 不揮発性メモリ−・セル
US5739568A (en) * 1994-11-28 1998-04-14 Motorola, Inc. Non-volatile memory having a cell applying to multi-bit data by double layered floating gate architecture and programming method for the same

Also Published As

Publication number Publication date
JPS5634106B2 (enExample) 1981-08-07

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