JPS5236475A - Non-volatile semiconductor memory - Google Patents
Non-volatile semiconductor memoryInfo
- Publication number
- JPS5236475A JPS5236475A JP50113041A JP11304175A JPS5236475A JP S5236475 A JPS5236475 A JP S5236475A JP 50113041 A JP50113041 A JP 50113041A JP 11304175 A JP11304175 A JP 11304175A JP S5236475 A JPS5236475 A JP S5236475A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor memory
- volatile semiconductor
- pair
- different sizes
- reading operation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
Landscapes
- Non-Volatile Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50113041A JPS5236475A (en) | 1975-09-17 | 1975-09-17 | Non-volatile semiconductor memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50113041A JPS5236475A (en) | 1975-09-17 | 1975-09-17 | Non-volatile semiconductor memory |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5236475A true JPS5236475A (en) | 1977-03-19 |
JPS5634106B2 JPS5634106B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1981-08-07 |
Family
ID=14601975
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50113041A Granted JPS5236475A (en) | 1975-09-17 | 1975-09-17 | Non-volatile semiconductor memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5236475A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58203697A (ja) * | 1982-05-20 | 1983-11-28 | Toshiba Corp | 半導体記憶装置 |
JPH0770626B2 (ja) * | 1984-10-29 | 1995-07-31 | エイ・ティ・アンド・ティ グローバル インフォメーション ソルーションズ インターナショナル インコーポレイテッド | 不揮発性メモリ−・セル |
US5739568A (en) * | 1994-11-28 | 1998-04-14 | Motorola, Inc. | Non-volatile memory having a cell applying to multi-bit data by double layered floating gate architecture and programming method for the same |
-
1975
- 1975-09-17 JP JP50113041A patent/JPS5236475A/ja active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58203697A (ja) * | 1982-05-20 | 1983-11-28 | Toshiba Corp | 半導体記憶装置 |
JPH0770626B2 (ja) * | 1984-10-29 | 1995-07-31 | エイ・ティ・アンド・ティ グローバル インフォメーション ソルーションズ インターナショナル インコーポレイテッド | 不揮発性メモリ−・セル |
US5739568A (en) * | 1994-11-28 | 1998-04-14 | Motorola, Inc. | Non-volatile memory having a cell applying to multi-bit data by double layered floating gate architecture and programming method for the same |
Also Published As
Publication number | Publication date |
---|---|
JPS5634106B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1981-08-07 |
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